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    Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator
    3.
    发明申请
    Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator 有权
    薄膜压电振动器，薄膜压电体声波谐振器和使用这种谐振器的射频滤波器

    公开(公告)号：US20080111651A1

    公开(公告)日：2008-05-15

    申请号：US11979905

    申请日：2007-11-09

    申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

    发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

    IPC分类号： H03H9/54 ,  H03H9/17

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  H03H2009/241

    摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

    摘要翻译： 薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。 压电薄膜的至少一部分介于第一和第二金属电极之间。 共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。 谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍， 两个共振部分的宽度的四分之一或更小。

    PIEZOELECTRIC FILM RESONATOR, RADIO-FREQUENCY FILTER USING THEM, AND RADIO-FREQUENCY MODULE USING THEM
    4.
    发明申请
    PIEZOELECTRIC FILM RESONATOR, RADIO-FREQUENCY FILTER USING THEM, AND RADIO-FREQUENCY MODULE USING THEM 审中-公开
    压电薄膜谐振器，使用它们的无线电频率滤波器和使用它们的无线电频率模块

    公开(公告)号：US20070267942A1

    公开(公告)日：2007-11-22

    申请号：US11746955

    申请日：2007-05-10

    申请人： Hisanori MATSUMOTO ,  Atsushi ISOBE

    发明人： Hisanori MATSUMOTO ,  Atsushi ISOBE

    IPC分类号： H03H9/25

    CPC分类号： H03H9/02543 ,  H03H9/02228 ,  H03H9/02637 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H9/178

    摘要： A piezoelectric film resonator for a radio-frequency circuit according to an aspect of the present invention includes a substrate and a multilayer film provided on the substrate. The multilayer film has a stacked structure in which at least two piezoelectric layers and at least three electrode layers disposed with each of the piezoelectric layers therebetween are stacked. At least one of the electrode layers is an electrode layer for excitation. The electrode layer for excitation has a structure in which a plurality of unit patterns as elements of the electrode layer for excitation are disposed periodically along a direction substantially perpendicular to a stacked direction of the stacked structure.

    摘要翻译： 根据本发明的一个方面的用于射频电路的压电膜谐振器包括衬底和设置在衬底上的多层膜。 多层膜具有叠层结构，其中至少两个压电层和至少三个设置在它们之间的压电层之间的电极层被堆叠。 至少一个电极层是用于激发的电极层。 用于激发的电极层具有其中作为用于激发的电极层的元件的多个单元图案沿着与层叠结构的堆叠方向基本垂直的方向周期性地布置的结构。

    Film bulk acoustic wave resonator, its fabrication method and film bulk acoustic wave resonator filter using the resonator
    9.
    发明授权
    Film bulk acoustic wave resonator, its fabrication method and film bulk acoustic wave resonator filter using the resonator 失效
    薄膜体声波谐振器，其制造方法和使用谐振器的薄膜体声波谐振器滤波器

    公开(公告)号：US07986075B2

    公开(公告)日：2011-07-26

    申请号：US12292448

    申请日：2008-11-19

    申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe

    发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe

    IPC分类号： H01L41/08

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/0514 ,  H03H9/132 ,  H03H9/172 ,  H03H2003/021 ,  Y10T29/42

    摘要： The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.

    摘要翻译： 薄膜体声波谐振器包括由压电层构成的叠层结构，以及插入至少部分压电层的第一和第二电极层，其中第一金属电极分散地形成在面向第二金属电极的电极平面上， 并且与层叠结构的共振部相对应地在基板上形成间隙。 除了电连接到第一电极层的线电极的区域和与第二电极层电连接的线电极的区域之外，压电层，第一电极层和第二电极层不与绝缘衬底接触 但是在一个空心处被支撑。 此外，在间隙中形成支撑以支撑层压结构。