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    Method of forming a via hole through a glass wafer
    1.
    发明授权
    Method of forming a via hole through a glass wafer 有权
    通过玻璃晶片形成通孔的方法

    公开(公告)号：US07084073B2

    公开(公告)日：2006-08-01

    申请号：US10681217

    申请日：2003-10-09

    申请人： Moon-chul Lee ,  Hyung Choi ,  Kyu-dong Jung ,  Mi Jang ,  Seog-woo Hong ,  Seok-whan Chung ,  Chan-bong Jun ,  Seok-jin Kang

    发明人： Moon-chul Lee ,  Hyung Choi ,  Kyu-dong Jung ,  Mi Jang ,  Seog-woo Hong ,  Seok-whan Chung ,  Chan-bong Jun ,  Seok-jin Kang

    IPC分类号： H01L21/302

    CPC分类号： B81C1/00087 ,  H01L21/486 ,  H01L23/13 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer, forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole, eliminating any remaining patterning material used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole is etched to form a via hole having a smooth surface and extending through the glass wafer, and eliminating the material layer. The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.

    摘要翻译： 通过玻璃晶片形成通孔的方法包括在玻璃晶片的外表面上沉积材料层，该材料层的选择比率高于玻璃晶片的选择比，在玻璃晶片的一侧上形成通孔图案部分 所述材料层进行蚀刻所述通路图案部分以形成预备通孔的第一蚀刻，消除在形成所述通路图案部分中使用的剩余图案材料，进行第二蚀刻，其中所述预通孔 被蚀刻以形成具有光滑表面并延伸穿过玻璃晶片的通孔，并且消除材料层。 根据本发明的方法能够通过玻璃晶片形成通孔，而不会形成底切或微小的裂缝，从而提高MEMS元件的成品率和可靠性。

    Method and apparatus for vacuum-mounting a micro electro mechanical system on a substrate
    2.
    发明授权
    Method and apparatus for vacuum-mounting a micro electro mechanical system on a substrate 失效
    将微机电系统真空安装在基板上的方法和装置

    公开(公告)号：US07172916B2

    公开(公告)日：2007-02-06

    申请号：US10701552

    申请日：2003-11-06

    申请人： Kyu-dong Jung ,  Chan-Bong Jun ,  Hyung Choi ,  Seok-jin Kang ,  Seog-woo Hong ,  Seok-whan Chung ,  Moon-chul Lee ,  Eun-sung Lee

    发明人： Kyu-dong Jung ,  Chan-Bong Jun ,  Hyung Choi ,  Seok-jin Kang ,  Seog-woo Hong ,  Seok-whan Chung ,  Moon-chul Lee ,  Eun-sung Lee

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00285

    摘要： A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.

    摘要翻译： 用于真空安装至少一个微机电系统（MEMS）在基板上的方法和装置包括用于将惰性气体注入真空室的气体注入部分; 用于对准半导体衬底和盖的衬底对准部分，所述盖具有形成在其中的空腔和附着到腔的内表面的吸气剂; 用于将半导体衬底和盖结合在一起的接合部分; 以及控制部分，用于控制衬底对准部分以对准半导体和盖子，用于控制气体注入部分以将惰性气体注入真空室中，并且用于控制接合部分将半导体衬底和盖子结合在一起，之后 注入惰性气体。

    MICRO-ELECTRO MECHANICAL SYSTEM DEVICE AND METHOD OF FORMING COMB ELECTRODES OF THE SAME
    3.
    发明申请
    MICRO-ELECTRO MECHANICAL SYSTEM DEVICE AND METHOD OF FORMING COMB ELECTRODES OF THE SAME 审中-公开
    微电子机械系统装置及其组合电极的形成方法

    公开(公告)号：US20070284964A1

    公开(公告)日：2007-12-13

    申请号：US11754414

    申请日：2007-05-29

    申请人： Seok-whan Chung ,  Seok-jin Kang ,  Hyung Choi ,  Hyun-ku Jeong

    发明人： Seok-whan Chung ,  Seok-jin Kang ,  Hyung Choi ,  Hyun-ku Jeong

    IPC分类号： H01G9/00 ,  H02N1/00

    CPC分类号： G02B26/0841 ,  B81B3/0086 ,  B81B2203/0136 ,  B81C1/00698

    摘要： A micro-electro mechanical system (MEMS) device and a method of forming comb electrodes of the MEMS device are provided. The method includes forming a plurality of parallel trenches at regular intervals in one side of a first silicon substrate so as to define alternating first and second regions at different heights on the one side of the first silicon substrate, oxidizing the first silicon substrate in order to form an oxide layer in the first and second regions having different heights, forming a polysilicon layer on the oxide layer to at least fill up the trenches so as to level the oxide layer having different heights, bonding a second silicon substrate directly to a top surface of the polysilicon layer, selectively etching the second silicon substrate and the polysilicon layer using a first mask so as to form upper comb electrodes vertically aligned with the first regions, selectively etching the first silicon substrate using a second mask so as to form lower comb electrodes vertically aligned with the second regions, and removing the oxide layer interposed between the upper comb electrodes and the lower comb electrodes.

