公开(公告)号：US06174650B1

公开(公告)日：2001-01-16

申请号：US09010830

申请日：1998-01-22

申请人： Masayuki Endo ,  Toru Fukumoto ,  Hiromi Ohsaki

发明人： Masayuki Endo ,  Toru Fukumoto ,  Hiromi Ohsaki

IPC分类号： G03F700

CPC分类号： G03F7/0757 ,  G03F7/00 ,  G03F7/0045 ,  G03F7/0751 ,  G03F7/70991 ,  H01L21/3121

摘要： In a clean room, after conducting a surface treatment on the surface of a semiconductor substrate with 4-trimethylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a chemically amplified resist, thereby forming a first resist film. Then, the first resist film is successively subjected to exposure, PEB and development, thereby forming a first resist pattern of the chemically amplified resist. Next, in the same clean room, after conducting a surface treatment on the surface of the semiconductor substrate with 4-dimethyl-n-hexylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a non-chemically amplified resist, thereby forming a second resist film. Then, the second resist film is successively subjected to the exposure, the PEB and the development, thereby forming a second resist pattern of the non-chemically amplified resist.

摘要翻译： 在洁净室中，在用4-三甲基甲硅烷氧基-3-戊烯-2-酮在半导体衬底的表面进行表面处理后，用化学放大抗蚀剂涂覆半导体衬底的处理表面，从而形成第一抗蚀剂 电影。 然后，依次对第一抗蚀剂膜进行曝光，PEB显影，形成化学放大抗蚀剂的第一抗蚀剂图案。 接下来，在相同的洁净室中，在用4-二甲基 - 正己基甲硅烷氧基-3-戊烯-2-酮在半导体基板的表面上进行表面处理后， 化学放大抗蚀剂，从而形成第二抗蚀剂膜。 然后，第二抗蚀剂膜依次经受曝光，PEB和显影，由此形成非化学放大抗蚀剂的第二抗蚀剂图案。

公开(公告)号：US6133465A

公开(公告)日：2000-10-17

申请号：US951001

申请日：1997-10-15

申请人： Masayuki Endo ,  Hiromi Ohsaki

发明人： Masayuki Endo ,  Hiromi Ohsaki

IPC分类号： G03F7/075 ,  C07F7/08 ,  C07F7/18

CPC分类号： G03F7/0751

摘要： A surface of a semiconductor substrate of silicon is supplied with 4-trimethylsiloxy-3-penten-2-one serving as a surface treatment agent. Thus, H in OH groups existing on the surface of the semiconductor substrate is substituted with Si(CH.sub.3).sub.3 (i.e., a trimethylsilyl group), resulting in producing CH.sub.3 COCH.sub.2 COCH.sub.3 (i.e., acetylacetone). Then, the surface of the semiconductor substrate is coated with a resist, exposed by using a desired mask, and subjected successively to PEB and development, thereby forming a resist pattern thereon. Since the surface of the semiconductor substrate is treated with 4-trimethylsiloxy-3-penten-2-one, the surface of the semiconductor substrate is made to be hydrophobic, so that the adhesion of the semiconductor substrate can be improved. As a result, the resultant resist pattern has a satisfactory shape free from peeling.

摘要翻译： 供给作为表面处理剂的4-三甲基甲硅烷氧基-3-戊烯-2-酮的硅的半导体基板的表面。 因此，存在于半导体衬底表面的OH基中的H被Si（CH 3）3（即三甲基甲硅烷基）取代，导致产生CH 3 COCH 2 COCH 3（即乙酰丙酮）。 然后，用抗蚀剂涂布半导体基板的表面，利用所需的掩模进行曝光，依次进行PEB显影，形成抗蚀图案。 由于半导体衬底的表面被4-三甲基甲硅烷氧基-3-戊烯-2-酮处理，所以半导体衬底的表面被制成疏水性，从而可以提高半导体衬底的粘合性。 结果，得到的抗蚀剂图形具有令人满意的剥离形状。

公开(公告)号：US6054255A

公开(公告)日：2000-04-25

申请号：US888129

申请日：1997-07-03

申请人： Satoko Nakaoka ,  Masayuki Endo ,  Hiromi Ohsaki ,  Akiko Katsuyama

发明人： Satoko Nakaoka ,  Masayuki Endo ,  Hiromi Ohsaki ,  Akiko Katsuyama

IPC分类号： G03F7/004 ,  G03F7/16 ,  G03F7/00

CPC分类号： G03F7/16 ,  G03F7/0045

摘要： To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH.sub.3).sub.3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH.sub.3).sub.2 CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.

摘要翻译： 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂，使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此，将Si（CH 3）3（三甲基甲硅烷基）取代为半导体基板的表面上的OH基的氢原子，得到（CH 3）2 CO（丙酮）。 随后，通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光，然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨，因此可以形成具有优异构型的图案，其上不形成不溶性表皮层。

公开(公告)号：US06258972B1

公开(公告)日：2001-07-10

申请号：US08691124

申请日：1996-08-01

申请人： Satoko Nakaoka ,  Masayuki Endo ,  Hiromi Ohsaki ,  Akiko Katsuyama

发明人： Satoko Nakaoka ,  Masayuki Endo ,  Hiromi Ohsaki ,  Akiko Katsuyama

IPC分类号： C07E708

CPC分类号： G03F7/0751

摘要： To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH3)3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH3)2CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.

