公开(公告)号：US20230115289A1

公开(公告)日：2023-04-13

申请号：US17907992

申请日：2020-05-14

申请人： Mitsubishi Electric Corporation

发明人： Koji YAMAZAKI

IPC分类号： H01L23/00

摘要： In a semiconductor device according to the present disclosure, one end and the other end of a plurality of insulation covering wires are joined to a connection region in an upper electrode of a DBC substrate over a semiconductor element while an insulation covering portion in a center region has contact with a surface of the semiconductor element. The plurality of insulation covering wires are provided along an X direction in the same manner as the plurality of metal wires. The plurality of insulation covering wires are provided with no loosening, thus have press force of pressing the semiconductor element in a direction of the solder joint portion.

公开(公告)号：US20210305194A1

公开(公告)日：2021-09-30

申请号：US17264873

申请日：2018-09-25

申请人： Mitsubishi Electric Corporation

发明人： Takashi IJIMA ,  Koji YAMAZAKI

IPC分类号： H01L23/00 ,  H01P3/00 ,  H01P11/00

摘要： Provided is a metal joint (5) including: a Ag—Cu—Zn layer (7); and Cu—Zn layers (6) joined to both surfaces of the Ag—Cu—Zn layer (7), wherein the Ag—Cu—Zn layer (7) has a composition in which a Cu component is 1 atm % or more and 10 atm % or less, a Zn component is 1 atm % or more and 40 atm % or less, and the balance is a Ag component with respect to the total 100 atm %, and wherein the Cu—Zn layers (6) have a composition in which a Zn component is 10 atm % or more and 40 atm % or less and the balance is a Cu component with respect to the total 100 atm %. It is therefore possible to obtain the metal joint (5), which is capable of joining metal base materials to each other without being limited to aluminum-based materials, and also have high mechanical strength.

公开(公告)号：US20210343676A1

公开(公告)日：2021-11-04

申请号：US17281984

申请日：2018-11-08

申请人： Mitsubishi Electric Corporation

发明人： Koji YAMAZAKI ,  Yoshio TAMURA

IPC分类号： H01L23/00

摘要： Provided is a joint structure interposed between a semiconductor element and a substrate, the joint structure including: a Sn phase; Cu alloy particles containing P in an amount of 1 mass % or more and less than 7 mass %; and Ag particles, wherein the Cu alloy particles are each coated with a Cu6Sn5 layer, wherein the Ag particles are each coated with a Ag3Sn layer, wherein the Cu alloy particles and the Ag particles are at least partially bonded to each other through a Cu10Sn3 phase, wherein a total of addition amounts of the Cu alloy particles and the Ag particles is 25 mass % or more and less than 65 mass % with respect to the joint structure, and wherein a mass ratio of the addition amount of the Ag particles to the addition amount of the Cu alloy particles is 0.2 or more and less than 1.2.

公开(公告)号：US20200262010A1

公开(公告)日：2020-08-20

申请号：US16492806

申请日：2018-01-26

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Koji YAMAZAKI ,  Tomoaki KATO

IPC分类号： B23K35/28 ,  B32B15/01 ,  B23K1/19 ,  C22C18/04

摘要： A bonded structure, including a Zn-based brazing filler metal and a Cu-based bonding object bonded to each other, wherein the bonded structure includes a joint including a first alloy phase, a second alloy phase and a third alloy phase between the Zn-based brazing filler metal and the Cu-based bonding object, wherein the second alloy phase is formed at an interface between the first alloy phase and the third alloy phase, and wherein, in a cross section parallel to a bonding direction, a ratio of the second alloy phase at the interface between the first alloy phase and the third alloy phase is less than 80%.