    摘要翻译： 提供了微电子机械系统（MEMS）装置和形成MEMS装置的梳状电极的方法。 该方法包括在第一硅衬底的一侧中以规则的间隔形成多个平行的沟槽，以便在第一硅衬底的一侧上限定不同高度的交替的第一和第二区域，氧化第一硅衬底，以便 在具有不同高度的第一和第二区域中形成氧化物层，在氧化物层上形成多晶硅层以至少填充沟槽，以使具有不同高度的氧化物层平坦化，将第二硅衬底直接接合到顶表面 使用第一掩模选择性地蚀刻第二硅衬底和多晶硅层，以形成与第一区域垂直对准的上梳状电极，使用第二掩模选择性地蚀刻第一硅衬底，从而形成下梳状电极 与第二区域垂直对准，以及去除介于上梳状电极和上梳状电极之间的氧化物层 下梳电极。

    Method for gyroscope using SMS wafer and gyroscope fabricated by the same
    5.
    发明申请
    Method for gyroscope using SMS wafer and gyroscope fabricated by the same 有权
    使用SMS晶圆和陀螺仪制作的陀螺仪的方法

    公开(公告)号：US20050132798A1

    公开(公告)日：2005-06-23

    申请号：US11002241

    申请日：2004-12-03

    申请人： Moon-chul Lee ,  Hyung Choi ,  Seok-jin Kang

    发明人： Moon-chul Lee ,  Hyung Choi ,  Seok-jin Kang

    IPC分类号： G01C19/56 ,  B81B3/00 ,  B81C1/00 ,  G01C19/5783 ,  H01R13/52 ,  G01P15/14

    CPC分类号： G01C19/5769 ,  B81B3/0035 ,  B81B2201/0242 ,  B81C1/00579 ,  B81C1/0092 ,  B81C1/00936 ,  H01R13/52 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4902 ,  Y10T74/12 ,  Y10T74/1229

    摘要： Method for fabricating a gyroscope including: fabricating a SMS wafer where a first wafer, a metal film, and a second wafer are sequentially stacked; forming a cantilever or a bridge shaped-structure on the relevant portion of the first wafer through the photolithography process; attaching to the surface of the first wafer, a first cap made of glass and having a predetermined space for sealing the movable structure in a vacuum state; separating and removing the metal film and the second wafer from the first wafer; and attaching to the backside of the first wafer, the second cap which is structurally and materially symmetric to the first cap. The SMS wafer is fabricated by depositing the metal film on the second wafer and bonding the first wafer on the metal film using metal paste or material of polymer series. With lower material costs, improvements in performance and characteristics can be achieved.

    摘要翻译： 制造陀螺仪的方法，包括：制造顺序堆叠第一晶片，金属膜和第二晶片的SMS晶片; 通过光刻工艺在第一晶片的相关部分上形成悬臂或桥形结构; 附接到第一晶片的表面，由玻璃制成的第一盖，并且具有用于在真空状态下密封可移动结构的预定空间; 从第一晶片分离和去除金属膜和第二晶片; 并且附接到所述第一晶片的所述背面，所述第二盖在所述第一盖结构和物理上对称。 通过在第二晶片上沉积金属膜并使用金属浆料或聚合物系列材料将第一晶片接合在金属膜上来制造SMS晶片。 随着材料成本的降低，可以实现性能和特性的提高。

    Method for fabricating a gyroscope
    6.
    发明授权
    Method for fabricating a gyroscope 有权
    制造陀螺仪的方法

    公开(公告)号：US07225524B2

    公开(公告)日：2007-06-05

    申请号：US11002241

    申请日：2004-12-03

    申请人： Moon-chul Lee ,  Hyung Choi ,  Seok-jin Kang

    发明人： Moon-chul Lee ,  Hyung Choi ,  Seok-jin Kang

    IPC分类号： H04R31/00

    CPC分类号： G01C19/5769 ,  B81B3/0035 ,  B81B2201/0242 ,  B81C1/00579 ,  B81C1/0092 ,  B81C1/00936 ,  H01R13/52 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4902 ,  Y10T74/12 ,  Y10T74/1229

    摘要： Method for fabricating a gyroscope including: fabricating a SMS wafer where a first wafer, a metal film, and a second wafer are sequentially stacked; forming a cantilever or a bridge shaped-structure on the relevant portion of the first wafer through the photolithography process; attaching to the surface of the first wafer, a first cap made of glass and having a predetermined space for sealing the movable structure in a vacuum state; separating and removing the metal film and the second wafer from the first wafer; and attaching to the backside of the first wafer, the second cap which is structurally and materially symmetric to the first cap. The SMS wafer is fabricated by depositing the metal film on the second wafer and bonding the first wafer on the metal film using metal paste or material of polymer series. With lower material costs, improvements in performance and characteristics can be achieved.

