公开(公告)号：US09099180B2

公开(公告)日：2015-08-04

申请号：US13599301

申请日：2012-08-30

申请人： Yoichi Minemura ,  Takayuki Tsukamoto ,  Takafumi Shimotori ,  Hiroshi Kanno ,  Tomonori Kurosawa ,  Mizuki Kaneko

发明人： Yoichi Minemura ,  Takayuki Tsukamoto ,  Takafumi Shimotori ,  Hiroshi Kanno ,  Tomonori Kurosawa ,  Mizuki Kaneko

IPC分类号： G11C11/00 ,  G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/72

摘要： According to one embodiment, a semiconductor memory device includes a plurality of cell array blocks and a control circuit. The control circuit sets a selected bit line to have 0 volt, applies a first electric potential which is higher than 0 volt to a selected word line, applies a second electric potential which is higher than 0 volt and lower than the first electric potential to non-selected word lines other than the selected word line, applies a third electric potential which is 0 volt or more and lower than the second electric potential to a non-selected bit line adjacent to the selected bit line in an adjacent cell array block, applies the second electric potential to non-selected bit lines other than the non-selected bit line to which the third electric potential is applied, and changes a resistance status of the resistance variable film of the selected memory cell.

摘要翻译： 根据一个实施例，半导体存储器件包括多个单元阵列块和控制电路。 控制电路将所选择的位线设置为具有0伏特，对所选择的字线施加高于0伏的第一电位，将比第一电位高于0伏且低于第一电位的第二电位施加到非 - 除了所选字线以外的选定字线，将相邻单元阵列块中与选定位线相邻的未选位线施加0伏以上且低于第2电位的第3电位， 对除了施加了第三电位的未选位线之外的非选择位线的第二电位，并且改变所选存储单元的电阻变化膜的电阻状态。

公开(公告)号：US08837199B2

公开(公告)日：2014-09-16

申请号：US13599265

申请日：2012-08-30

申请人： Hiroshi Kanno ,  Yoichi Minemura ,  Mizuki Kaneko ,  Tomonori Kurosawa ,  Takafumi Shimotori ,  Takayuki Tsukamoto

发明人： Hiroshi Kanno ,  Yoichi Minemura ,  Mizuki Kaneko ,  Tomonori Kurosawa ,  Takafumi Shimotori ,  Takayuki Tsukamoto

IPC分类号： G11C11/00 ,  G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/72

摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of memory cells, a plurality of wires, and a control circuit. The control circuit allows a first current to change a state to flow on a selected cell by applying a first potential difference between a pair of wires that sandwich the selected cell selected from the plurality of memory cells with respect to the semiconductor substrate vertically, and allows a second current lower than the first current to flow on an non-selected cell in the same direction as the direction of the first current by applying a second potential difference between a pair of wires that sandwich the non-selected cell connected to a wire shared with the selected cell on a different layer from the selected cell.

摘要翻译： 根据一个实施例，半导体存储器件包括半导体衬底，多个存储单元，多根导线和控制电路。 控制电路允许第一电流通过在相对于半导体衬底垂直地夹持从多个存储单元中选择的所选择的单元的一对导线之间施加第一电位差来改变选定单元上的状态，并允许 低于第一电流的第二电流，在与所述第一电流的方向相同的方向上在未选择的单元上流动，通过在连接到共享的线的未选择的单元之间施加一对导线之间的第二电位差 所选单元格与选定单元格不同的图层。

公开(公告)号：US20130229853A1

公开(公告)日：2013-09-05

申请号：US13599301

申请日：2012-08-30

申请人： Yoichi MINEMURA ,  Takayuki Tsukamoto ,  Takafumi Shimotori ,  Hiroshi Kanno ,  Tomonori Kurosawa ,  Mizuki Kaneko

发明人： Yoichi MINEMURA ,  Takayuki Tsukamoto ,  Takafumi Shimotori ,  Hiroshi Kanno ,  Tomonori Kurosawa ,  Mizuki Kaneko

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/72

摘要： According to one embodiment, a semiconductor memory device includes a plurality of cell array blocks and a control circuit. The control circuit sets a selected bit line to have 0 volt, applies a first electric potential which is higher than 0 volt to a selected word line, applies a second electric potential which is higher than 0 volt and lower than the first electric potential to non-selected word lines other than the selected word line, applies a third electric potential which is 0 volt or more and lower than the second electric potential to a non-selected bit line adjacent to the selected bit line in an adjacent cell array block, applies the second electric potential to non-selected bit lines other than the non-selected bit line to which the third electric potential is applied, and changes a resistance status of the resistance variable film of the selected memory cell.

