公开(公告)号：US20110143580A1

公开(公告)日：2011-06-16

申请号：US12957338

申请日：2010-11-30

申请人： Ming-Tsung Lee ,  Yu-Chi Jen

发明人： Ming-Tsung Lee ,  Yu-Chi Jen

IPC分类号： H01R13/00 ,  H05K7/20

CPC分类号： H05K7/20445

摘要： A socket terminal heat-dissipating mechanism is provided for use in an electronic device. The electronic device includes a frame and a casing. The socket terminal heat-dissipating mechanism includes a socket and an insulating layer. The socket is mounted in the frame of the electronic device, and includes a contact terminal. The insulating layer is arranged between the contact terminal and the casing of the electronic device, wherein heat energy is conducted from the contact terminal of the socket to the casing through the insulating layer, and passively dissipated away.

摘要翻译： 提供一种用于电子设备的插座端子散热机构。 电子设备包括框架和壳体。 插座端子散热机构包括插座和绝缘层。 插座安装在电子设备的框架中，并且包括接触端子。 绝缘层设置在电子设备的接触端子和壳体之间，其中热能通过绝缘层从插座的接触端子传导到壳体，并被动地消散。

公开(公告)号：US08287301B2

公开(公告)日：2012-10-16

申请号：US12957338

申请日：2010-11-30

申请人： Ming-Tsung Lee ,  Yu-Chi Jen

发明人： Ming-Tsung Lee ,  Yu-Chi Jen

IPC分类号： H01R13/00

CPC分类号： H05K7/20445

摘要： A socket terminal heat-dissipating mechanism is provided for use in an electronic device. The electronic device includes a frame and a casing. The socket terminal heat-dissipating mechanism includes a socket and an insulating layer. The socket is mounted in the frame of the electronic device, and includes a contact terminal. The insulating layer is arranged between the contact terminal and the casing of the electronic device, wherein heat energy is conducted from the contact terminal of the socket to the casing through the insulating layer, and passively dissipated away.

摘要翻译： 提供一种用于电子设备的插座端子散热机构。 电子设备包括框架和壳体。 插座端子散热机构包括插座和绝缘层。 插座安装在电子设备的框架中，并且包括接触端子。 绝缘层设置在电子设备的接触端子和壳体之间，其中热能通过绝缘层从插座的接触端子传导到壳体，并被动地消散。

公开(公告)号：US20130320445A1

公开(公告)日：2013-12-05

申请号：US13487268

申请日：2012-06-04

申请人： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Shih-Chieh Pu ,  Wen-Fang Lee ,  Chih-Chung Wang

发明人： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Shih-Chieh Pu ,  Wen-Fang Lee ,  Chih-Chung Wang

IPC分类号： H01L29/78

CPC分类号： H01L29/0878 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816

摘要： A high voltage metal-oxide-semiconductor (HV MOS) device includes a substrate, a gate positioned on the substrate, a drain region formed in the substrate, a source region formed in the substrate, a first doped region formed in between the drain region and the source region, and a second doped region formed over a top of the first doped region or/and under a bottom of the first doped region. The drain region, the source region, and the second doped region include a first conductivity type, the first doped region includes a second conductivity type, and the first conductivity type and the second conductivity type are complementary.

摘要翻译： 高压金属氧化物半导体（HV MOS）器件包括衬底，位于衬底上的栅极，形成在衬底中的漏极区，形成在衬底中的源极区，形成在漏极区之间的第一掺杂区 和源极区，以及形成在第一掺杂区的顶部或/或第一掺杂区的底部下方的第二掺杂区。 漏极区域，源极区域和第二掺杂区域包括第一导电类型，第一掺杂区域包括第二导电类型，并且第一导电类型和第二导电类型是互补的。

公开(公告)号：US20090065879A1

公开(公告)日：2009-03-12

申请号：US11853499

申请日：2007-09-11

申请人： Yun-Han Ma ,  Ming-Tsung Lee ,  Shih-Ming Liang ,  Hwi-Huang Chen

发明人： Yun-Han Ma ,  Ming-Tsung Lee ,  Shih-Ming Liang ,  Hwi-Huang Chen

IPC分类号： H01L29/94 ,  H01L21/336

CPC分类号： H01L29/513 ,  H01L21/28167 ,  H01L29/0653 ,  H01L29/4908

摘要： A high voltage device is provided. The high voltage device includes a gate on a substrate, two source/drain regions in the substrate beside the gate, and a composite gate dielectric layer that includes at least two stacked continuous layers, extending from one side to another side of the gate. Wherein, the at least two stacked continuous layers is a combination of at least one thermal oxide layer and at least one chemical vapor deposited layer.

