公开(公告)号：US20080224281A1

公开(公告)日：2008-09-18

申请号：US12125955

申请日：2008-05-23

Applicant: Mitsuru WATANABE ,  Tetsuya Fukui

Inventor： Mitsuru WATANABE ,  Tetsuya Fukui

IPC: H01L23/495 ,  H01L21/60

CPC classification number: H01L24/34 ,  H01L23/49562 ,  H01L24/37 ,  H01L2224/32245 ,  H01L2224/37599 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

Abstract: A semiconductor device comprises: a semiconductor chip; a first frame; a solder layer which bonds the solder bonding metal layer of the semiconductor chip and the first frame; and a second frame bonded to the rear face of the semiconductor chip. The semiconductor chip includes: a semiconductor substrate; a first metal layer provided on a major surface of the semiconductor substrate and forming a Schottky junction with the semiconductor substrate; a second metal layer provided on the first metal layer and primarily composed of aluminum; a third metal layer provided on the second metal layer and primarily composed of molybdenum or titanium; and a solder bonding metal layer provided on the third metal layer and including at least a forth metal layer which is primarily composed of nickel, ion or cobalt.

Abstract translation: 半导体器件包括：半导体芯片; 第一帧; 焊接层，其结合半导体芯片的焊料接合金属层和第一框架; 以及结合到半导体芯片的背面的第二框架。 半导体芯片包括：半导体衬底; 设置在所述半导体衬底的主表面上并与所述半导体衬底形成肖特基结的第一金属层; 设置在第一金属层上并主要由铝构成的第二金属层; 设置在第二金属层上并主要由钼或钛构成的第三金属层; 以及设置在所述第三金属层上并且包括主要由镍，离子或钴组成的至少第四金属层的焊料接合金属层。

公开(公告)号：US20110207263A1

公开(公告)日：2011-08-25

申请号：US13101454

申请日：2011-05-05

Applicant: Mitsuru WATANABE ,  Tetsuya FUKUI

Inventor： Mitsuru WATANABE ,  Tetsuya FUKUI

IPC: H01L21/78

CPC classification number: H01L24/34 ,  H01L23/49562 ,  H01L24/37 ,  H01L2224/32245 ,  H01L2224/37599 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

Abstract: The present invention relates to a method of manufacturing a semiconductor device including (1) forming a laminated structure on a major surface of a semiconductor substrate, the laminated structure comprising at least a first metal layer that forms a Schottky junction with the semiconductor substrate, a second metal layer primarily composed of aluminum, and a third metal layer primarily composed of molybdenum or titanium, (2) patterning the laminated structure into a predetermined configuration, (3) forming a solder bonding metal layer comprising at least nickel, ion or cobalt on the major surface of the semiconductor substrate having the patterned laminated structure formed thereon, (4) patterning the solder bonding metal layer into a pattern configuration identical to that of the laminated structure, (5) cutting the semiconductor substrate on which the laminated structure and the solder bonding metal layer are patterned to form a plurality of semiconductor chips, and (6) bonding the semiconductor chip to a first frame using at least one solder layer formed on the solder bonding metal layer on the major surface of the semiconductor substrate, and bonding a rear face of the semiconductor chip to a second frame.

Abstract translation: 本发明涉及一种制造半导体器件的方法，该半导体器件包括：（1）在半导体衬底的主表面上形成叠层结构，所述层压结构至少包括与半导体衬底形成肖特基结的第一金属层， 主要由铝构成的第二金属层和主要由钼或钛构成的第三金属层，（2）将层压结构图案化为规定的构造，（3）形成至少包含镍，离子或钴的焊料接合金属层， （4）将焊料接合金属层图案化为与层叠结构相同的图案构造，（5）切割其上层叠结构和层叠结构的半导体基板，其中， 图案化焊接金属层以形成多个半导体芯片，（6）将焊接接合金属层接合 使用在所述半导体衬底的主表面上的所述焊料接合金属层上形成的至少一个焊料层，将所述半导体芯片的后表面接合到第二框架的第一框架。

公开(公告)号：US20090046563A1

公开(公告)日：2009-02-19

申请号：US12188846

申请日：2008-08-08

Applicant: Mitsuru WATANABE ,  Akira Kunimoto

Inventor： Mitsuru WATANABE ,  Akira Kunimoto

IPC: G11B7/00

CPC classification number: G11B7/013 ,  G11B2007/0013

Abstract: An optical information recording and reproducing apparatus is provided for recording and/or reproducing information on an optical disc including a recording layer in which information can be recorded at recording positions each located at a different distance from a surface of the optical disc. The optical information recording and reproducing apparatus includes: a light source; and an objective lens which can converge the light flux from the light source onto one of the recording positions at a predetermined depth in the recording layer for recording information on the optical disc. When information to be recorded is recorded on one of the recording positions at a predetermined depth in the recording layer, the optical information recording and reproducing apparatus records information about the predetermined depth on one of the plurality of recording positions at the predetermined depth, with the information to be recorded.

