公开(公告)号：US20080067076A1

公开(公告)日：2008-03-20

申请号：US11523135

申请日：2006-09-19

申请人： Ming-Yuan Cheng ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Kei-Wei Chen ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang

发明人： Ming-Yuan Cheng ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Kei-Wei Chen ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang

IPC分类号： C25D3/00

CPC分类号： C25D3/02 ,  C02F3/34

摘要： A novel method, which is suitable to substantially reduce the presence of oxygen micro-bubbles in an electroplating bath solution, is disclosed. The method includes the addition of aerobic bacteria to the electroplating bath solution to consume oxygen in the solution. Reduction of the oxygen content in the electroplating bath solution prevents oxygen micro-bubbles from forming in the solution and becoming trapped between the solution and the surface of a metal seed layer on a substrate to block the electroplating of a metal film onto the seed layer. Consequently, the presence of surface pits and other structural defects in the surface of the electroplated metal film is substantially reduced.

摘要翻译： 公开了一种适合于显着减少电镀浴液中氧微气泡存在的新方法。 该方法包括向电镀浴溶液中加入需氧细菌以消耗溶液中的氧气。 电镀浴溶液中的氧含量的降低防止溶液中形成氧微气泡并被困在溶液与基底上的金属种子层的表面之间，以阻止金属膜在种子层上的电镀。 因此，电镀金属膜的表面中存在表面凹坑等结构缺陷。

公开(公告)号：US20060196765A1

公开(公告)日：2006-09-07

申请号：US11074524

申请日：2005-03-07

申请人： Hsi-Kuei Cheng ,  Chieh-Tsao Wang ,  Hsien-Ping Feng ,  Min-Yuan Cheng ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang ,  Chyi-Tsong NI

发明人： Hsi-Kuei Cheng ,  Chieh-Tsao Wang ,  Hsien-Ping Feng ,  Min-Yuan Cheng ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang ,  Chyi-Tsong NI

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/165 ,  C23C14/0641 ,  C23C14/0682 ,  C23C14/3421 ,  C23C14/54 ,  H01J37/32568 ,  H05K3/16

摘要： A method for forming a microelectronic layer while employing a sputtering method employs a reactor chamber. A sputtering target and a substrate are positioned within the reactor chamber, along with a sputtering target heater at a side of sputtering target opposite the substrate. At least one of: (1) a heater to sputtering target distance; (2) sputtering power; (3) deposition time; and (4) sputtering gas flow rate, is controlled in accord with a pre-determined function of sputtering target lifetime to provide enhanced uniformity of the deposited layer.

摘要翻译： 采用溅射法形成微电子层的方法采用反应室。 溅射靶和基板位于反应器室内，与溅射靶相对的基板上的溅射靶加热器一起。 以下至少一个：（1）加热器以溅射目标距离; （2）溅射功率; （3）沉积时间; 和（4）溅射气体流速，根据溅射靶寿命的预定功能进行控制，以提供沉积层的均匀性。

公开(公告)号：US07256120B2

公开(公告)日：2007-08-14

申请号：US11024917

申请日：2004-12-28

申请人： Jung-Chin Tsao ,  Chi-Wen Liu ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Steven Lin ,  Min-Yuan Cheng

发明人： Jung-Chin Tsao ,  Chi-Wen Liu ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Steven Lin ,  Min-Yuan Cheng

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/02068 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76876

摘要： A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.

摘要翻译： 一种形成具有减少的缺陷的金属层的方法，包括提供其上形成有电介质层的结构，形成具有开口的电介质层，用金属种子层衬套开口，用清洁工艺处理金属种子层以除去 从其中污染，并在金属种子层上形成金属层。

公开(公告)号：US20060141768A1

公开(公告)日：2006-06-29

申请号：US11024917

申请日：2004-12-28

申请人： Jung-Chin Tsao ,  Chi-Wen Liu ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Steven Lin ,  Min-Yuan Cheng

发明人： Jung-Chin Tsao ,  Chi-Wen Liu ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Steven Lin ,  Min-Yuan Cheng

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/02068 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76876

摘要： A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.

摘要翻译： 一种形成具有减少的缺陷的金属层的方法，包括提供其上形成有电介质层的结构，形成具有开口的电介质层，用金属种子层衬套开口，用清洁工艺处理金属种子层以除去 从其中污染，并在金属种子层上形成金属层。