摘要翻译： 提供高压装置。 高电压器件包括衬底上的栅极，栅极旁边的衬底中的两个源极/漏极区域和复合栅极电介质层，其包括从栅极的一侧延伸到另一侧的至少两个层叠的连续层。 其中，所述至少两个堆叠的连续层是至少一个热氧化物层和至少一个化学气相沉积层的组合。

公开(公告)号：US07331799B1

公开(公告)日：2008-02-19

申请号：US11626985

申请日：2007-01-25

申请人： Ming-Tsung Lee

发明人： Ming-Tsung Lee

IPC分类号： H01R12/00

CPC分类号： H05K3/301 ,  H01G2/06 ,  H01G4/232 ,  H01G4/30 ,  H05K3/3426 ,  H05K2201/1031 ,  H05K2201/10515 ,  H05K2201/10636 ,  Y02P70/611

摘要： A stacked electronic component includes multiple energy storage units and a fastening device. Each energy storage unit has a first electrode and a second electrode. The fastening device includes first and second fastening member disposed on opposite sides of the energy storage units. Each of the first and second fastening members includes a body plate, at least a clamping structure extending from two edges of the body plate and at least a connecting part electrically connected to the body plate and the circuit board. The energy storage units are clamped by the clamping structures of the first and second fastening members and the first and second electrodes are electrically connected to the body plates of the first and second fastening members, so that the first and second electrodes are electrically connected to the circuit board through the body plates and the connecting parts of the first and second fastening members.

摘要翻译： 堆叠的电子部件包括多个能量存储单元和紧固装置。 每个能量存储单元具有第一电极和第二电极。 紧固装置包括设置在能量存储单元的相对侧上的第一和第二紧固构件。 第一和第二紧固构件中的每一个包括主体板，至少一个从主体板的两个边缘延伸的夹持结构和至少一个电连接到主体板和电路板的连接部分。 能量存储单元由第一和第二紧固构件的夹持结构夹持，并且第一和第二电极电连接到第一和第二紧固构件的主体板，使得第一和第二电极电连接到 电路板通过主体板和第一和第二紧固构件的连接部分。

公开(公告)号：US20070062926A1

公开(公告)日：2007-03-22

申请号：US11228277

申请日：2005-09-19

申请人： Ming-Tsung Lee

发明人： Ming-Tsung Lee

IPC分类号： A21B1/00

CPC分类号： A47J36/24 ,  A47J36/2405

摘要： An electric heat-reserving box includes a receiving frame, a separating plate, an electric heater, a heat-insulating plate, a bottom plate and plural food trays. The receiving frame has a hollow interior with an upper holding rim. The separating plate positioned under the receiving frame is provided with a switch and a rotary button, having its opposite sides respectively fixed with a handle. The electric heater is assembled in the separating plate and connected with the switch and the rotary button, controlled by the switch to be turned on or off. The heat-insulating plate and the bottom plate are assembled under the electric heater, and the food trays are placed on the receiving frame. The switch is turned on to let the electric heater produce heat source supplied to the food trays, and the rotary button functions to regulate the temperature.

摘要翻译： 电热储存箱包括接收框架，分隔板，电加热器，绝热板，底板和多个食物托盘。 接收框架具有具有上保持边缘的中空内部。 位于接收框架下方的分隔板设置有开关和旋转按钮，其相对侧分别固定有手柄。 电加热器组装在分离板中，并与开关和旋转按钮连接，由开关控制以打开或关闭。 绝热板和底板组装在电加热器下方，食物托盘放置在接收框架上。 开关打开，使电加热器产生供应给食物托盘的热源，旋转按钮用于调节温度。