公开(公告)号：US20200273762A1

公开(公告)日：2020-08-27

申请号：US16480106

申请日：2017-12-20

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Koji YAMAZAKI ,  Tomoaki KATO

IPC分类号： H01L23/14 ,  H01L23/367 ,  H01L21/52

摘要： A semiconductor element bonding body including: a substrate, in which a concave portion is formed; and a semiconductor element placed in the concave portion to be mounted to the substrate. A portion of the substrate in which the concave portion is formed is made of Cu. The concave portion has a perimeter portion in which a level difference is formed, and the level difference has a height d of 20 μm or more and less than 50 μm. The concave portion has a bottom surface having a flatness degree of λ/8.7 μm or more and λ/1.2 μm or less when a wavelength λ of a laser is 632.8 nm. A metal film is formed on the semiconductor element, and the bottom surface of the concave portion and the metal film are bonded directly to each other.

公开(公告)号：US20230054798A1

公开(公告)日：2023-02-23

申请号：US17792404

申请日：2020-03-27

申请人： Mitsubishi Electric Corporation

发明人： Takashi IJIMA ,  Koji YAMAZAKI

IPC分类号： H01L23/00 ,  H01L23/498 ,  F21V8/00 ,  B23K35/00 ,  B23K35/28 ,  B23K35/30 ,  B23K20/00

摘要： Provided is a metal jointed body, joined by solid-phase joining in the atmosphere, in which no protrusion of molten joining material occurs, that improves dimensional stability. A metal jointed body is formed by (A) making Ag films of two metal laminated bodies opposed to each other, the metal jointed body being configured by sequentially laminating a Zn film and an Ag film on an Al substrate serving as a member to be joined, and (B) bringing the Ag films into contact with each other, then (C) heating is performed while pressurizing, and closely adhering and solid-phase joining the Ag films to each other. The completed metal jointed body is a portion where Al—Ag alloy layers are provided on both sides of an Ag—Zn—Al alloy layer to join the Al substrates to each other.

公开(公告)号：US20220415747A1

公开(公告)日：2022-12-29

申请号：US17780519

申请日：2019-12-26

申请人： Mitsubishi Electric Corporation

发明人： Yoshinori YOKOYAMA ,  Tetsu NEGISHI ,  Koji YAMAZAKI

IPC分类号： H01L23/367 ,  H01L23/053 ,  H05K3/32

摘要： A power module is obtained in which the thermal resistance in the range from a semiconductor device to a base plate is reduced and the stress in the joining portion is relieved. The power module includes at least one semiconductor device, an insulating substrate having an insulating layer, a circuit layer provided on an upper surface of the insulating layer and a metal layer provided on a lower surface of the insulating layer, and a sintering joining member with an upper surface larger in outer circumference than a back surface of the at least one semiconductor device, to join together the back surface of the at least one semiconductor device and an upper surface of the circuit layer on an upper-surface side of the insulating layer.

公开(公告)号：US20190221540A1

公开(公告)日：2019-07-18

申请号：US16302822

申请日：2016-12-13

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Koji YAMAZAKI ,  Tomoaki KATO

IPC分类号： H01L23/00 ,  H01L29/16 ,  H01L21/285 ,  H01L21/78

CPC分类号： H01L24/83 ,  H01L21/28556 ,  H01L21/52 ,  H01L21/78 ,  H01L23/13 ,  H01L24/27 ,  H01L24/29 ,  H01L29/1608 ,  H01L2224/27452 ,  H01L2224/29155 ,  H01L2224/29666 ,  H01L2224/83193 ,  H01L2224/8384 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0134

摘要： A method of manufacturing a semiconductor device of the present disclosure includes the steps of sequentially forming an adhesion-improving film, a Pt film, a Sn film, and an Au film on a semiconductor wafer through vapor deposition; dicing the semiconductor wafer to obtain a semiconductor element; sequentially forming a Ni film and an Au film on a substrate through vapor deposition; and laminating the semiconductor element and the substrate so that the Au film formed on the semiconductor element and the Au film formed on the substrate face each other, followed by joining the semiconductor element and the substrate through heating.

