摘要:
Disclosed are a polymer solar cell and a preparation method thereof. The preparation method comprises: successively preparing on a clean glass substrate (1), a cathode (2), an electronic buffer layer (3) and an active layer (4) by the steps of dissolving poly(3,4-ethylenedioxythiophene) and polymerized p-styrene sulphonic acid, dissolving zinc oxide into acetic acid to obtain a zinc oxide solution, mixing the zinc oxide solution with the solution of poly(3,4-ethylenedioxythiophene) and polymerized p-styrene sulphonic acid to obtain a mixed solution, spin-coating the mixed solution on the active layer (4) and then by drying to obtain the anode (5), and finally obtain the polymer solar cell.
摘要:
Disclosed are a polymeric electroluminescent device and a method for preparing the same. The polymeric electroluminescent device includes an anode (20), a hole injecting layer (30), a hole transportation layer (40), a light-emitting layer (50), a hole barrier layer (60), an electron transportation layer (70), an electron injecting layer (80) and a cathode (90) laminated in succession, and the material for the hole barrier layer (60) is zinc oxide, magnesium oxide, zinc sulphide or cadmium sulphide. In the polymeric electroluminescent device, zinc oxide, magnesium oxide, zinc sulphide or cadmium sulphide has a large particle size, and can scatter the light to improve extraction efficiency; at the same time, zinc oxide, magnesium oxide, zinc sulphide or cadmium sulphide has a high work function, which can excellently prevent transition of the holes and increase the recombination possibility of excitons, thereby improving the light-emitting efficiency of the polymeric electroluminescent device.
摘要:
The invention relates to a counter electrode for a dye-sensitized solar cell and a manufacturing method thereof. The counter electrode comprises a conductive substrate and an acid doped polyaniline layer coated on at least one surface of the conductive substrate. The conductivity of the counter electrode is increased, the recombination probability of I3− and a conduction band electron is decreased, the bond strength of the acid doped polyaniline layer and the conductive substrate is enhanced, the electronic transmission rate and the conductivity of the counter electrode for the external circuit are further increased, and the production cost is reduced. The manufacturing method can simplify the production process, produce the stable performance counter electrode, increase the production efficiency, and reduce the requirement for production equipment, thus suitable for industrial production.
摘要:
Disclosed are an organic electroluminescent device and a preparation method thereof. The organic electroluminescent device is a top-emitting organic electroluminescent device having a reversed structure, and the preparation method is: dissolving zinc oxide with acetic acid to obtain a zinc oxide solution with a concentration of 0.3 g/ml-0.6 g/ml, adding a phthalocyanine substance in a mass of 1%-10% of the mass of the zinc oxide to obtain a mixture, spin-coating the mixture on a glass substrate (1) and then drying to obtain a cathode (2), and then preparing by vapor deposition, an electron injection layer (3), an electron transport layer (4), a luminescent layer (5), a hole transport layer (6), a hole injection layer (7) and an anode (8), successively, so as to obtain the organic electroluminescent device.
摘要:
The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of Ga2O3, Al2O3, SiO2 and ZnO according to the following percentage by mass: 0.5%˜10% of Ga2O3, 0.5%˜5% of Al2O3, 0.5%˜1.5% of SiO2, and the residue of ZnO; (2) sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2 Pa-5 Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15 sccm˜25 sccm, adopting a sputtering power of 40 W˜200 W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film.
摘要:
An organic electroluminescent device and a conductive substrate thereof are provided. Said conductive substrate includes a glass substrate, an indium tin oxide (ITO) layer and a metal oxide layer located between said glass substrate and said ITO layer. The refractive index of said metal oxide layer ranges between that of said glass substrate and said ITO layer. Due to the metal oxide layer, the refractive index of which ranges between that of the glass substrate and the ITO layer, is inserted into said conductive substrate, when the light extracts between the ITO/metal oxide layer and the metal oxide layer/glass, the critical angle of total reflection increases compared with that without the inserted metal oxide layer. Most part of light extracts out of the interface after refraction, and only small part of light is totally reflected, thus the light extraction enhances.
摘要:
Provided are a polymer solar cell (100) and a method for preparing the same. The solar cell (100) comprises the following structures: a conductive anode substrate (10), a hole buffer layer (20), an active layer (30), an electron transportation layer (40) and a cathode (50); and the material for the electron transportation layer (40) is an electron transportation material doped with a cerium salt and metal particles. The solar cell (100) effectively increases the rate of electron transportation, and decreases the potential barrier between the electron transportation layer (40) and the cathode (50).
摘要:
Cerium doped magnesium barium tungstate luminescent thin film, manufacturing method and application thereof are provided, said method for manufacturing cerium doped magnesium barium tungstate luminescent thin film comprises the following steps: mixing MgO, BaO, WO3 and Ce2O3, sintering for forming sputtering target, forming the precursor of cerium doped magnesium barium tungstate luminescent thin film by magnetron sputtering, annealing the precursor of cerium doped magnesium barium tungstate luminescent thin film, and then forming cerium doped magnesium barium tungstate luminescent thin film. Said cerium doped magnesium barium tungstate luminescent thin film exhibits high luminescence efficiency and high light emitting peaks in red and blue regions. Said method presents the advantages of simplified operation, less cost, and suitable for industrial preparation.
摘要翻译:提供铈掺杂的钡钡钨酸盐发光薄膜,其制造方法和应用,所述制造铈掺杂的钡钡钨酸盐发光薄膜的方法包括以下步骤:将MgO,BaO,WO 3和Ce 2 O 3混合,烧结以形成溅射靶,形成 通过磁控溅射法铈铈掺杂镁钡钨酸盐发光薄膜的前体,对铈掺杂的钡钡钨酸盐发光薄膜进行退火,然后形成铈掺杂的钡钡钨酸盐发光薄膜。 所述铈掺杂的钡钡钨酸盐发光薄膜在红色和蓝色区域表现出高发光效率和高发光峰。 所述方法具有操作简单,成本低,适用于工业制备的优点。
摘要:
Disclosed are an organic electroluminescent device having ternary doped hole transportation layer and a preparation method therefor. The electroluminescent device comprises a conductive anode substrate (1), a ternary doped hole transportation layer (2), a light-emitting layer (3), an electron transportation layer (4), an electron injecting layer (5) and a cathode layer (6), wherein the material for the ternary doped hole transportation layer (2) is a mixed material made by doping a cerium salt and a hole transportation material into a metal compound. The electroluminescent device forms p-doping by doping the cerium salt and the hold transportation material into the metal compound, which improves the ability of injecting and transporting holes, and increases the efficiency of light emission. Since the material for the ternary doped hole transportation layer (2) is predominately a metal compound, the process difficulty and manufacturing costs are reduced, facilitating industrial production and commercial applications.
摘要:
An organic electroluminescent device (OELD) and the fabrication method thereof are disclosed. The OELD comprises an anode(1), a cathode(2) opposite to the anode(1) and a light emission structure(3) between the anode(1) and the cathode(2).The OELD also comprises an insulation layer(4) between the anode(1) and the light emission structure(3) and the insulation layer(4) is attached to the anode(1).The material of the insulation layer(4) is a lithium salt compound and the thickness of the insulation layer(4) is 0.5-5 nm. The insulation layer is arranged on the anode(1) to block the velocity of holes injecting into the light emission structure(3) from the anode, thereby ensuring the consistency in the amount of holes and electrons of the light emission structure(3), highly increasing the recombination probability of electrons and holes and reducing the influence of excess holes to the emission property of the device. Therefore the emission property of the device is highly improved.