公开(公告)号：US20120282732A1

公开(公告)日：2012-11-08

申请号：US13519249

申请日：2011-01-18

申请人： Min Sung Jeon ,  Won Jae Lee ,  Eun Chel Cho ,  Joon Sung Lee

发明人： Min Sung Jeon ,  Won Jae Lee ,  Eun Chel Cho ,  Joon Sung Lee

IPC分类号： H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

摘要： The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.

摘要翻译： 本发明涉及背电极型太阳能电池的制造方法。 本文公开的背面电极型太阳能电池的制造方法包括：背面电极型太阳能电池的制造方法，其包括：准备n型结晶硅基板; 在所述基板的前表面，背面和侧面上形成热扩散控制膜; 通过将p型杂质离子注入到衬底的背面上来形成p型杂质区; 图案化热扩散控制膜，使得衬底的背面被选择性地暴露; 以及通过进行热扩散处理在所述基板的背面的露出区域和所述基板的前表面处形成低浓度前场层（n），形成高浓度背景层（n +），以及 通过激活p型杂质区域形成p +发射极区域。

公开(公告)号：US08461011B2

公开(公告)日：2013-06-11

申请号：US13519249

申请日：2011-01-18

申请人： Min Sung Jeon ,  Won Jae Lee ,  Eun Chel Cho ,  Joon Sung Lee

发明人： Min Sung Jeon ,  Won Jae Lee ,  Eun Chel Cho ,  Joon Sung Lee

IPC分类号： H01L21/20

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

摘要： The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.

摘要翻译： 本发明涉及背电极型太阳能电池的制造方法。 本文公开的背面电极型太阳能电池的制造方法包括：背面电极型太阳能电池的制造方法，其包括：准备n型结晶硅基板; 在所述基板的前表面，背面和侧面上形成热扩散控制膜; 通过将p型杂质离子注入到衬底的背面上来形成p型杂质区; 图案化热扩散控制膜，使得衬底的背面被选择性地暴露; 以及通过进行热扩散处理在所述基板的背面的露出区域和所述基板的前表面处形成低浓度前场层（n），形成高浓度背景层（n +），以及 通过激活p型杂质区域形成p +发射极区域。

公开(公告)号：US08871557B2

公开(公告)日：2014-10-28

申请号：US13601948

申请日：2012-08-31

申请人： Joon Sung Lee ,  Yong Sun Yoon

发明人： Joon Sung Lee ,  Yong Sun Yoon

IPC分类号： H01L21/00 ,  H01L31/107

CPC分类号： H01L31/107 ,  H01L27/1446 ,  H01L27/14643 ,  H01L27/14689

摘要： Provided are a photomultiplier and a manufacturing method thereof. The manufacturing method thereof may include forming a mask layer on an active region of a substrate doped with a first conductive type, ion implanting a second conductive type impurity opposite to the first conductive type into the substrate to form a first doped region in the active region under the mask layer and an non-active region exposed from the mask layer, forming a device isolation layer on the non-active region, removing the mask layer, and ion implanting the second conductive type impurity having a concentration higher than that of the first doped region into an upper portion of the first doped region in the active region to form a second doped region shallower than the first doped region.

摘要翻译： 提供一种光电倍增管及其制造方法。 其制造方法可以包括在掺杂有第一导电类型的衬底的有源区上形成掩模层，将与第一导电类型相反的第二导电类型杂质注入到衬底中以在有源区中形成第一掺杂区 在掩模层下面和从掩模层露出的非有源区，在非有源区上形成器件隔离层，去除掩模层，以及离子注入浓度高于第一导电型杂质的第二导电型杂质 掺杂区域进入有源区域中的第一掺杂区域的上部，以形成比第一掺杂区域浅的第二掺杂区域。

公开(公告)号：US08860163B2

公开(公告)日：2014-10-14

申请号：US13324973

申请日：2011-12-13

申请人： Joon Sung Lee ,  Yong Sun Yoon

发明人： Joon Sung Lee ,  Yong Sun Yoon

IPC分类号： H01L29/72 ,  G01T1/24 ,  G01J1/02 ,  H01L31/0232 ,  G01T1/20 ,  G01J1/04 ,  H01L27/146

CPC分类号： H01L31/02327 ,  G01J1/0214 ,  G01J1/0407 ,  G01T1/2002 ,  G01T1/248 ,  H01L27/14627

摘要： Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.