公开(公告)号：US20160351523A1

公开(公告)日：2016-12-01

申请号：US15112078

申请日：2014-12-26

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Koji YAMAZAKI

IPC分类号： H01L23/00 ,  B23K35/30 ,  B23K35/02 ,  H01L29/16 ,  C22F1/14 ,  C22C5/06 ,  B23K20/02 ,  H01L29/20

CPC分类号： H01L24/29 ,  B23K20/00 ,  B23K20/026 ,  B23K35/0233 ,  B23K35/30 ,  B23K35/3006 ,  B23K2101/40 ,  C22C5/06 ,  C22C12/00 ,  C22C13/00 ,  C22F1/14 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/36 ,  H01L24/40 ,  H01L24/83 ,  H01L29/1602 ,  H01L29/2003 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/83101 ,  H01L2224/8383 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H05K1/0271 ,  H05K1/0306 ,  H05K3/3463 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/37099 ,  H01L2224/84

摘要： The present invention has an object to achieve bonding which satisfies both in heat resistivity and in stress-relaxation ability, and the bonding material according to this invention is a sheet-like bonding material 1 made of a silver-bismuth alloy which, when heated in a state being in contact with a metal material as a bonding target (for example, surface layers 2f, 3f), forms in the metal material (as its material, for example, gold, silver or copper) a diffusion layer Ld2, Ld3 of silver due to solid-phase diffusion reaction, so as to be bonded to the metal material, said bonding material being characterized by containing not less than 1 mass % but not more than 5 mass % of bismuth.

摘要翻译： 本发明的目的是实现在热电阻率和应力松弛能力方面均达到的结合，根据本发明的接合材料是由银 - 铋合金制成的片状接合材料1，当被加热 在作为接合靶（例如表面层2f，3f）的金属材料接触的状态下，在金属材料（作为其材料，例如金，银或铜）中形成扩散层Ld2，Ld3 银，由于固相扩散反应，为了与金属材料接合，所述接合材料的特征在于含有不少于1质量％但不多于5质量％的铋。

公开(公告)号：US20160082552A1

公开(公告)日：2016-03-24

申请号：US14890202

申请日：2013-12-13

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Koji YAMAZAKI

IPC分类号： B23K35/28 ,  H01L23/31 ,  H01L23/00 ,  C22C18/00

CPC分类号： B23K35/282 ,  B23K35/28 ,  C22C18/00 ,  H01L23/3171 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/04042 ,  H01L2224/05618 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/08225 ,  H01L2224/291 ,  H01L2224/29118 ,  H01L2224/32227 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83101 ,  H01L2224/83815 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2224/45099

摘要： Zn based lead-free solder is obtained in which its range of practical melting points is between 300° C. and 350° C. The Zn based lead-free solder includes a Cr content of 0.05 through 0.2 wt %, an Al content of 0.25 through 1.0 wt %, an Sb content of 0.5 through 2.0 wt %, a Ge content of 1.0 through 5.8 wt %, and a Ga content of 5 through 10 wt %; or the Zn based lead-free solder includes a Cr content of 0.05 through 0.2 wt %, an Al content of 0.25 through 1.0 wt %, an Sb content of 0.5 through 2.0 wt %, a Ge content of 1.0 through 5.8 wt %, and an In content of 10 through 20 wt %.

摘要翻译： 得到Zn基无铅焊料，其实际熔点范围在300℃至350℃之间.Zn基无铅焊料的Cr含量为0.05-0.2重量％，Al含量为0.25 1.0重量％，Sb含量为0.5〜2.0重量％，Ge含量为1.0〜5.8重量％，Ga含量为5〜10重量％。 或Zn系无铅焊料的Cr含量为0.05〜0.2重量％，Al含量为0.25〜1.0重量％，Sb含量为0.5〜2.0重量％，Ge含量为1.0〜5.8重量％，以及 a含量为10〜20重量％。