摘要翻译： 根据一个实施例，半导体存储器件包括多个单元阵列块和控制电路。 控制电路将所选择的位线设置为具有0伏特，对所选择的字线施加高于0伏的第一电位，将比第一电位高于0伏且低于第一电位的第二电位施加到非 - 除了所选字线以外的选定字线，将相邻单元阵列块中与选定位线相邻的未选位线施加0伏以上且低于第2电位的第3电位， 对除了施加了第三电位的未选位线之外的非选择位线的第二电位，并且改变所选存储单元的电阻变化膜的电阻状态。

公开(公告)号：US20130229851A1

公开(公告)日：2013-09-05

申请号：US13597814

申请日：2012-08-29

申请人： Tomonori KUROSAWA ,  Mizuki Kaneko ,  Takafumi Shimotori ,  Takayuki Tsukamoto ,  Yoichi Minemura ,  Hiroshi Kanno

发明人： Tomonori KUROSAWA ,  Mizuki Kaneko ,  Takafumi Shimotori ,  Takayuki Tsukamoto ,  Yoichi Minemura ,  Hiroshi Kanno

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0083 ,  G11C2213/72

摘要： In a memory cell array, memory cells each including a variable resistance element are arranged at crossing portions between a plurality of first wiring and a plurality of second wirings. A control circuit executes a set operation, a reset operation, and a training operation. In the set operation, a set pulse is applied to the variable resistance element to change the variable resistance element from a high resistance state to a low resistance state. In the reset operation, a reset pulse having an opposite polarity to the polarity of the set pulse is applied to the variable resistance element to change the variable resistance element from the low resistance state to the high resistance state. In the training operation, the set pulse and the reset pulse are continuously applied to the variable resistance element.

摘要翻译： 在存储单元阵列中，包括可变电阻元件的存储单元布置在多个第一布线和多个第二布线之间的交叉部分处。 控制电路执行设定操作，复位操作和训练操作。 在设定动作中，向可变电阻元件施加设定脉冲，将可变电阻元件从高电阻状态变为低电阻状态。 在复位操作中，将具有与设定脉冲的极性相反的极性的复位脉冲施加到可变电阻元件，以将可变电阻元件从低电阻状态改变为高电阻状态。 在训练操作中，将设定脉冲和复位脉冲连续施加到可变电阻元件。

公开(公告)号：US09076525B2

公开(公告)日：2015-07-07

申请号：US13597773

申请日：2012-08-29

申请人： Mizuki Kaneko ,  Tomonori Kurosawa ,  Yoichi Minemura ,  Hiroshi Kanno ,  Takafumi Shimotori ,  Takayuki Tsukamoto

发明人： Mizuki Kaneko ,  Tomonori Kurosawa ,  Yoichi Minemura ,  Hiroshi Kanno ,  Takafumi Shimotori ,  Takayuki Tsukamoto

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C2213/72

摘要： A semiconductor storage device includes a memory cell array, and a control circuit. The memory cell array has memory cells including variable resistive elements disposed at intersections of a plurality of first lines and a plurality of second lines. The control circuit performs a set pulse applying operation, and a cure pulse applying operation. The set pulse applying operation applies a set pulse to a variable resistive element so as to cause the variable resistive element to transition from a high resistance state to a low resistance state. The cure pulse applying operation applies a cure pulse to the variable resistive element. The cure pulse has a polarity that is opposite of a polarity of the set pulse, and is larger than the set pulse.

