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174 条记录 (耗时 0.032 秒)

    Spin valve structure design with laminated free layer
    1.
    发明授权
    Spin valve structure design with laminated free layer 失效
    自旋阀结构设计采用层压自由层

    公开(公告)号：US06392853B1

    公开(公告)日：2002-05-21

    申请号：US09489973

    申请日：2000-01-24

    申请人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Youfeng Zheng ,  Ru-Ying Tong ,  Kochan Ju

    发明人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Youfeng Zheng ,  Ru-Ying Tong ,  Kochan Ju

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/26

    摘要： The giant magnetoresistance (GMR) effect includes a contribution that is due to anisotropic magnetoresistance (AMR). Unfortunately the AMR effect tends to degrade the peak-to-peak signal asymmetry. Additionally, a high AMR/GMR ratio causes a larger signal asymmetry variation. It is therefor desirable to reduce both the AMR contribution as well as the AMR/GMR ratio. This has been achieved by modifying the free layer through the insertion of an extra layer of a highly resistive or insulating material at approximately mid thickness level. This layer is from 3 to 15 Angstroms thick and serves to reduce the Anisotropic Magneto-resistance contribution to the total magneto-resistance of the device. This reduces the GMR contribution only slightly but cuts the AMR/GMR ratio in half, thereby improving cross-track asymmetry and signal linearity.

    摘要翻译： 巨磁电阻（GMR）效应包括归因于各向异性磁阻（AMR）。 不幸的是，AMR效应趋于降低峰 - 峰信号不对称性。 另外，高AMR / GMR比率导致更大的信号不对称变化。 因此，减少AMR贡献以及AMR / GMR比值是有希望的。 这已经通过在大约中等厚度水平上插入高电阻或绝缘材料的额外层来修饰自由层来实现。 该层厚度为3至15埃，用于降低各向异性磁阻对器件的总磁阻的贡献。 这仅略微降低了GMR贡献，但将AMR / GMR比率降低了一半，从而提高了交叉磁道不对称性和信号线性度。

    Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it
    2.
    发明授权
    Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it 有权
    合成的反并联自旋阀，具有改进的鲁棒性，以及制造方法

    公开(公告)号：US06620530B1

    公开(公告)日：2003-09-16

    申请号：US09769813

    申请日：2001-01-26

    申请人： Min Li ,  Cheng T. Horng ,  Ru Ying Tong ,  Simon H. Liao ,  Kochan Ju

    发明人： Min Li ,  Cheng T. Horng ,  Ru Ying Tong ,  Simon H. Liao ,  Kochan Ju

    IPC分类号： G11B560

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3163 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/302 ,  Y10S428/90 ,  Y10T428/11 ,  Y10T428/1121

    摘要： A spin valve structure and a method for manufacturing it are described. The spin valve uses a modified pinned layer that consists of two cobalt iron layers separated by a layer of either ruthenium, iridium, or rhodium. A key feature of the invention is that this spacer layer is significantly thinner (typically 3-4 Angstroms) than similar layers in prior art structures. Normally, when such thin spacer layers are used, annealing fields in excess of 20,000 Oersted are needed to cause the two cobalt iron layers to become antiparallel. The present invention, however, teaches that much lower annealing fields (spanning a limited range) may be used with equal effect. The result is that a very high internal pinning field is created giving devices of this type greater pinned layer stability and reduced pinning reversal. These devices also exhibits a minimum amount of open looping in their hysteresis curves.

    摘要翻译： 描述了一种自旋阀结构及其制造方法。 自旋阀使用由两层钴铁层组成的改性钉扎层，其由钌，铱或铑层分开。 本发明的一个关键特征是该间隔层比现有技术结构中相似的层明显更薄（通常为3-4埃）。 通常，当使用这种薄的间隔层时，需要超过20,000奥斯特的退火场，以使两个钴铁层变得反平行。 然而，本发明教导了可以使用相同效果的低得多的退火场（跨越有限范围）。 结果是产生非常高的内部钉扎场，使得这种类型的装置更大的被钉扎层稳定性并减少钉扎反转。 这些装置在其滞后曲线中也表现出最小量的开环。

    Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient
    4.
    发明授权
    Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient 有权
    具有增强磁阻（MR）系数的各向异性磁阻（MR）传感器元件

    公开(公告)号：US06590751B1

    公开(公告)日：2003-07-08

    申请号：US09408700

    申请日：1999-09-30

    申请人： Cheng T. Horng ,  Rongfu Xiao ,  Ru-Ying Tong ,  Jei-Wei Chang ,  Kochan Ju ,  Simon H. Liao

    发明人： Cheng T. Horng ,  Rongfu Xiao ,  Ru-Ying Tong ,  Jei-Wei Chang ,  Kochan Ju ,  Simon H. Liao

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3903 ,  G11B5/3954

    摘要： A method for forming an anisotropic magnetoresistive (MR) sensor element, and the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a magnetoresistive (MR) layer. The method contemplates the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. The nickel oxide material layer provides the anisotropic magnetoresistive (MR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.

    摘要翻译： 一种用于形成各向异性磁阻（MR）传感器元件的方法和根据该方法形成的各向异性磁阻（MR）传感器元件。 根据该方法，首先提供基板。 然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。 然后在种子层上形成氧化镍材料层。 最后，在氧化镍材料层上形成磁阻（MR）层。 该方法考虑了根据该方法形成的各向异性磁阻（MR）传感器元件。 氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的各向异性磁阻（MR）传感器元件。

    Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
    5.
    发明授权
    Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient 失效
    具有增强磁阻（MR）系数的巨磁阻（GMR）传感器元件

    公开(公告)号：US06292336B1

    公开(公告)日：2001-09-18

    申请号：US09408703

    申请日：1999-09-30

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Kochan Ju ,  Mao-Min Chen ,  Jei-Wei Chang ,  Simon H. Liao

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Kochan Ju ,  Mao-Min Chen ,  Jei-Wei Chang ,  Simon H. Liao

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268

    摘要： A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method. The nickel oxide material layer provides the giant magnetoresistive (GMR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.

    摘要翻译： 一种用于形成巨磁阻（GMR）传感器元件的方法，以及根据该方法形成的巨磁阻（GMR）传感元件。 根据该方法，首先提供基板。 然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。 然后在种子层上形成氧化镍材料层。 最后，然后在氧化镍材料层上形成与被钉扎的铁磁性层分离的自由铁磁层，然后由非磁性导体间隔层形成，其中钉扎的铁磁层又形成有钉扎材料层。 该方法考虑了根据该方法形成的巨磁阻（GMR）传感器元件。 氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的巨磁阻（GMR）传感器元件。