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    Thin film piezoelectric bulk acoustic wave resonator and radio frequency filter using the same
    6.
    发明授权
    Thin film piezoelectric bulk acoustic wave resonator and radio frequency filter using the same 失效
    薄膜压电体声波谐振器和射频滤波器使用相同

    公开(公告)号：US07489063B2

    公开(公告)日：2009-02-10

    申请号：US11627858

    申请日：2007-01-26

    申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

    发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

    IPC分类号： H01L41/08

    CPC分类号： H03H9/02228 ,  H03H3/04 ,  H03H9/173 ,  H03H9/175 ,  H03H9/564 ,  H03H9/568 ,  H03H9/605 ,  H03H2003/0428 ,  H03H2003/0457 ,  H03H2003/0471

    摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0

    摘要翻译： 本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。 另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。 本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same
    8.
    发明申请
    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
    体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块

    公开(公告)号：US20060139122A1

    公开(公告)日：2006-06-29

    申请号：US11067374

    申请日：2005-02-28

    申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    IPC分类号： H03H9/70 ,  H03H9/56 ,  H03H9/58

    CPC分类号： H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/174 ,  H03H9/564 ,  H03H9/706

    摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.

    摘要翻译： 解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件 ，并且提供使用该模块的高频模块。 根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜 膜和覆盖压电膜的第二电极膜。 衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个 气隙在第一表面附近具有锥形形状。

    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same
    9.
    发明授权
    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
    体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块

    公开(公告)号：US07221242B2

    公开(公告)日：2007-05-22

    申请号：US11067374

    申请日：2005-02-28

    申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    IPC分类号： H03H9/00 ,  H01L41/00

    CPC分类号： H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/174 ,  H03H9/564 ,  H03H9/706

    摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.

    摘要翻译： 解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件 ，并且提供使用该模块的高频模块。 根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜 膜和覆盖压电膜的第二电极膜。 衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个 气隙在第一表面附近具有锥形形状。