Abstract:
An optical fiber Mach-Zehnder interferometer optical filter is disclosed. The filter includes a stabilization light source for varying a first wavelength of a light signal for stabilizing a Mach-Zehnder interferometer, first and second optical fiber couplers for receiving an optical signal from the stabilization light source and an optical signal of a second wavelength different from a first wavelength inputted from an input port and dividing into two parts having the same intensity for thereby forming a Mach-Zehnder interferometer, a polarization controller connected with one side of the first optical fiber coupler for controlling a polarization of the interfered light of the interferometer, first and second wavelength division multiplex optical couplers connected with the second optical fiber coupler for separately outputting a first wavelength optical signal and a second wavelength optical signal, an optical fiber phase modulator connected with the other side of the first optical fiber coupler for varying the length of the optical fiber in accordance with a fed-back phase difference, and a stabilization circuit for receiving two optical signals of the first wavelength from the first and second wavelength division multiplex optical couplers and feeding back the phase difference to the optical fiber phase modulator for thereby implementing a constant optical path difference of the interferometer.
Abstract:
The wavelength tunable mode-locking optical fiber laser comprises non-linear amplifying loop mirror part having a light pumping lase diode, a gain medium doped optical fiber having the gain medium for oscillating the rambling light wave sequentially, a dispersion shifted optical fiber, and first polarization controller for making the continuous oscillation light wave to be maximized by adjusting the polarization of said propagating light. All elements of the non-linear amplifying loop mirror part are combined to each other in loop type on the above clock direction., and linear mirror part having second polarization controller for adjusting the light wave oscillated by the non-linear amplifying loop mirror part to be mode-locked, Faraday rotation mirror for rotating the direction of polarization with degree, an acousto-optic tunable filter for changing the wavelength of the propagating light wave and for passing only the light wave with the defined linewidth, an optical isolator, and the 90:10 optical fiber directional coupler.
Abstract:
The present invention discloses an optical fiber laser and a method of harmonic mode locking utilizing the optical fiber laser, which is capable of locking a harmonic frequency occurred by inserting an optical modulator between a Faraday rotator mirror and a non-linear amplifying loop mirror to coincide the frequency component of the optical modulator with the frequency component of the longitudinal mode of the laser. In order to achieve the object of the present invention, it comprises an optical fiber laser which comprises a non-linear amplifying loop mirror, a linear mirror and an optical fiber directional coupler or fiber coupler.
Abstract:
The present invention provides a multi-wavelength channel transmission-type optical filter that is capable of more narrowing the bandwidth of transmission wavelength in a transmission type optical filter using Mach-Zehnder interferometer. The multi-wavelength channel transmission-type optical filter including a first optical fiber coupler for dividing a broadband light source into two lights, an optical fiber length and optical fiber length controlling unit for controlling the gap of transmission wavelength in which each receives as inputs the above lights divided by the first optical fiber coupler, a second optical fiber coupler for outputting each of the above lights, which are passed through the optical fiber length controlling unit and the optical fiber length, and an optical isolator for narrowing the width of transmission wavelength by connecting the two outputs of the second optical fiber coupler, thereby improving a wavelength selecting characteristics.
Abstract:
An improved multi-wavelength channel transmission filter, by which it is possible to selectively and simultaneously separate multiple wavelength channel signals without any optical time delays among, different wavelength channels, includes one optical circulator with four terminal ports, one polarization beam splitter (PBS), one half-wave plate, and a number of Brag, gratings formed in an optical waveguide for reflection of multi-wavelength channels by combining the wavelength characteristic of each Bragg grating which is determined in accordance with the grating structure.
Abstract:
The formation of self-assembled GaAs quantum dots on (100) GaAs via chemical beam epitaxy (CBE) technique using triethylgallium (TEGa) and arsine (AsH.sub.3) is disclosed. GaAs quantum dots are easy to grow from Ga-droplets which are successively supplied with arsine with neither pattern definition nor pre-treatment steps prior to the growth. The density and the size of Ga-droplets are found to be sensitive to the growth conditions, such as the growth temperature, the beam equivalent pressure of TEGa, and the amount of TEGa supplied. This invention suggests that, unlike Stranski-Krastanow growth, the Ga-droplet-induced CBE technique can be a useful method for the fabrication of quantum dot structure by simple change of gas supply mode, even in lattice-matched system.
Abstract:
A method for forming a highly dense quantum wire, the method comprising the steps of: depositing a dielectric mask having dielectric patterns on the top surface of a semiconductor (100) substrate; forming the dielectric patterns in parallel to a (011) orientation on the semiconductor substrate; exposing a (111)B side and a(111)B side by chemical etching a selected region between the patterns so that the semiconductor substrate has a dove-tail shape; forming a buffer layer on the dove-tail semiconductor substrate; forming the first barrier layer on the buffer layer; forming a well layer on the first barrier layer; and forming the second barrier layer on the well layer.
Abstract:
An optical fiber Raman laser includes an optical fiber which is a nonlinear optical medium, for implementing a nonlinear Stokes frequency shift; a wavelength-division multiplexing optical fiber coupler means, coupled to said optical fiber in parallel, for separating each Stokes frequency shifted wavelengths and pump wavelength, for internally resonating the Stokes frequency shited light wavelengths and for output-coupling said laser output light which is a second order Stokes frequency shifted wavelength; a first fiber Bragg grating means connected to said wavelength division multiplexing (WDM) optical fiber coupler means in serial, for transmitting light of the pump source and for selecting output wave of the Raman laser; and a second fiber Bragg grating means connected to said wavelength division multiplexing (WDM) optical fiber coupler means, which has maximum reflectivity on the wavelength of the pump source, for full-reflecting and re-inputting the light of the pump source to said optical fiber.
Abstract:
A multistage optical packet switching apparatus with self electro-optic-effect device is disclosed. The apparatus is formed with multistage structure using a plurality of symmetrical self electro-optic-effect devices, self-routing being performed by the control for a header part of optical packets after self-duplication and amplification for the input optical signal. The optical packet switching apparatus using a plurality of symmetrical self electro-optic-effect devices includes a front stage having first and second self electro-optic-effect devices interconnected and a back stage having third and fourth self electro-optic-effect devices interconnected, the 1.quadrature. multistage structure comprising the unit switching modules interconnected each comprising the front and the back stages, the self-duplication and amplification being performed in the front stage and the switching being performed in the back stage. The use of the apparatus is an optical exchange.
Abstract:
A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, forming a V-grooved patterned structures and a reverse quadrilateral pyramid patterned structures by thermal etching to evaporate portions of the quantum well layer that are not protected by line-shaped mask regions and square-shaped mask regions of the masking layer, forming a quantum wires and a quantum dots by alternatively growing a barrier layer and an active layer on a V-grooved patterned substrate and a reverse quadrilateral pyramid patterned substrate.