Abstract translation: 提供了一种用于在包括记录层的光盘上记录和/或再现信息的光学信息记录和再现装置，其中信息可以记录在与光盘表面不同的距离处的记录位置处。 光信息记录和再现装置包括：光源; 以及物镜，其能够将来自光源的光束会聚到用于在光盘上记录信息的记录层中预定深度的记录位置之一。 当要记录的信息被记录在记录层中预定深度的一个记录位置上时，光信息记录和再现装置在预定深度的多个记录位置之一上记录关于预定深度的信息， 要记录的信息

公开(公告)号：US20120111059A1

公开(公告)日：2012-05-10

申请号：US13355127

申请日：2012-01-20

Applicant: Mitsuru WATANABE ,  Motoshi Ono

Inventor： Mitsuru WATANABE ,  Motoshi Ono

IPC: C03B23/20 ,  B05D3/02 ,  B05D3/06

CPC classification number: H01J9/261 ,  C03C8/24 ,  C03C23/0025 ,  C03C27/10 ,  G02F1/1339 ,  G02F2001/133354 ,  H01J11/10 ,  H01J11/48

Abstract: To provide a process for producing a glass member provided with a sealing material layer, capable of favorably forming a sealing material layer even in a case where the entire glass substrate cannot be heated.A sealing material paste prepared by mixing a sealing material containing a sealing glass and a laser absorbent with an organic binder is applied to a sealing region of a glass substrate 2 in the form of a frame. The frame-form coating layer 8 of the sealing material paste is selectively heated by irradiation with a laser light 9 along the coating layer 8 to fire the sealing material while the organic binder in the coating layer 8 is burnt out to form a sealing material layer 7. Using such a sealing material layer 7, a space between two glass substrates is sealed.

Abstract translation: 为了提供一种制造具有密封材料层的玻璃构件的方法，即使在整个玻璃基板不能被加热的情况下也能够有利地形成密封材料层。 通过将包含密封玻璃和激光吸收剂的密封材料与有机粘合剂混合而制备的密封材料浆料施加到玻璃基板2的框架形式的密封区域。 通过沿着涂层8照射激光9来选择性地加热密封材料浆料的框状涂层8，以便在涂覆层8中的有机粘合剂被烧尽时形成密封材料层 使用这样的密封材料层7，密封两个玻璃基板之间的空间。

公开(公告)号：US20090193905A1

公开(公告)日：2009-08-06

申请号：US11911778

申请日：2007-10-17

Applicant: Tetsuya FUKUDA ,  Katsuya KIKUIRI ,  Kiyoshi SATO ,  Mitsuru WATANABE

Inventor： Tetsuya FUKUDA ,  Katsuya KIKUIRI ,  Kiyoshi SATO ,  Mitsuru WATANABE

IPC: G01L9/12

CPC classification number: G01L9/0073

Abstract: Embodiments of the present disclosure are directed to a package having pressure sensor including a first substrate having a fixed electrode bonded to a second substrate having a movable electrode disposed at a predetermined interval from the fixed electrode, a support substrate with an opening for storing the second substrate, and a resin layer for fixing the pressure sensor and the support substrate. The pressure sensor may be packaged on the support substrate via the first substrate and a bonding member in a state where the second substrate is fit within the opening. The package for the pressure sensor may be sufficiently thin to be employed for the use on a minimum area.

Abstract translation: 本公开的实施例涉及一种具有压力传感器的封装，所述封装具有第一基板，所述第一基板具有粘合到第二基板的固定电极，所述第二基板具有以与所述固定电极隔开预定间隔设置的可动电极，具有开口的支撑基板， 基板和用于固定压力传感器和支撑基板的树脂层。 压力传感器可以经由第一基板和接合部件在第二基板配合在开口内的状态下被包装在支撑基板上。 用于压力传感器的包装可以足够薄以便在最小面积上使用。