摘要:
A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer, forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole, eliminating any remaining patterning material used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole is etched to form a via hole having a smooth surface and extending through the glass wafer, and eliminating the material layer. The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.
摘要:
A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.
摘要:
A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-mealing the deposited thin metal film. By the ion-mealing, the method is capable of connecting a metal wiring to a via hole having an undercut.
摘要:
A vertical MEMS gyroscope by horizontal driving includes a substrate, a support layer fixed on an upper surface of an area of the substrate, a driving structure floating above the substrate and having a portion fixed to an upper surface of the support layer and another portion in parallel with the fixed portion, the driving structure having a predetermined area capable of vibrating in a predetermined direction parallel to the substrate, a detecting structure fixed to the driving structure on a same plane as the driving structure, and having a predetermined area capable of vibrating in a vertical direction with respect to the substrate, a cap wafer bonded with the substrate positioned above the driving structure and the detecting structure, and a fixed vertical displacement detection electrode formed at a predetermined location of an underside of the cap wafer, for detecting displacement of the detecting structure in the vertical direction.
摘要:
A packaging chip in which a circuit module is packaged and a method of packaging a circuit module are provided. The packaging chip includes a base wafer; a circuit module on the base wafer; a packaging wafer having a cavity and combined with the base wafer so that the circuit module fits inside the cavity; a connecting electrode connecting upper and lower surfaces of the cavity; and a seed layer between the connecting electrode and the packaging wafer. The method includes etching a lower surface of the packaging wafer to form a cavity, stacking a metal layer in an area of the lower surface, combining the base wafer with the packaging wafer, polishing the packaging wafer, forming a viahole through the packaging wafer, stacking a seed layer on the packaging wafer, plating the inside of the viahole, removing the seed layer and forming an electrode.
摘要:
A multi stack packaging chip and a method of manufacturing the chip are provided. The method includes forming at least one second circuit element on a first wafer; forming a second wafer having a cavity and a one third circuit element formed opposite to the cavity; forming a solder on the second wafer; and combining the second wafer with the first wafer so that the second circuit element and the cavity correspond. The chip includes a flip-chip packaged chip in which a first circuit element is packaged using a first wafer; a second circuit element formed on the first wafer; a second wafer having a cavity and combined with the first wafer so that the cavity and the second circuit element correspond; a third circuit element formed on the second wafer; and a solder formed on the second wafer, the solder electrically coupling the second wafer to a packaging substrate.
摘要:
A cap for a semiconductor device package, including a body formed at a predetermined thickness with a cavity. The cap further includes a first seed layer formed on an inner circumference of a first via hole formed at a predetermined depth from the cavity formation surface of the body, a second seed layer formed on an inner circumference of a second via hole formed at a predetermined depth from the opposite surface to the cavity formation surface of the body, and plating materials filled in the first via hole and the second via hole.
摘要:
A wafer level packaging cap and method thereof for a wafer level packaging are provided. The wafer level packaging cap covering a device wafer with a device thereon, includes a cap wafer having on a bottom surface a cavity providing a space for receiving the device, and integrally combined with the device wafer, a plurality of metal lines formed on the bottom surface of the cap wafer to correspond to a plurality of device pads formed on the device wafer to be electrically connected to the device, a plurality of buffer portions connected to the plurality of metal lines and comprising a buffer wafer with a plurality of grooves and a metal filled in the plurality of grooves, a plurality of connection rods electrically connected to the plurality of buffer portions and penetrating the cap wafer from a top portion of the buffer portion, and a plurality of cap pads formed on a top surface of the cap wafer and electrically connected to a plurality of connection rods.
摘要:
A wafer level packaging cap and method thereof for a wafer level packaging are provided. The wafer level packaging cap covering a device wafer with a device thereon, includes a cap wafer having on a bottom surface a cavity providing a space for receiving the device, and integrally combined with the device wafer, a plurality of metal lines formed on the bottom surface of the cap wafer to correspond to a plurality of device pads formed on the device wafer to be electrically connected to the device, a plurality of buffer portions connected to the plurality of metal lines and comprising a buffer wafer with a plurality of grooves and a metal filled in the plurality of grooves, a plurality of connection rods electrically connected to the plurality of buffer portions and penetrating the cap wafer from a top portion of the buffer portion, and a plurality of cap pads formed on a top surface of the cap wafer and electrically connected to a plurality of connection rods.
摘要:
A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.