公开(公告)号：USD427838S

公开(公告)日：2000-07-11

申请号：US114055

申请日：1999-11-18

申请人： Ming-Tsung Lee

设计人： Ming-Tsung Lee

公开(公告)号：US6087633A

公开(公告)日：2000-07-11

申请号：US442087

申请日：1999-11-18

申请人： Ming-Tsung Lee

发明人： Ming-Tsung Lee

IPC分类号： A47J37/04 ,  A47J37/06

CPC分类号： A47J37/0709 ,  A47J37/041 ,  A47J37/049

摘要： An electric oven with a baking frame for placing an object to be broiled or baked on it, includes a base, a net, a support frame vertically fitted in one side of the base and having several grooves respectively in two vertical sides, a position frame, a piercing member and a motor. The base has a large recess with four circumferential edges provided with an insert hole in two opposite edges. The position frame vertically fixed in the other side of the base has several pairs of hang holes in an upper portion and a slot formed under each pair of the hang holes corresponds to the grooves of the support frame. After the pointed end of the piercing memer piercing an object is inserted in a shaft hole of the motor, the piercing member is slowly rotated so as to have the object broiled evenly on the oven.

摘要翻译： 具有用于放置要烤制或烘烤的物体的烘烤框的电烤箱包括基部，网状物，垂直装配在基部的一侧中并且分别具有两个垂直侧的多个槽的支撑框架，位置框架 ，穿孔构件和电动机。 底座具有大的凹槽，四个圆周边缘在两个相对的边缘上设置有插入孔。 在基座的另一侧垂直固定的位置框架在上部具有几对悬挂孔，并且在每对悬挂孔下形成的槽对应于支撑框架的槽。 在将穿刺物体的刺穿记忆器的尖端插入电动机的轴孔中之后，穿刺构件缓慢旋转，使得物体均匀地烤在烤箱上。

公开(公告)号：US09105493B2

公开(公告)日：2015-08-11

申请号：US13476019

申请日：2012-05-21

申请人： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Wen-Fang Lee ,  Chih-Chung Wang ,  Te-Yuan Wu

发明人： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Wen-Fang Lee ,  Chih-Chung Wang ,  Te-Yuan Wu

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/0878 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816

摘要： A layout pattern of a high voltage metal-oxide-semiconductor transistor device includes a first doped region having a first conductivity type, a second doped region having the first conductivity type, and an non-continuous doped region formed in between the first doped region and the second doped region. The non-continuous doped region further includes a plurality of third doped regions, a plurality of gaps, and a plurality of fourth doped regions. The gaps and the third doped regions s are alternately arranged, and the fourth doped regions are formed in the gaps. The third doped regions include a second conductivity type complementary to the first conductivity type, and the fourth doped regions include the first conductivity type.

摘要翻译： 高电压金属氧化物半导体晶体管器件的布局图案包括具有第一导电类型的第一掺杂区域，具有第一导电类型的第二掺杂区域和形成在第一掺杂区域和第二掺杂区域之间的非连续掺杂区域 第二掺杂区域。 非连续掺杂区还包括多个第三掺杂区，多个间隙和多个第四掺杂区。 间隙和第三掺杂区域交替排列，并且第四掺杂区域形成在间隙中。 第三掺杂区域包括与第一导电类型互补的第二导电类型，并且第四掺杂区域包括第一导电类型。

公开(公告)号：US20130307071A1

公开(公告)日：2013-11-21

申请号：US13476019

申请日：2012-05-21

申请人： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Wen-Fang Lee ,  Chih-Chung Wang ,  Te-Yuan Wu

发明人： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Wen-Fang Lee ,  Chih-Chung Wang ,  Te-Yuan Wu

IPC分类号： H01L29/78

CPC分类号： H01L29/0878 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816

摘要： A layout pattern of a high voltage metal-oxide-semiconductor transistor device includes a first doped region having a first conductivity type, a second doped region having the first conductivity type, and an non-continuous doped region formed in between the first doped region and the second doped region. The non-continuous doped region further includes a plurality of third doped regions, a plurality of gaps, and a plurality of fourth doped regions. The gaps and the third doped regions s are alternately arranged, and the fourth doped regions are formed in the gaps. The third doped regions include a second conductivity type complementary to the first conductivity type, and the fourth doped regions include the first conductivity type.

摘要翻译： 高电压金属氧化物半导体晶体管器件的布局图案包括具有第一导电类型的第一掺杂区域，具有第一导电类型的第二掺杂区域和形成在第一掺杂区域和第二掺杂区域之间的非连续掺杂区域 第二掺杂区域。 非连续掺杂区还包括多个第三掺杂区，多个间隙和多个第四掺杂区。 间隙和第三掺杂区域交替排列，并且第四掺杂区域形成在间隙中。 第三掺杂区域包括与第一导电类型互补的第二导电类型，并且第四掺杂区域包括第一导电类型。