摘要:
A pharmaceutical composition comprises (a) a pharmacologically effective amount of bunazosin or a pharmacologically acceptable salt thereof and (b) a monoglyceride of a fatty acid having 8 to 12 carbon atoms and/or a lactic acid ester of an aliphatic alcohol having 12 to 18 carbon atoms and is improved in percutaneous administration. ##STR1##
摘要:
(A) a diacylated dopamine derivative represented by the formula (I): ##STR1## wherein R.sup.1 represents an alkyl group having 3 to 7 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, substituted or unsubstituted phenyl group or a substituted or unsubstituted nitrogen-containing heterocyclic group; and R.sup.2 represents a hydrogen atom or a lower alkyl group; or a salt thereof; and(B) one or more compounds selected from lactic acid esters, fatty acid monoglycerides and higher alcohols; optionally together with(C) an unsaturated fatty acid monohydric alcohol ester. This preparation has a sustained effect, a high skin permeability and a low skin irritativeness.
摘要:
A pharmacological composition for percutaneous administration to a human patient comprises a pharmacologically effective amount of eperisone, a salt thereof, tolperisone or a salt thereof, a water-swellable crosslinked polyvinylpyrrolidone and a base carrier, and exhibits improved percutaneous absorption.
摘要:
At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.
摘要:
A steering apparatus of a vehicle having a steered tire wheel steered in correspondence to an operation of a steering wheel is disclosed. A first sensor detects an actual position indicating a present rotational position of the steering wheel. A second sensor detects a wheel angle of the steered tire wheel. The steered tire wheel is driven by an electric type drive apparatus. The drive apparatus outputs a power output for operating the steered tire wheel in correspondence to a steering wheel operation. When a deviation exists between the actual position of the steering wheel detected by the first sensor and the wheel angle of the steered tire wheel detected by the second sensor, a first compensation for compensating the actual position of the steering wheel so as to make the deviation small is executed by controlling the power output of the drive apparatus.
摘要:
An industrial vehicle has a body frame and an axle, which supports wheels and is pivotally supported by the body frame. A potentiometer is supported on the body frame and is spaced apart from the pivot axis of the axle by a predetermined distance. The potentiometer detects the pivot angle of the axle. A link mechanism amplifies motion of axle pivot and converts the axle motion into rotational or linear motion. The link mechanism then actuates the potentiometer in accordance with the converted motion.
摘要:
A forklift has an inner mast parallel to an outer mast and a fork vertically movable in accordance with a vertical movement of the inner mast. An apparatus for detecting the vertical position of the fork has a lever that is displaced when engaged by the inner mast when the inner mast is located in a predetermined vertical region. The lever intersects the path of the inner mast. The apparatus also includes a switch that is actuated by the lever.
摘要:
At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.
摘要:
A steering apparatus has a manipulator, a steered wheel being steered in a steered range, which is between two predetermined end positions. A first detector detects operation of the manipulator and outputs a signal representing the detection result. A second detector detects at least one of two states of the steered wheel and outputs a signal representing the detection result. In one of the states, the steered wheel is at either of the end positions. In the other state, the steered wheel is deviated from either of the end positions. A controller controls a driving device. The controller causes the driving device to steer the steered wheel in accordance with the signal from the first detector. When the steered wheel reaches either one of the end positions, the controller causes the driving device to stop steering motion of the steered wheel based on the signal from the second detector and to hold the steered wheel at the end position.