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    Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same
    3.
    发明申请
    Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same 有权
    绝缘体上硅衬底及其制造方法以及使用其制造浮动结构的方法

    公开(公告)号：US20060081929A1

    公开(公告)日：2006-04-20

    申请号：US11242824

    申请日：2005-10-05

    申请人： Seok-whan Chung ,  Hyung Choi

    发明人： Seok-whan Chung ,  Hyung Choi

    IPC分类号： H01L21/84 ,  H01L27/12

    CPC分类号： B81C1/00579 ,  B81C2201/0132

    摘要： A silicon-on-insulator (SOI) substrate including laminated layers of a substrate, an oxide layer, and a silicon layer in order. The oxide layer has an electrifying hole fluidly connected with the substrate and the electrifying hole is filled with a part of the silicon layer. A method for fabricating the floating structure is also disclosed which includes the steps of forming an oxide layer having a predetermined thickness on a substrate, forming one or more electrifying holes in an area of the oxide layer corresponding to an inner part of the floating structure, forming a silicon layer on the oxide layer including an electrification structure electrically connecting the silicon layer to the substrate, forming a pattern for the floating structure on the silicon layer, removing the oxide layer corresponding to an inner area of the pattern, forming a thermal oxide layer on a surface of the silicon layer, and removing the thermal oxide layer to form the floating structure.

    摘要翻译： 一种绝缘体上硅（SOI）衬底，包括衬底，氧化物层和硅层的叠层。 氧化物层具有与基板流体连接的带电孔，并且充电孔填充有硅层的一部分。 还公开了一种用于制造浮动结构的方法，其包括在衬底上形成具有预定厚度的氧化物层的步骤，在与浮动结构的内部对应的氧化物层的区域中形成一个或多个通电孔， 在所述氧化物层上形成硅层，所述硅层包括将所述硅层电连接到所述衬底的带电结构，在所述硅层上形成所述浮动结构的图案，除去与所述图案的内部区域对应的所述氧化物层，形成热氧化物 层，并且去除热氧化物层以形成浮动结构。

    MICRO-ELECTRO MECHANICAL SYSTEM DEVICE AND METHOD OF FORMING COMB ELECTRODES OF THE SAME
    4.
    发明申请
    MICRO-ELECTRO MECHANICAL SYSTEM DEVICE AND METHOD OF FORMING COMB ELECTRODES OF THE SAME 审中-公开
    微电子机械系统装置及其组合电极的形成方法

    公开(公告)号：US20070284964A1

    公开(公告)日：2007-12-13

    申请号：US11754414

    申请日：2007-05-29

    申请人： Seok-whan Chung ,  Seok-jin Kang ,  Hyung Choi ,  Hyun-ku Jeong

    发明人： Seok-whan Chung ,  Seok-jin Kang ,  Hyung Choi ,  Hyun-ku Jeong

    IPC分类号： H01G9/00 ,  H02N1/00

    CPC分类号： G02B26/0841 ,  B81B3/0086 ,  B81B2203/0136 ,  B81C1/00698

    摘要： A micro-electro mechanical system (MEMS) device and a method of forming comb electrodes of the MEMS device are provided. The method includes forming a plurality of parallel trenches at regular intervals in one side of a first silicon substrate so as to define alternating first and second regions at different heights on the one side of the first silicon substrate, oxidizing the first silicon substrate in order to form an oxide layer in the first and second regions having different heights, forming a polysilicon layer on the oxide layer to at least fill up the trenches so as to level the oxide layer having different heights, bonding a second silicon substrate directly to a top surface of the polysilicon layer, selectively etching the second silicon substrate and the polysilicon layer using a first mask so as to form upper comb electrodes vertically aligned with the first regions, selectively etching the first silicon substrate using a second mask so as to form lower comb electrodes vertically aligned with the second regions, and removing the oxide layer interposed between the upper comb electrodes and the lower comb electrodes.

