Method for forming a recognition mark on a substrate for a KGD
    7.
    发明授权
    Method for forming a recognition mark on a substrate for a KGD 失效
    在KGD的基板上形成识别标记的方法

    公开(公告)号:US06835318B2

    公开(公告)日:2004-12-28

    申请号:US10067890

    申请日:2002-02-08

    IPC分类号: H01B1300

    摘要: A method for forming a recognition mark on the back surface of a substrate for a KGD that can be easily produced at a low manufacturing cost and permits repeated use of a substrate is provided. In the method, wiring patterns are formed on a surface of one side of an insulating substrate. The method includes a step of forming a conductive pattern as a recognition mark on one surface where the wiring patterns are formed, and a step of forming a through hole from a surface where the wiring pattern is not formed toward the conductive pattern. In the substrate, bumps connected with the KGD are formed on the surface on which the wiring patterns are not formed. Also, the conductive pattern may have a shape as the recognition mark or the through hole may have the shape as the recognition mark.

    摘要翻译: 提供了一种用于在用于KGD的基板的背面上形成识别标记的方法,其可以以低制造成本容易地制造并且允许重复使用基板。 在该方法中,在绝缘基板的一侧的表面上形成布线图案。 该方法包括在形成布线图案的一个表面上形成作为识别标记的导电图案的步骤,以及从未形成布线图案的表面向导电图案形成通孔的步骤。 在基板上,在没有形成布线图案的表面上形成与KGD连接的凸块。 此外,导电图案可以具有识别标记或通孔可以具有作为识别标记的形状的形状。

    Semiconductor light-emitting device and process for production thereof
    10.
    发明授权
    Semiconductor light-emitting device and process for production thereof 失效
    半导体发光装置及其制造方法

    公开(公告)号:US08659040B2

    公开(公告)日:2014-02-25

    申请号:US13439895

    申请日:2012-04-05

    IPC分类号: H01L33/32

    CPC分类号: H01L33/22 H01L33/005

    摘要: One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

    摘要翻译: 本发明的一个方面提供了一种提高亮度的半导体发光器件,并且还提供了其生产方法。 该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。 在该过程中,光提取表面部分地被保护膜覆盖,以保护其中形成电极的区域。 然后在程序之后最后形成电极。 该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。 在电极和光提取表面之间,形成接触层以在它们之间建立欧姆接触。