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    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same
    5.
    发明申请
    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
    体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块

    公开(公告)号：US20060139122A1

    公开(公告)日：2006-06-29

    申请号：US11067374

    申请日：2005-02-28

    申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    IPC分类号： H03H9/70 ,  H03H9/56 ,  H03H9/58

    CPC分类号： H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/174 ,  H03H9/564 ,  H03H9/706

    摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.

    摘要翻译： 解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件 ，并且提供使用该模块的高频模块。 根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜 膜和覆盖压电膜的第二电极膜。 衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个 气隙在第一表面附近具有锥形形状。

    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same
    6.
    发明授权
    Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
    体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块

    公开(公告)号：US07221242B2

    公开(公告)日：2007-05-22

    申请号：US11067374

    申请日：2005-02-28

    申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe ,  Mitsutaka Hikita

    IPC分类号： H03H9/00 ,  H01L41/00

    CPC分类号： H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/174 ,  H03H9/564 ,  H03H9/706

    摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.

    摘要翻译： 解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件 ，并且提供使用该模块的高频模块。 根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜 膜和覆盖压电膜的第二电极膜。 衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个 气隙在第一表面附近具有锥形形状。

    Thin film bulk acoustic wave resonator and filter, and radio frequency module using them
    8.
    发明授权
    Thin film bulk acoustic wave resonator and filter, and radio frequency module using them 失效
    薄膜体声波谐振器和滤波器，以及使用它们的射频模块

    公开(公告)号：US07554427B2

    公开(公告)日：2009-06-30

    申请号：US11705520

    申请日：2007-02-13

    申请人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

    发明人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

    IPC分类号： H03H9/54 ,  H01L41/047

    CPC分类号： H03H9/0095 ,  H03H3/04 ,  H03H9/583 ,  H03H9/584 ,  H03H9/585 ,  H03H9/588 ,  H03H9/589 ,  H03H9/605

    摘要： A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.

    摘要翻译： 要提供一种薄膜体声波（BAW）谐振器结构和滤波器，其可以通过廉价的制造技术制造并且尺寸比传统的这种产品更小。 BAW谐振器结构和滤波器具有衬底，布置在衬底上的第一BAW谐振器，放置在第一BAW谐振器上的声反射层和放置在声反射层上的第二BAW谐振器，并且声反射层是导电的。 这里，声反射层构成第一电极，并且该第一电极电连接并声学地分离第一BAW谐振器和第二BAW谐振器。

    Thin film bulk acoustic wave resonator structure and filter, and radio-frequency module using them
    9.
    发明申请
    Thin film bulk acoustic wave resonator structure and filter, and radio-frequency module using them 失效
    薄膜体声波谐振器结构和滤波器，以及使用它们的射频模块

    公开(公告)号：US20080169884A1

    公开(公告)日：2008-07-17

    申请号：US11705520

    申请日：2007-02-13

    申请人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

    发明人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

    IPC分类号： H03H9/54

    CPC分类号： H03H9/0095 ,  H03H3/04 ,  H03H9/583 ,  H03H9/584 ,  H03H9/585 ,  H03H9/588 ,  H03H9/589 ,  H03H9/605

    摘要： A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.

    摘要翻译： 要提供一种薄膜体声波（BAW）谐振器结构和滤波器，其可以通过廉价的制造技术制造并且尺寸比传统的这种产品更小。 BAW谐振器结构和滤波器具有衬底，布置在衬底上的第一BAW谐振器，放置在第一BAW谐振器上的声反射层和放置在声反射层上的第二BAW谐振器，并且声反射层是导电的。 这里，声反射层构成第一电极，并且该第一电极电连接并声学地分离第一BAW谐振器和第二BAW谐振器。

    Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator
    10.
    发明授权
    Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator 有权
    薄膜压电振动器，薄膜压电体声波谐振器和使用这种谐振器的射频滤波器

    公开(公告)号：US08164399B2

    公开(公告)日：2012-04-24

    申请号：US13064564

    申请日：2011-03-31

    申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

    发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

    IPC分类号： H03H9/205

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  H03H2009/241

    摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

    摘要翻译： 薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。 压电薄膜的至少一部分介于第一和第二金属电极之间。 共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。 谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍， 两个共振部分的宽度的四分之一或更小。