摘要翻译： 半导体存储装置包括存储单元阵列和控制电路。 存储单元阵列具有包括设置在多个第一线和多条第二线的交叉处的可变电阻元件的存储单元。 控制电路执行设定脉冲施加操作和固化脉冲施加操作。 设置脉冲施加操作将设定脉冲施加到可变电阻元件，以使可变电阻元件从高电阻状态转变到低电阻状态。 固化脉冲施加操作对可变电阻元件施加固化脉冲。 固化脉冲具有与设定脉冲的极性相反的极性，并且大于设定脉冲。

公开(公告)号：US08861265B2

公开(公告)日：2014-10-14

申请号：US13597814

申请日：2012-08-29

申请人： Tomonori Kurosawa ,  Mizuki Kaneko ,  Takafumi Shimotori ,  Takayuki Tsukamoto ,  Yoichi Minemura ,  Hiroshi Kanno

发明人： Tomonori Kurosawa ,  Mizuki Kaneko ,  Takafumi Shimotori ,  Takayuki Tsukamoto ,  Yoichi Minemura ,  Hiroshi Kanno

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0083 ,  G11C2213/72

摘要： In a memory cell array, memory cells each including a variable resistance element are arranged at crossing portions between a plurality of first wiring and a plurality of second wirings. A control circuit executes a set operation, a reset operation, and a training operation. In the set operation, a set pulse is applied to the variable resistance element to change the variable resistance element from a high resistance state to a low resistance state. In the reset operation, a reset pulse having an opposite polarity to the polarity of the set pulse is applied to the variable resistance element to change the variable resistance element from the low resistance state to the high resistance state. In the training operation, the set pulse and the reset pulse are continuously applied to the variable resistance element.

摘要翻译： 在存储单元阵列中，包括可变电阻元件的存储单元布置在多个第一布线和多个第二布线之间的交叉部分处。 控制电路执行设定操作，复位操作和训练操作。 在设定动作中，向可变电阻元件施加设定脉冲，将可变电阻元件从高电阻状态变为低电阻状态。 在复位操作中，将具有与设定脉冲的极性相反的极性的复位脉冲施加到可变电阻元件，以将可变电阻元件从低电阻状态改变为高电阻状态。 在训练操作中，将设定脉冲和复位脉冲连续施加到可变电阻元件。

公开(公告)号：US20130229852A1

公开(公告)日：2013-09-05

申请号：US13599265

申请日：2012-08-30

申请人： Hiroshi KANNO ,  Yoichi Minemura ,  Mizuki Kaneko ,  Tomonori Kurosawa ,  Takafumi Shimotori ,  Takayuki Tsukamoto

发明人： Hiroshi KANNO ,  Yoichi Minemura ,  Mizuki Kaneko ,  Tomonori Kurosawa ,  Takafumi Shimotori ,  Takayuki Tsukamoto

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/72

摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of memory cells, a plurality of wires, and a control circuit. The control circuit allows a first current to change a state to flow on a selected cell by applying a first potential difference between a pair of wires that sandwich the selected cell selected from the plurality of memory cells with respect to the semiconductor substrate vertically, and allows a second current lower than the first current to flow on an non-selected cell in the same direction as the direction of the first current by applying a second potential difference between a pair of wires that sandwich the non-selected cell connected to a wire shared with the selected cell on a different layer from the selected cell.

摘要翻译： 根据一个实施例，半导体存储器件包括半导体衬底，多个存储单元，多根导线和控制电路。 控制电路允许第一电流通过在相对于半导体衬底垂直地夹持从多个存储单元中选择的所选择的单元的一对导线之间施加第一电位差来改变选定单元上的状态，并允许 低于第一电流的第二电流，在与所述第一电流的方向相同的方向上在未选择的单元上流动，通过在连接到共享的线的未选择的单元之间施加一对导线之间的第二电位差 所选单元格与选定单元格不同的图层。

公开(公告)号：US20130229850A1

公开(公告)日：2013-09-05

申请号：US13597773

申请日：2012-08-29

申请人： Mizuki Kaneko ,  Tomonori Kurosawa ,  Yoichi Minemura ,  Hiroshi Kanno ,  Takafumi Shimotori ,  Takayuki Tsukamoto

发明人： Mizuki Kaneko ,  Tomonori Kurosawa ,  Yoichi Minemura ,  Hiroshi Kanno ,  Takafumi Shimotori ,  Takayuki Tsukamoto

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C2213/72

摘要： A semiconductor storage device includes a memory cell array, and a control circuit. The memory cell array has memory cells including variable resistive elements disposed at intersections of a plurality of first lines and a plurality of second lines. The control circuit performs a set pulse applying operation, and a cure pulse applying operation. The set pulse applying operation applies a set pulse to a variable resistive element so as to cause the variable resistive element to transition from a high resistance state to a low resistance state. The cure pulse applying operation applies a cure pulse to the variable resistive element. The cure pulse has a polarity that is opposite of a polarity of the set pulse, and is larger than the set pulse.

