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    Method of reducing oxygen content in ECP solution
    1.
    发明申请
    Method of reducing oxygen content in ECP solution 审中-公开
    降低ECP溶液中氧含量的方法

    公开(公告)号：US20080067076A1

    公开(公告)日：2008-03-20

    申请号：US11523135

    申请日：2006-09-19

    申请人： Ming-Yuan Cheng ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Kei-Wei Chen ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang

    发明人： Ming-Yuan Cheng ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Kei-Wei Chen ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang

    IPC分类号： C25D3/00

    CPC分类号： C25D3/02 ,  C02F3/34

    摘要： A novel method, which is suitable to substantially reduce the presence of oxygen micro-bubbles in an electroplating bath solution, is disclosed. The method includes the addition of aerobic bacteria to the electroplating bath solution to consume oxygen in the solution. Reduction of the oxygen content in the electroplating bath solution prevents oxygen micro-bubbles from forming in the solution and becoming trapped between the solution and the surface of a metal seed layer on a substrate to block the electroplating of a metal film onto the seed layer. Consequently, the presence of surface pits and other structural defects in the surface of the electroplated metal film is substantially reduced.

    摘要翻译： 公开了一种适合于显着减少电镀浴液中氧微气泡存在的新方法。 该方法包括向电镀浴溶液中加入需氧细菌以消耗溶液中的氧气。 电镀浴溶液中的氧含量的降低防止溶液中形成氧微气泡并被困在溶液与基底上的金属种子层的表面之间，以阻止金属膜在种子层上的电镀。 因此，电镀金属膜的表面中存在表面凹坑等结构缺陷。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    3.
    发明授权
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 失效
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US07030016B2

    公开(公告)日：2006-04-18

    申请号：US10812729

    申请日：2004-03-30

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer-that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层 - 过度填充沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    4.
    发明申请
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 失效
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US20050227479A1

    公开(公告)日：2005-10-13

    申请号：US10812729

    申请日：2004-03-30

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/311 ,  H01L21/768

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer-that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层 - 过度填充沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    5.
    发明申请
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 有权
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US20060216930A1

    公开(公告)日：2006-09-28

    申请号：US11347946

    申请日：2006-02-06

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层超过沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    7.
    发明授权
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 有权
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US07432192B2

    公开(公告)日：2008-10-07

    申请号：US11347946

    申请日：2006-02-06

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层超过沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。