    摘要翻译： 提供了微电子机械系统（MEMS）装置和形成MEMS装置的梳状电极的方法。 该方法包括在第一硅衬底的一侧中以规则的间隔形成多个平行的沟槽，以便在第一硅衬底的一侧上限定不同高度的交替的第一和第二区域，氧化第一硅衬底，以便 在具有不同高度的第一和第二区域中形成氧化物层，在氧化物层上形成多晶硅层以至少填充沟槽，以使具有不同高度的氧化物层平坦化，将第二硅衬底直接接合到顶表面 使用第一掩模选择性地蚀刻第二硅衬底和多晶硅层，以形成与第一区域垂直对准的上梳状电极，使用第二掩模选择性地蚀刻第一硅衬底，从而形成下梳状电极 与第二区域垂直对准，以及去除介于上梳状电极和上梳状电极之间的氧化物层 下梳电极。

    Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same
    5.
    发明授权
    Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same 有权
    绝缘体上硅衬底及其制造方法以及使用其制造浮动结构的方法

    公开(公告)号：US07208800B2

    公开(公告)日：2007-04-24

    申请号：US11242824

    申请日：2005-10-05

    申请人： Seok-whan Chung ,  Hyung Choi

    发明人： Seok-whan Chung ,  Hyung Choi

    IPC分类号： H01L21/84 ,  H01L27/12

    CPC分类号： B81C1/00579 ,  B81C2201/0132

    摘要： A silicon-on-insulator (SOI) substrate including laminated layers of a substrate, an oxide layer, and a silicon layer in order. The oxide layer has an electrifying hole fluidly connected with the substrate and the electrifying hole is filled with a part of the silicon layer. A method for fabricating the floating structure is also disclosed which includes the steps of forming an oxide layer having a predetermined thickness on a substrate, forming one or more electrifying holes in an area of the oxide layer corresponding to an inner part of the floating structure, forming a silicon layer on the oxide layer including an electrification structure electrically connecting the silicon layer to the substrate, forming a pattern for the floating structure on the silicon layer, removing the oxide layer corresponding to an inner area of the pattern, forming a thermal oxide layer on a surface of the silicon layer, and removing the thermal oxide layer to form the floating structure.

    摘要翻译： 一种绝缘体上硅（SOI）衬底，包括衬底，氧化物层和硅层的叠层。 氧化物层具有与基板流体连接的带电孔，并且充电孔填充有硅层的一部分。 还公开了一种用于制造浮动结构的方法，其包括在衬底上形成具有预定厚度的氧化物层的步骤，在与浮动结构的内部对应的氧化物层的区域中形成一个或多个通电孔， 在所述氧化物层上形成硅层，所述硅层包括将所述硅层电连接到所述衬底的带电结构，在所述硅层上形成所述浮动结构的图案，除去与所述图案的内部区域对应的所述氧化物层，形成热氧化物 层，并且去除热氧化物层以形成浮动结构。

    Method of forming a via hole through a glass wafer
    6.
    发明授权
    Method of forming a via hole through a glass wafer 有权
    通过玻璃晶片形成通孔的方法

    公开(公告)号：US07084073B2

    公开(公告)日：2006-08-01

    申请号：US10681217

    申请日：2003-10-09

    申请人： Moon-chul Lee ,  Hyung Choi ,  Kyu-dong Jung ,  Mi Jang ,  Seog-woo Hong ,  Seok-whan Chung ,  Chan-bong Jun ,  Seok-jin Kang

    发明人： Moon-chul Lee ,  Hyung Choi ,  Kyu-dong Jung ,  Mi Jang ,  Seog-woo Hong ,  Seok-whan Chung ,  Chan-bong Jun ,  Seok-jin Kang

    IPC分类号： H01L21/302

    CPC分类号： B81C1/00087 ,  H01L21/486 ,  H01L23/13 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer, forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole, eliminating any remaining patterning material used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole is etched to form a via hole having a smooth surface and extending through the glass wafer, and eliminating the material layer. The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.

    摘要翻译： 通过玻璃晶片形成通孔的方法包括在玻璃晶片的外表面上沉积材料层，该材料层的选择比率高于玻璃晶片的选择比，在玻璃晶片的一侧上形成通孔图案部分 所述材料层进行蚀刻所述通路图案部分以形成预备通孔的第一蚀刻，消除在形成所述通路图案部分中使用的剩余图案材料，进行第二蚀刻，其中所述预通孔 被蚀刻以形成具有光滑表面并延伸穿过玻璃晶片的通孔，并且消除材料层。 根据本发明的方法能够通过玻璃晶片形成通孔，而不会形成底切或微小的裂缝，从而提高MEMS元件的成品率和可靠性。