摘要翻译： 半导体存储装置包括存储单元阵列和控制电路。 存储单元阵列具有包括设置在多个第一线和多条第二线的交叉处的可变电阻元件的存储单元。 控制电路执行设定脉冲施加操作和固化脉冲施加操作。 设置脉冲施加操作将设定脉冲施加到可变电阻元件，以使可变电阻元件从高电阻状态转变到低电阻状态。 固化脉冲施加操作对可变电阻元件施加固化脉冲。 固化脉冲具有与设定脉冲的极性相反的极性，并且大于设定脉冲。

公开(公告)号：US08750017B2

公开(公告)日：2014-06-10

申请号：US13358677

申请日：2012-01-26

申请人： Mizuki Kaneko ,  Tomoki Higashi ,  Tomonori Kurosawa

发明人： Mizuki Kaneko ,  Tomoki Higashi ,  Tomonori Kurosawa

IPC分类号： G11C11/00

CPC分类号： G11C8/10 ,  G11C8/08 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0023 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/71 ,  G11C2213/72

摘要： According to one embodiment, a resistance-change memory includes bit lines, word lines, a memory cell array including memory cells arranged at intersections between the bit lines and the word lines, each of the memory cells including a variable-resistance element and a diode, a control circuit configured to apply a reverse bias to the diode, and to write data to a selected memory cell, and a current limiting circuit configured to limit a current flowing to the selected memory cell in a write. The current limiting circuit controls the current flowing to the selected memory cell not to exceed a second compliance current obtained by adding a leakage current from an unselected memory cell to a predetermined first compliance current.

摘要翻译： 根据一个实施例，电阻变化存储器包括位线，字线，包括布置在位线和字线之间的交叉处的存储单元的存储单元阵列，每个存储单元包括可变电阻元件和二极管 配置为向二极管施加反向偏置并将数据写入所选择的存储单元的控制电路，以及配置为限制在写入中流向所选存储单元的电流的限流电路。 电流限制电路控制流向所选存储单元的电流不超过通过将未选择的存储单元的泄漏电流加到预定的第一顺应电流而获得的第二顺从电流。

公开(公告)号：US20120243294A1

公开(公告)日：2012-09-27

申请号：US13358677

申请日：2012-01-26

申请人： Mizuki Kaneko ,  Tomoki Higashi ,  Tomonori Kurosawa

发明人： Mizuki Kaneko ,  Tomoki Higashi ,  Tomonori Kurosawa

IPC分类号： G11C11/00

CPC分类号： G11C8/10 ,  G11C8/08 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0023 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/71 ,  G11C2213/72

摘要： According to one embodiment, a resistance-change memory includes bit lines, word lines, a memory cell array including memory cells arranged at intersections between the bit lines and the word lines, each of the memory cells including a variable-resistance element and a diode, a control circuit configured to apply a reverse bias to the diode, and to write data to a selected memory cell, and a current limiting circuit configured to limit a current flowing to the selected memory cell in a write. The current limiting circuit controls the current flowing to the selected memory cell not to exceed a second compliance current obtained by adding a leakage current from an unselected memory cell to a predetermined first compliance current.

摘要翻译： 根据一个实施例，电阻变化存储器包括位线，字线，包括布置在位线和字线之间的交叉处的存储单元的存储单元阵列，每个存储单元包括可变电阻元件和二极管 配置为向二极管施加反向偏置并将数据写入所选择的存储单元的控制电路，以及配置为限制在写入中流向所选存储单元的电流的限流电路。 电流限制电路控制流向所选存储单元的电流不超过通过将未选择的存储单元的泄漏电流加到预定的第一顺应电流而获得的第二顺从电流。