    摘要翻译： 制造陀螺仪的方法，包括：制造顺序堆叠第一晶片，金属膜和第二晶片的SMS晶片; 通过光刻工艺在第一晶片的相关部分上形成悬臂或桥形结构; 附接到第一晶片的表面，由玻璃制成的第一盖，并且具有用于在真空状态下密封可移动结构的预定空间; 从第一晶片分离和去除金属膜和第二晶片; 并且附接到所述第一晶片的所述背面，所述第二盖在所述第一盖结构和物理上对称。 通过在第二晶片上沉积金属膜并使用金属浆料或聚合物系列材料将第一晶片接合在金属膜上来制造SMS晶片。 随着材料成本的降低，可以实现性能和特性的提高。

    Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same
    7.
    发明授权
    Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same 有权
    绝缘体上硅衬底及其制造方法以及使用其制造浮动结构的方法

    公开(公告)号：US07208800B2

    公开(公告)日：2007-04-24

    申请号：US11242824

    申请日：2005-10-05

    申请人： Seok-whan Chung ,  Hyung Choi

    发明人： Seok-whan Chung ,  Hyung Choi

    IPC分类号： H01L21/84 ,  H01L27/12

    CPC分类号： B81C1/00579 ,  B81C2201/0132

    摘要： A silicon-on-insulator (SOI) substrate including laminated layers of a substrate, an oxide layer, and a silicon layer in order. The oxide layer has an electrifying hole fluidly connected with the substrate and the electrifying hole is filled with a part of the silicon layer. A method for fabricating the floating structure is also disclosed which includes the steps of forming an oxide layer having a predetermined thickness on a substrate, forming one or more electrifying holes in an area of the oxide layer corresponding to an inner part of the floating structure, forming a silicon layer on the oxide layer including an electrification structure electrically connecting the silicon layer to the substrate, forming a pattern for the floating structure on the silicon layer, removing the oxide layer corresponding to an inner area of the pattern, forming a thermal oxide layer on a surface of the silicon layer, and removing the thermal oxide layer to form the floating structure.

    摘要翻译： 一种绝缘体上硅（SOI）衬底，包括衬底，氧化物层和硅层的叠层。 氧化物层具有与基板流体连接的带电孔，并且充电孔填充有硅层的一部分。 还公开了一种用于制造浮动结构的方法，其包括在衬底上形成具有预定厚度的氧化物层的步骤，在与浮动结构的内部对应的氧化物层的区域中形成一个或多个通电孔， 在所述氧化物层上形成硅层，所述硅层包括将所述硅层电连接到所述衬底的带电结构，在所述硅层上形成所述浮动结构的图案，除去与所述图案的内部区域对应的所述氧化物层，形成热氧化物 层，并且去除热氧化物层以形成浮动结构。

    Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same
    9.
    发明申请
    Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same 有权
    绝缘体上硅衬底及其制造方法以及使用其制造浮动结构的方法

    公开(公告)号：US20060081929A1

    公开(公告)日：2006-04-20

    申请号：US11242824

    申请日：2005-10-05

    申请人： Seok-whan Chung ,  Hyung Choi

    发明人： Seok-whan Chung ,  Hyung Choi

    IPC分类号： H01L21/84 ,  H01L27/12

    CPC分类号： B81C1/00579 ,  B81C2201/0132

    摘要： A silicon-on-insulator (SOI) substrate including laminated layers of a substrate, an oxide layer, and a silicon layer in order. The oxide layer has an electrifying hole fluidly connected with the substrate and the electrifying hole is filled with a part of the silicon layer. A method for fabricating the floating structure is also disclosed which includes the steps of forming an oxide layer having a predetermined thickness on a substrate, forming one or more electrifying holes in an area of the oxide layer corresponding to an inner part of the floating structure, forming a silicon layer on the oxide layer including an electrification structure electrically connecting the silicon layer to the substrate, forming a pattern for the floating structure on the silicon layer, removing the oxide layer corresponding to an inner area of the pattern, forming a thermal oxide layer on a surface of the silicon layer, and removing the thermal oxide layer to form the floating structure.

    摘要翻译： 一种绝缘体上硅（SOI）衬底，包括衬底，氧化物层和硅层的叠层。 氧化物层具有与基板流体连接的带电孔，并且充电孔填充有硅层的一部分。 还公开了一种用于制造浮动结构的方法，其包括在衬底上形成具有预定厚度的氧化物层的步骤，在与浮动结构的内部对应的氧化物层的区域中形成一个或多个通电孔， 在所述氧化物层上形成硅层，所述硅层包括将所述硅层电连接到所述衬底的带电结构，在所述硅层上形成所述浮动结构的图案，除去与所述图案的内部区域对应的所述氧化物层，形成热氧化物 层，并且去除热氧化物层以形成浮动结构。