    Method and apparatus for vacuum-mounting a micro electro mechanical system on a substrate
    7.
    发明授权
    Method and apparatus for vacuum-mounting a micro electro mechanical system on a substrate 失效
    将微机电系统真空安装在基板上的方法和装置

    公开(公告)号：US07172916B2

    公开(公告)日：2007-02-06

    申请号：US10701552

    申请日：2003-11-06

    申请人： Kyu-dong Jung ,  Chan-Bong Jun ,  Hyung Choi ,  Seok-jin Kang ,  Seog-woo Hong ,  Seok-whan Chung ,  Moon-chul Lee ,  Eun-sung Lee

    发明人： Kyu-dong Jung ,  Chan-Bong Jun ,  Hyung Choi ,  Seok-jin Kang ,  Seog-woo Hong ,  Seok-whan Chung ,  Moon-chul Lee ,  Eun-sung Lee

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00285

    摘要： A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.

    摘要翻译： 用于真空安装至少一个微机电系统（MEMS）在基板上的方法和装置包括用于将惰性气体注入真空室的气体注入部分; 用于对准半导体衬底和盖的衬底对准部分，所述盖具有形成在其中的空腔和附着到腔的内表面的吸气剂; 用于将半导体衬底和盖结合在一起的接合部分; 以及控制部分，用于控制衬底对准部分以对准半导体和盖子，用于控制气体注入部分以将惰性气体注入真空室中，并且用于控制接合部分将半导体衬底和盖子结合在一起，之后 注入惰性气体。

    Ultrasonic transducer structure, ultrasonic transducer, and method of manufacturing ultrasonic transducer
    8.
    发明授权
    Ultrasonic transducer structure, ultrasonic transducer, and method of manufacturing ultrasonic transducer 有权
    超声波换能器结构，超声波换能器及超声波换能器的制造方法

    公开(公告)号：US09120127B2

    公开(公告)日：2015-09-01

    申请号：US13616285

    申请日：2012-09-14

    申请人： Byung-gil Jeong ,  Seog-woo Hong ,  Dong-kyun Kim ,  Seok-whan Chung ,  Hyung-jae Shin

    发明人： Byung-gil Jeong ,  Seog-woo Hong ,  Dong-kyun Kim ,  Seok-whan Chung ,  Hyung-jae Shin

    IPC分类号： H01L41/053 ,  B06B1/02

    CPC分类号： B06B1/0292 ,  Y10T29/49005

    摘要： An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer.

    摘要翻译： 提供超声换能器结构，超声波换能器和制造超声换能器的方法。 超声波换能器结构包括：驱动晶片，其包括驱动电路; 以及超声波换能器晶片，其设置在所述驱动晶片上并且包括形成有通孔的第一晶片，形成在所述第一晶片上的第一绝缘层，与所述第一绝缘层间隔开的第二晶片，以及空腔 形成在第一绝缘层和第二晶片之间。

    Method of fabricating one-way transparent optical system
    9.
    发明申请
    Method of fabricating one-way transparent optical system 有权
    制造单向透明光学系统的方法

    公开(公告)号：US20060115914A1

    公开(公告)日：2006-06-01

    申请号：US11290412

    申请日：2005-12-01

    申请人： Yong-seop Yoon ,  Byoung-ho Cheong ,  Seok-whan Chung

    发明人： Yong-seop Yoon ,  Byoung-ho Cheong ,  Seok-whan Chung

    IPC分类号： H01L21/00

    CPC分类号： H01L51/5281 ,  G02B1/11 ,  G02B5/3025 ,  H01L33/44

    摘要： A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes: forming a photoresist on an upper surface of a transparent substrate; heating and carbonizing the photoresist to form a black body layer; patterning the black body layer to form a plurality of light-absorbing materials on the transparent substrate; and forming protrusion structures having a shape of a convex lens shape for refracting incident light toward a corresponding light-absorbing material of the light-absorbing materials, on the transparent substrate on which the light-absorbing materials are formed.

    摘要翻译： 提供了一种制造单向透明光学系统的方法，其中外部光被有效地截获并且内部光线几乎没有损失地通过。 该方法包括：在透明基板的上表面上形成光致抗蚀剂; 加热和碳化光致抗蚀剂以形成黑体层; 图案化黑体层以在透明基板上形成多个光吸收材料; 以及在其上形成有光吸收材料的透明基板上形成具有用于将入射光折射到相应的光吸收材料的光吸收材料的凸透镜形状的突起结构。