公开(公告)号：US20220189859A1

公开(公告)日：2022-06-16

申请号：US17429946

申请日：2019-02-26

申请人： Mitsubishi Electric Corporation

发明人： Hodaka ROKUBUICHI ,  Kei YAMAMOTO ,  Kuniyuki SATO

IPC分类号： H01L23/495 ,  H01L23/31

摘要： A semiconductor apparatus that ensures heat dissipation using a heat dissipating member with multiple fins formed by folding a metal plate, a manufacturing method for the semiconductor apparatus, and a power converter are obtained. The semiconductor device is bonded to a lead frame. The lead frame is provided on an insulating layer and a metal base plate is provided on the face opposite to the face of the insulating layer on which the semiconductor device is bonded. The semiconductor device, the lead frame, the insulating layer, and the metal base plate are sealed with a sealing member in such a way that a portion of the lead frame and a portion of the metal base plate are exposed. The exposed portion of the metal base plate exposed from the sealing member is inserted in an opening of a support frame. A heat dissipating member is bonded to both the metal base plate and the support frame.

公开(公告)号：US20170033028A1

公开(公告)日：2017-02-02

申请号：US15303987

申请日：2015-03-17

申请人： Mitsubishi Electric Corporation

发明人： Tetsu NEGISHI ,  Mamoru TERAI ,  Kei YAMAMOTO

IPC分类号： H01L23/31 ,  H01L23/373 ,  H01L21/02 ,  H01L23/29 ,  H01L29/16

CPC分类号： H01L23/3171 ,  H01L21/02164 ,  H01L21/02271 ,  H01L23/29 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L23/373 ,  H01L23/562 ,  H01L29/1608 ,  H01L2224/73265

摘要： A semiconductor device includes: a semiconductor element which includes semiconductor substrate, an insulating film formed on a front surface of the semiconductor substrate and having an opening, and an electrode formed in the opening on the front surface of the semiconductor substrate; and a first protective film disposed to cover the semiconductor element. The insulating film has a thickness of not less than 1/500 of a thickness of the semiconductor substrate and not more than 4 μm. The insulating film has a compressive stress per film thickness of not less than 100 MPa/μm.

摘要翻译： 半导体器件包括：半导体元件，其包括半导体衬底，形成在半导体衬底的前表面上并具有开口的绝缘膜，以及形成在半导体衬底的前表面上的开口中的电极; 以及设置成覆盖半导体元件的第一保护膜。 该绝缘膜的厚度为半导体基板的厚度的1/500以上且4μm以下。 绝缘膜具有不小于100MPa /μm的膜厚度的压缩应力。

公开(公告)号：US20230070214A1

公开(公告)日：2023-03-09

申请号：US17795536

申请日：2020-03-13

申请人： Mitsubishi Electric Corporation

发明人： Hodaka ROKUBUICHI ,  Kei YAMAMOTO ,  Ken SAKAMOTO

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/00

摘要： A semiconductor device includes: a semiconductor element, a first lead frame, a second lead frame, and a thermally conductive member; and a sealing member sealing them. The first lead frame includes: a first portion exposed from a first side surface of the sealing member; and a second portion located closer to a lower surface of the sealing member than the first portion in a second direction crossing the lower surface. The semiconductor device further includes an intermediate frame which is located between the second portion and the fifth portion at least in the second direction. A distance, in the first direction, between the second portion and the intermediate frame is shorter than a distance, in the second direction, between an upper surface of the first portion and the upper surface of the second portion.

公开(公告)号：US20170352629A1

公开(公告)日：2017-12-07

申请号：US15537466

申请日：2015-09-29

申请人： Mitsubishi Electric Corporation

发明人： Akihisa FUKUMOTO ,  Tetsu NEGISHI ,  Kei YAMAMOTO ,  Toshiaki SHINOHARA ,  Kazuyasu NISHIKAWA

IPC分类号： H01L23/00 ,  H01L23/373 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/562 ,  H01L23/051 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3735 ,  H01L23/48 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29565 ,  H01L2224/29655 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/3754 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40155 ,  H01L2224/73213 ,  H01L2224/73263 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/37099

摘要： A power module includes a power semiconductor element, an interconnection material, a circuit board, an external terminal, a joining material, and a sealing resin. A clearance portion is continuously formed between the sealing resin and each of an end surface of the joining material and a surface of the interconnection material so as to extend from the end surface of the joining material to the surface of the interconnection material, the end surface of the joining material being located between the power semiconductor element and the interconnection material, the surface of the interconnection material being located between the end surface and a predetermined position of the interconnection material separated by a distance from the end surface.

公开(公告)号：US20220020672A1

公开(公告)日：2022-01-20

申请号：US17294685

申请日：2019-02-01

申请人： Mitsubishi Electric Corporation

发明人： Kei YAMAMOTO ,  Hodaka ROKUBUICHI

IPC分类号： H01L23/495 ,  H01L23/367 ,  H01L23/31

摘要： A semiconductor device includes a heat sink, an insulating layer, a lead frame, a power semiconductor element, a sealing resin, and fins. The heat sink has a first main surface and a second main surface opposed to each other. A lead frame including a lead terminal is disposed on the first main surface of the heat sink with the insulating layer interposed. The power semiconductor element is mounted on the lead frame. The sealing resin is formed to cover an inside region located inside of an outer peripheral region located around the entire periphery along the outer periphery of the first main surface of the heat sink. A first depression is formed along the sealing resin in the outer peripheral region of the first main surface.

公开(公告)号：US20180269140A1

公开(公告)日：2018-09-20

申请号：US15544552

申请日：2015-12-25

申请人： Mitsubishi Electric Corporation

发明人： Kazuhiro TADA ,  Kei YAMAMOTO ,  Mariko TAKAHARA

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L23/49568 ,  H01L21/565 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/48 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49548 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/37639 ,  H01L2224/37655 ,  H01L2224/40137 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/92157 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01032 ,  H01L2924/014 ,  H01L2924/013 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/2076 ,  H01L2924/00

摘要： A lead frame extends from inside a sealing resin to outside the sealing resin, and is placed to make contact with a main surface of an insulating sheet opposite to a heat dissipation plate. A semiconductor element is jointed to at least a portion of a main surface of the lead frame opposite to the insulating sheet within the sealing resin. The surface of the insulating sheet in contact with the lead frame is inclined and lowered to move away from the lead frame in an end region including at least a portion of an outermost end in plan view of the insulating sheet. The sealing resin enters a region between the lead frame and the insulating sheet in the end region. The lead frame is flat at least within the sealing resin.

公开(公告)号：US20180261520A1

公开(公告)日：2018-09-13

申请号：US15758381

申请日：2016-09-20

申请人： Mitsubishi Electric Corporation

发明人： Kei YAMAMOTO ,  Hodaka ROKUBUICHI ,  Dai NAKAJIMA ,  Kiyofumi KITAI ,  Yoichi GOTO

IPC分类号： H01L23/367 ,  H01L23/00 ,  H01L23/31 ,  H01L23/373 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00 ,  H01L25/07

CPC分类号： H01L23/3672 ,  H01L21/4882 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/73265 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.