Liquid crystal display having minimized bezel area
    1.
    发明授权
    Liquid crystal display having minimized bezel area 有权
    具有最小化面板区域的液晶显示器

    公开(公告)号:US09116400B2

    公开(公告)日:2015-08-25

    申请号:US13450274

    申请日:2012-04-18

    摘要: A liquid crystal display includes a first substrate including pixels arranged in m columns by n rows, n data lines disposed, m gate lines arranged substantially parallel to the data lines, n data distribution lines arranged to cross the m gate lines and electrically connected to the data lines, respectively, source driving chips disposed on a first portion of the first substrate, and a gate driver disposed on a second portion of the first substrate. Each of the data distribution lines is connected to a subset of the pixels arranged in a corresponding row, and each of the gate lines is connected to a subgroup of the pixels arranged in a corresponding column. The source driving chips apply data signals to the pixels through the first data lines and the data distribution lines, and the gate driver applies gate signals to the pixels through the gate lines.

    摘要翻译: 一种液晶显示器包括:第一基板,包括以m列排列成n行的像素,n条数据线,m行大致平行于数据线布置的栅极线,n条数据配线,与n条栅极线交叉并与 数据线,分别设置在第一基板的第一部分上的源极驱动芯片和设置在第一基板的第二部分上的栅极驱动器。 每个数据分配线连接到布置在相应行中的像素的子集,并且每条栅极线连接到排列在相应列中的像素的子组。 源极驱动芯片通过第一数据线和数据分配线将数据信号施加到像素,并且栅极驱动器通过栅极线将栅极信号施加到像素。

    METHOD OF MANUFACTURING A SOLAR CELL
    5.
    发明申请
    METHOD OF MANUFACTURING A SOLAR CELL 审中-公开
    制造太阳能电池的方法

    公开(公告)号:US20120295391A1

    公开(公告)日:2012-11-22

    申请号:US13309870

    申请日:2011-12-02

    IPC分类号: H01L31/18

    摘要: A method of manufacturing a solar cell includes preparing a base substrate having a first conductive type; diffusing an impurity having a second conductive type (opposite the first conductive type) into the base substrate to form an emitter layer having a first impurity concentration on the base substrate and a by-product layer on the emitter layer; irradiating a laser beam onto the emitter layer corresponding to a first region of the base substrate to form a front contact portion having a second impurity concentration higher than the first impurity concentration; irradiating the laser beam onto the by-product layer to remove the by-product layer corresponding to the first region; removing the by-product layer from an area outside of the first region; forming an anti-reflection layer on the base substrate; forming a front electrode on the anti-reflection layer corresponding to the first region; and forming a back electrode on the base substrate.

    摘要翻译: 一种制造太阳能电池的方法包括制备具有第一导电类型的基底基板; 将具有第二导电类型(与第一导电类型相反)的杂质扩散到基底衬底中,以在基底衬底上形成具有第一杂质浓度的发射极层和发射极层上的副产物层; 将激光束照射到与基底基板的第一区域对应的发射极层上,以形成具有高于第一杂质浓度的第二杂质浓度的前接触部分; 将激光束照射到副产物层上以去除对应于第一区域的副产物层; 从第一区域外的区域除去副产物层; 在基底基板上形成防反射层; 在对应于第一区域的防反射层上形成前电极; 以及在基底基板上形成背电极。

    Method of manufacturing photoelectric device
    6.
    发明授权
    Method of manufacturing photoelectric device 有权
    制造光电器件的方法

    公开(公告)号:US08664015B2

    公开(公告)日:2014-03-04

    申请号:US13568462

    申请日:2012-08-07

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.

    摘要翻译: 一种制造太阳能电池的方法,包括提供具有第一导电类型的半导体衬底; 执行包括形成具有不同于第一导电类型的第二导电类型的第一掺杂材料层的第一沉积工艺; 执行包括在其上加热具有第一掺杂材料层的衬底的驱入工艺; 在执行所述驱入工艺之后执行第二沉积工艺,并且包括在所述第一掺杂材料层上形成第二掺杂材料层,其中所述第二掺杂材料层具有第二导电类型; 用激光局部加热基板,第一掺杂材料层和第二掺杂材料层的部分,以在基板的第一表面上形成接触层; 以及在所述接触层上形成第一电极,在所述基板的与所述第一表面相对的第二表面上形成第二电极。

