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173 条记录 (耗时 0.038 秒)

    Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
    1.
    发明授权
    Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient 失效
    具有增强磁阻（MR）系数的巨磁阻（GMR）传感器元件

    公开(公告)号：US06292336B1

    公开(公告)日：2001-09-18

    申请号：US09408703

    申请日：1999-09-30

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Kochan Ju ,  Mao-Min Chen ,  Jei-Wei Chang ,  Simon H. Liao

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Kochan Ju ,  Mao-Min Chen ,  Jei-Wei Chang ,  Simon H. Liao

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268

    摘要： A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method. The nickel oxide material layer provides the giant magnetoresistive (GMR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.

    摘要翻译： 一种用于形成巨磁阻（GMR）传感器元件的方法，以及根据该方法形成的巨磁阻（GMR）传感元件。 根据该方法，首先提供基板。 然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。 然后在种子层上形成氧化镍材料层。 最后，然后在氧化镍材料层上形成与被钉扎的铁磁性层分离的自由铁磁层，然后由非磁性导体间隔层形成，其中钉扎的铁磁层又形成有钉扎材料层。 该方法考虑了根据该方法形成的巨磁阻（GMR）传感器元件。 氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的巨磁阻（GMR）传感器元件。

    Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient
    2.
    发明授权
    Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient 有权
    具有增强磁阻（MR）系数的各向异性磁阻（MR）传感器元件

    公开(公告)号：US06590751B1

    公开(公告)日：2003-07-08

    申请号：US09408700

    申请日：1999-09-30

    申请人： Cheng T. Horng ,  Rongfu Xiao ,  Ru-Ying Tong ,  Jei-Wei Chang ,  Kochan Ju ,  Simon H. Liao

    发明人： Cheng T. Horng ,  Rongfu Xiao ,  Ru-Ying Tong ,  Jei-Wei Chang ,  Kochan Ju ,  Simon H. Liao

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3903 ,  G11B5/3954

    摘要： A method for forming an anisotropic magnetoresistive (MR) sensor element, and the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a magnetoresistive (MR) layer. The method contemplates the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. The nickel oxide material layer provides the anisotropic magnetoresistive (MR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.

    摘要翻译： 一种用于形成各向异性磁阻（MR）传感器元件的方法和根据该方法形成的各向异性磁阻（MR）传感器元件。 根据该方法，首先提供基板。 然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。 然后在种子层上形成氧化镍材料层。 最后，在氧化镍材料层上形成磁阻（MR）层。 该方法考虑了根据该方法形成的各向异性磁阻（MR）传感器元件。 氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的各向异性磁阻（MR）传感器元件。

    Spin valve structure design with laminated free layer
    5.
    发明授权
    Spin valve structure design with laminated free layer 失效
    自旋阀结构设计采用层压自由层

    公开(公告)号：US06392853B1

    公开(公告)日：2002-05-21

    申请号：US09489973

    申请日：2000-01-24

    申请人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Youfeng Zheng ,  Ru-Ying Tong ,  Kochan Ju

    发明人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Youfeng Zheng ,  Ru-Ying Tong ,  Kochan Ju

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/26

    摘要： The giant magnetoresistance (GMR) effect includes a contribution that is due to anisotropic magnetoresistance (AMR). Unfortunately the AMR effect tends to degrade the peak-to-peak signal asymmetry. Additionally, a high AMR/GMR ratio causes a larger signal asymmetry variation. It is therefor desirable to reduce both the AMR contribution as well as the AMR/GMR ratio. This has been achieved by modifying the free layer through the insertion of an extra layer of a highly resistive or insulating material at approximately mid thickness level. This layer is from 3 to 15 Angstroms thick and serves to reduce the Anisotropic Magneto-resistance contribution to the total magneto-resistance of the device. This reduces the GMR contribution only slightly but cuts the AMR/GMR ratio in half, thereby improving cross-track asymmetry and signal linearity.

    摘要翻译： 巨磁电阻（GMR）效应包括归因于各向异性磁阻（AMR）。 不幸的是，AMR效应趋于降低峰 - 峰信号不对称性。 另外，高AMR / GMR比率导致更大的信号不对称变化。 因此，减少AMR贡献以及AMR / GMR比值是有希望的。 这已经通过在大约中等厚度水平上插入高电阻或绝缘材料的额外层来修饰自由层来实现。 该层厚度为3至15埃，用于降低各向异性磁阻对器件的总磁阻的贡献。 这仅略微降低了GMR贡献，但将AMR / GMR比率降低了一半，从而提高了交叉磁道不对称性和信号线性度。

    Structure and method to fabricate high performance MTJ devices for MRAM applications
    7.
    发明授权
    Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
    制造用于MRAM应用的高性能MTJ器件的结构和方法

    公开(公告)号：US07211447B2

    公开(公告)日：2007-05-01

    申请号：US11080868

    申请日：2005-03-15

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12

    摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.

    摘要翻译： 公开了一种在MRAM阵列中形成高性能MTJ的方法。 溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。 一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。 所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。

    Structure and method to fabricate high performance MTJ devices for MRAM applications
    8.
    发明授权
    Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
    制造用于MRAM应用的高性能MTJ器件的结构和方法

    公开(公告)号：US07208807B2

    公开(公告)日：2007-04-24

    申请号：US11080860

    申请日：2005-03-15

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  H01L43/12

    摘要： A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2. The MTJ configuraton is extendable to a 0.2×0.4 micron MTJ bit size.

    摘要翻译： 公开了一种MRAM阵列中的高性能MTJ，其中底部导体具有无定形Ta覆盖层。 关键特征是由在Ta表面上形成的氧构成的表面活性剂层。 得到的平滑且平坦的Ta覆盖层促进MTJ层中平滑且平坦的表面，随后在表面活性剂层上形成。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。 MTJ配置可扩展到0.2x0.4微米的MTJ位大小。