摘要翻译： 公开了一种形成在具有多个微小区的半导体光电倍增管的上侧的光学结构。 光学结构包括：第一电介质体，形成在各个微电池的光接收区域之间的死区的上侧，并且具有下侧宽于上侧的横截面结构; 以及形成在每个微电池的光接收区域的上侧的第二电介质体，并且具有下侧比上侧窄的截面结构，并且第二电介质的折射率高于 的第一绝缘体。

公开(公告)号：US08664691B2

公开(公告)日：2014-03-04

申请号：US13330501

申请日：2011-12-19

申请人： Joon Sung Lee

发明人： Joon Sung Lee

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L31/103 ,  H01L27/1446 ,  H01L27/1463

摘要： A silicon photomultiplier maintains the photon detection efficiency high while increasing a dynamic range, by reducing the degradation of an effective fill factor that follows the increase of cell number density intended for a dynamic range enhancement.

摘要翻译： 硅光电倍增管通过减少随着用于动态范围增强的细胞数密度增加而有效填充因子的降低而保持光子检测效率高，同时增加动态范围。

公开(公告)号：US08482092B2

公开(公告)日：2013-07-09

申请号：US13289256

申请日：2011-11-04

申请人： Joon Sung Lee ,  Yong Sun Yoon

发明人： Joon Sung Lee ,  Yong Sun Yoon

IPC分类号： H01L31/07 ,  H01L29/00 ,  H01L21/00

CPC分类号： H01L31/103 ,  H01L27/1461 ,  H01L27/14683 ,  H01L31/107

摘要： Provided are a silicon photomultiplier and method for fabricating silicon photomultiplier. The silicon photomultiplier includes a first conductive type semiconductor layer; a first conductive type buried layer disposed in a lower portion of the first conductive type semiconductor layer, and having a higher impurity concentration than the first conductive type semiconductor layer; quench resistors spaced from each other and disposed on the first conductive type semiconductor layer; a transparent insulator formed on the first conductive type semiconductor layer, and exposing the quench resistors; second conductive type doped layers disposed under the quench resistors to contact the first conductive type semiconductor layer; and a transparent electrode commonly connected to the quench resistors electrically.

摘要翻译： 提供了硅光电倍增管和制造硅光电倍增管的方法。 硅光电倍增管包括第一导电型半导体层; 第一导电型掩埋层，设置在第一导电类型半导体层的下部，并且具有比第一导电类型半导体层更高的杂质浓度; 淬火电阻彼此间隔开并设置在第一导电类型半导体层上; 形成在所述第一导电类型半导体层上的透明绝缘体，并暴露所述骤冷电阻器; 设置在所述骤冷电阻器下方的第二导电型掺杂层以接触所述第一导电类型半导体层; 以及通常连接到骤冷电阻器的透明电极。

公开(公告)号：US5798291A

公开(公告)日：1998-08-25

申请号：US831343

申请日：1997-04-01

申请人： Joon Sung Lee ,  Won Young Jung

发明人： Joon Sung Lee ,  Won Young Jung

IPC分类号： H01L21/336 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78

CPC分类号： H01L29/66636 ,  H01L29/0847 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/7833

摘要： This invention relates to a semiconductor device and method for fabricating the semiconductor device, for forming a source and drain structure having no side diffusion. The semiconductor device includes a silicon substrate, a gate formed on the silicon substrate with a gate insulation film in between, and a source and drain formed of conductive material layers buried in the substrate to a designated depth at opposite sides of the gate, thereby providing a source with no side diffusion, preventing reduction of channel length, and improving element integration.

摘要翻译： 本发明涉及一种用于制造半导体器件的半导体器件和方法，用于形成没有侧向扩散的源极和漏极结构。 半导体器件包括硅衬底，形成在硅衬底上的栅极，其间具有栅极绝缘膜，以及由埋在衬底中的导电材料层形成的源极和漏极到栅极的相对侧处的指定深度，从而提供 没有侧面扩散的源，防止通道长度的减少，并且改善元件集成。