    Solar cell and method of fabricating the same
    7.
    发明授权
    Solar cell and method of fabricating the same 有权
    太阳能电池及其制造方法

    公开(公告)号:US08647914B2

    公开(公告)日:2014-02-11

    申请号:US13242787

    申请日:2011-09-23

    IPC分类号: H01L31/18 H01L31/0216

    摘要: A method of fabricating a solar cell includes forming an emitter layer of a second conductive type on a front surface and a back surface of a substrate of a first conductive type opposite to the second conductive type, forming an anti-reflection layer on the front surface of the substrate, partially removing the anti-reflection layer and the emitter layer to form an isolation groove dividing the emitter layer into a plurality of regions, removing a portion of the emitter layer formed on the back surface of the substrate, and forming a passivation layer covering the isolation groove and the back surface of the substrate.

    摘要翻译: 一种制造太阳能电池的方法包括在与第二导电类型相反的第一导电类型的基板的前表面和后表面上形成第二导电类型的发射极层,在前表面上形成防反射层 部分地去除抗反射层和发射极层,以形成将发射极层分成多个区域的隔离槽,去除形成在衬底背面上的发射极层的一部分,并形成钝化层 覆盖隔离槽和衬底的背面。

    Thin film transistor array panel
    9.
    发明授权
    Thin film transistor array panel 有权
    薄膜晶体管阵列面板

    公开(公告)号:US09136283B2

    公开(公告)日:2015-09-15

    申请号:US13616165

    申请日:2012-09-14

    IPC分类号: H01L29/04 H01L27/12

    CPC分类号: H01L27/124

    摘要: A thin film transistor array panel includes: a data line which extends in a column direction and transfers a data voltage; a first pixel electrode and a second pixel electrode connected to the data line and adjacent in a row direction; a first thin film transistor connected to the first pixel electrode and the data line, and including a first source electrode and a first drain electrode; and a second thin film transistor connected to the second pixel electrode and the data line, and including a second source electrode and a second drain electrode. The first pixel electrode is at the right of the data line, the second pixel electrode is at the left of the data line, and relative positions of the first source electrode and the first drain electrode are the same as relative positions of the second source electrode and the second drain electrode.

    摘要翻译: 薄膜晶体管阵列面板包括:沿列方向延伸并传送数据电压的数据线; 连接到数据线并且在行方向上相邻的第一像素电极和第二像素电极; 连接到第一像素电极和数据线的第一薄膜晶体管,并且包括第一源极和第一漏极; 以及连接到第二像素电极和数据线的第二薄膜晶体管,并且包括第二源电极和第二漏电极。 第一像素电极位于数据线的右侧,第二像素电极位于数据线的左侧,第一源电极和第一漏电极的相对位置与第二源极的相对位置相同 和第二漏电极。

    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    光伏器件及其制造方法

    公开(公告)号:US20130125971A1

    公开(公告)日:2013-05-23

    申请号:US13587872

    申请日:2012-08-16

    IPC分类号: H01L31/0236 H01L31/18

    摘要: Method of manufacturing a photovoltaic device and a photovoltaic device manufactured by using the method. The method includes forming a first conductive-type semiconductor layer using a first impurity on a semiconductor substrate, performing doping on a region of the first conductive-type semiconductor layer using a laser such that the region of the first conductive-type semiconductor layer has a higher concentration of the first impurity than a remaining portion of the first conductive-type semiconductor layer, performing edge isolation to form a groove portion at an edge portion of a rear surface of the semiconductor substrate, forming an antireflection layer on a front surface of the semiconductor substrate, forming a first metal electrode on the front surface of the semiconductor substrate, and forming a second metal electrode and a second conductive-type semiconductor layer including a second impurity that is different from the first impurity, on the rear surface of the semiconductor substrate.

    摘要翻译: 使用该方法制造光伏器件和光伏器件的方法。 该方法包括在半导体衬底上形成使用第一杂质的第一导电型半导体层,使用激光在第一导电型半导体层的区域上进行掺杂,使得第一导电型半导体层的区域具有 第一杂质的浓度比第一导电型半导体层的剩余部分浓度高,进行边缘隔离以在半导体衬底的后表面的边缘部分形成沟槽部分,在半导体衬底的表面上形成抗反射层 半导体衬底,在半导体衬底的前表面上形成第一金属电极,并且在半导体衬底的后表面上形成第二金属电极和包括与第一杂质不同的第二杂质的第二导电型半导体层 基质。