摘要翻译： 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂，使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此，将Si（CH 3）3（三甲基甲硅烷基）取代为半导体衬底的表面上的OH基的氢原子，得到（CH 3）2 CO（丙酮）。 随后，通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光，然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨，因此可以形成具有优异构型的图案，其上不形成不溶性表皮层。

公开(公告)号：US20130272913A1

公开(公告)日：2013-10-17

申请号：US13995565

申请日：2011-12-09

申请人： Mikako Takeda ,  Shohei Nakakubo ,  Kazuhiko Kirihara ,  Masayuki Endo

发明人： Mikako Takeda ,  Shohei Nakakubo ,  Kazuhiko Kirihara ,  Masayuki Endo

IPC分类号： C22C38/54 ,  C22C38/16 ,  C22C38/08 ,  C22C38/14 ,  C22C38/12 ,  B21B1/16 ,  C22C38/42 ,  C22C38/20 ,  C22C38/06 ,  C22C38/04 ,  C22C38/02 ,  C22C38/00 ,  C22C38/50

CPC分类号： C22C38/04 ,  B21B1/16 ,  C21D1/74 ,  C21D8/065 ,  C21D9/525 ,  C22C38/00 ,  C22C38/001 ,  C22C38/002 ,  C22C38/02 ,  C22C38/06 ,  C22C38/08 ,  C22C38/12 ,  C22C38/14 ,  C22C38/16 ,  C22C38/20 ,  C22C38/42 ,  C22C38/50 ,  C22C38/54

摘要： This steel wire material contains 0.05%-1.2% C (“%” means “% by mass,” same hereinafter for chemical components.), 0.01%-0.7% Si, 0.1%-1.5% Mn, 0.02% max. P (not including 0%), 0.02% max. S (not including 0%), and 0.005% max. N (not including 0%), with the remainder being iron and unavoidable impurities. The steel wire material has a scale 6.0-20 μm thick and holes of an equivalent circle diameter of 1 μm max. in said scale that occupy 10% by area max. Said scale does not detach in the cooling process after hot rolling or during storage or transportation but can readily detach during mechanical descaling.

摘要翻译： 该钢丝材含有0.05％-1.2％C（“％”表示“质量％”，化学成分相同），0.01％-0.7％Si，0.1％〜1.5％Mn，0.02％以下。 P（不包括0％），最大0.02％。 S（不含0％），最大0.005％。 N（不包括0％），其余为铁和不可避免的杂质。 钢丝材料的厚度为6.0-20μm，当量圆直径为1mum的孔。 按规模占总面积的10％。 所述鳞片在热轧后或在储存或运输期间的冷却过程中不分离，但是在机械除锈时容易分离。

公开(公告)号：US20080193882A1

公开(公告)日：2008-08-14

申请号：US11958661

申请日：2007-12-18

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/2041

摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.

摘要翻译： 在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。 然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。 此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。 在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

公开(公告)号：US07338743B2

公开(公告)日：2008-03-04

申请号：US11197296

申请日：2005-08-05

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03C1/76 ,  G03C1/492 ,  G03C1/494 ,  G03C5/00

CPC分类号： G03F7/0392 ,  G03F7/0395 ,  G03F7/0397

摘要： A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.

摘要翻译： 抗蚀剂材料包括第一聚合物，其中碱溶性基团的一部分被酸酸化的酸不稳定基团保护; 其中基本上所有的碱溶性基团都被被酸化的酸不稳定基团保护的第二聚合物; 和酸发生剂。

公开(公告)号：US07273820B2

公开(公告)日：2007-09-25

申请号：US10399755

申请日：2001-10-09

申请人： Hideo Nakagawa ,  Masaru Sasago ,  Masayuki Endo ,  Yoshihiko Hirai

发明人： Hideo Nakagawa ,  Masaru Sasago ,  Masayuki Endo ,  Yoshihiko Hirai

IPC分类号： H01L21/469

CPC分类号： H01L21/76819 ,  H01L21/31051

摘要： After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.

摘要翻译： 在通过向形成有阶梯层的基板的表面供给流动性的材料形成流体膜之后，通过具有平面的按压面的按压部件将流体膜压在基板上，使得流体膜的表面为 平面化 在该状态下加热流体膜，由此固化，形成具有平坦表面的固化膜。

公开(公告)号：US20070082292A1

公开(公告)日：2007-04-12

申请号：US11602377

申请日：2006-11-21

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03C1/00

CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/095

摘要： A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.

摘要翻译： 用于在化学放大抗蚀剂膜上形成水溶性膜的水溶性材料包括水溶性聚合物，酸产生剂和构成用于掺入酸产生剂的包合物的化合物。 此外，在图案形成方法中，在基板上形成化学放大抗蚀剂膜，以及由水溶性材料构成的水溶性膜，所述水溶性物质包含水溶性聚合物，酸产生剂和构成包合物的化合物， 在抗蚀剂膜上形成并入酸产生剂。 此后，通过选择性地照射通过水溶性膜曝光光的抗蚀剂膜来进行图案曝光，使得到的抗蚀剂膜显影并除去水溶性膜。 因此，形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US20070026341A1

公开(公告)日：2007-02-01

申请号：US11492957

申请日：2006-07-26

申请人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masayuki Endo ,  Masaru Sasago ,  Haruhiko Komoriya ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kazuhiko Maeda

发明人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masayuki Endo ,  Masaru Sasago ,  Haruhiko Komoriya ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kazuhiko Maeda

IPC分类号： G03C1/00

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

摘要： A resist protective coating material is provided comprising an α-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.

摘要翻译： 提供抗蚀剂保护涂层材料，其包含具有环状全氟烷基的α-三氟甲基丙烯酸/降冰片烯共聚物作为侧基。 在图案形成过程中，材料在抗蚀剂膜上形成保护性涂层，其是不溶于水的，可溶于碱性显影剂中并且与抗蚀剂膜不混溶，从而有​​效地实施浸渍光刻。