-
公开(公告)号：US09627350B2
公开(公告)日：2017-04-18
申请号：US14959139
申请日：2015-12-04
发明人： Yasunari Hino , Daisuke Kawabata
CPC分类号： H01L24/83 , H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/2711 , H01L2224/27334 , H01L2224/27505 , H01L2224/27848 , H01L2224/29013 , H01L2224/29139 , H01L2224/29147 , H01L2224/29294 , H01L2224/29347 , H01L2224/2957 , H01L2224/2969 , H01L2224/32054 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45147 , H01L2224/48137 , H01L2224/48175 , H01L2224/48472 , H01L2224/73265 , H01L2224/743 , H01L2224/82203 , H01L2224/83192 , H01L2224/83447 , H01L2224/8384 , H01L2224/83986 , H01L2224/92247 , H01L2224/97 , H01L2224/83 , H01L2924/00014 , H01L2924/00012
摘要： A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor element. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.
-
公开(公告)号：US11094664B2
公开(公告)日：2021-08-17
申请号：US16746042
申请日：2020-01-17
发明人： Hiroaki Tatsumi , Sho Kumada , Osamu Suzuki , Daisuke Kawabata
IPC分类号： H01L21/50 , H01L23/00 , H01L23/488 , H01L23/373 , H01L23/12 , H01L23/498 , H01L25/07 , H01L29/16 , H01L29/20 , H01L29/739 , H01L29/78 , H01L29/861
摘要： A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.
-
公开(公告)号：US10573617B2
公开(公告)日：2020-02-25
申请号：US15740873
申请日：2016-06-28
发明人： Hiroaki Tatsumi , Sho Kumada , Osamu Suzuki , Daisuke Kawabata
IPC分类号： H01L21/50 , H01L23/00 , H01L23/488 , H01L23/373 , H01L23/12 , H01L23/498 , H01L25/07 , H01L29/16 , H01L29/20 , H01L29/739 , H01L29/78 , H01L29/861
摘要： A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.
-
-
搜索结果
3 条记录 (耗时 0.018 秒)
