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    Flash memory device and wordline voltage generating method thereof
    3.
    发明授权
    Flash memory device and wordline voltage generating method thereof 有权
    闪存装置及其字线电压产生方法

    公开(公告)号：US08559229B2

    公开(公告)日：2013-10-15

    申请号：US13246040

    申请日：2011-09-27

    申请人： Seung-Gum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

    发明人： Seung-Gum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/30 ,  G11C16/3436

    摘要： A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.

    摘要翻译： 一种闪存的字线电压产生方法，包括使用正电压发生器产生编程电压; 使用负电压发生器产生对应于多个负数据状态的多个负编程验证电压; 以及使用所述正电压发生器产生对应于至少一个或多个状态的至少一个或多个程序验证电压。 生成多个负编程验证电压包括产生第一负验证电压; 将负电压发生器的输出放电到高于第一负验证电压; 并执行负电荷泵送操作直到负电压发生器的输出达到第二负验证电压电平。

    FLASH MEMORY DEVICE AND WORDLINE VOLTAGE GENERATING METHOD THEREOF
    4.
    发明申请
    FLASH MEMORY DEVICE AND WORDLINE VOLTAGE GENERATING METHOD THEREOF 有权
    闪存存储器件及其线性电压产生方法

    公开(公告)号：US20120081957A1

    公开(公告)日：2012-04-05

    申请号：US13246040

    申请日：2011-09-27

    申请人： Seung-Bum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

    发明人： Seung-Bum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

    IPC分类号： G11C16/06 ,  G11C16/04

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/30 ,  G11C16/3436

    摘要： A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.

    摘要翻译： 一种闪存的字线电压产生方法，包括使用正电压发生器产生编程电压; 使用负电压发生器产生对应于多个负数据状态的多个负编程验证电压; 以及使用所述正电压发生器产生对应于至少一个或多个状态的至少一个或多个程序验证电压。 生成多个负编程验证电压包括产生第一负验证电压; 将负电压发生器的输出放电到高于第一负验证电压; 并执行负电荷泵送操作直到负电压发生器的输出达到第二负验证电压电平。

    Data storage device and operation method thereof
    5.
    发明授权
    Data storage device and operation method thereof 有权
    数据存储装置及其操作方法

    公开(公告)号：US09406386B2

    公开(公告)日：2016-08-02

    申请号：US14797203

    申请日：2015-07-13

    申请人： Jae-Duk Yu ,  Chul Bum Kim ,  Dongku Kang

    发明人： Jae-Duk Yu ,  Chul Bum Kim ,  Dongku Kang

    IPC分类号： G11C16/10 ,  G11C16/26 ,  G11C16/08 ,  G11C16/04

    CPC分类号： G11C16/10 ,  G11C8/12 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3418 ,  G11C2211/5648

    摘要： A data storage device includes a nonvolatile memory having a plurality of first memory cells connected to a first word line and a plurality of second memory cells connected to a second word line. A memory controller divides first data to be programmed in the first memory cells into first and second data groups and divides second data to be programmed in the second memory cells into third and fourth data groups. The nonvolatile memory device performs a third program operation of the second data group and a fourth program operation of the fourth data group after sequentially performing a first program operation of the first data group and a second program operation of the third data group.

    摘要翻译： 数据存储装置包括具有连接到第一字线的多个第一存储器单元和连接到第二字线的多个第二存储器单元的非易失性存储器。 存储器控制器将要在第一存储器单元中编程的第一数据划分成第一和第二数据组，并将要在第二存储器单元中编程的第二数据划分成第三和第四数据组。 在顺序执行第一数据组的第一编程操作和第三数据组的第二编程操作之后，非易失性存储器件执行第二数据组的第三程序操作和第四数据组的第四编程操作。