公开(公告)号：US06391163B1

公开(公告)日：2002-05-21

申请号：US09518004

申请日：2000-03-02

申请人： Vikram Pavate ,  Murali Abburi ,  Murali Narasimhan ,  Seshadri Ramaswami

发明人： Vikram Pavate ,  Murali Abburi ,  Murali Narasimhan ,  Seshadri Ramaswami

IPC分类号： C23C1434

CPC分类号： H01L21/76871 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3426 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76873 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method and apparatus for forming a copper layer on a substrate, preferably using a sputtering process. The sputtering process involves bombarding a conductive member of enhanced hardness with ions to dislodge the copper from the conductive member. The hardness of the target may be enhanced by alloying the copper conductive member with another material and/or mechanically working the material of the conductive member during its manufacturing process in order to improve conductive member and film qualities. The copper may be alloyed with magnesium, zinc, aluminum, iron, nickel, silicon and any combination thereof.

摘要翻译： 本发明提供了一种在衬底上形成铜层的方法和装置，优选使用溅射工艺。 溅射工艺包括用离子轰击具有增强硬度的导电部件，以从导电部件移除铜。 可以通过在其制造过程中将铜导电构件与另一材料合金化和/或机械地加工导电构件的材料来增强靶的硬度，以便改善导电构件和膜质量。 铜可以与镁，锌，铝，铁，镍，硅及其任何组合合金化。

公开(公告)号：US06436207B1

公开(公告)日：2002-08-20

申请号：US09566657

申请日：2000-05-08

申请人： Murali Abburi ,  Seshadri Ramaswami

发明人： Murali Abburi ,  Seshadri Ramaswami

IPC分类号： C23C1435

CPC分类号： H01J37/3426 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405

摘要： Improved targets for use in DC magnetron sputtering of nickel or like ferromagnetic face-centered cubic (FCC) metals are disclosed for forming metallization films having effective edge-to-edge deposition uniformity of 5% (3&sgr;) or better. Such targets may be characterized as having: (a) a homogeneous texture mix that is at least 20% of a texture content and less than 50% of a texture content, (b) an initial pass-through flux factor (%PTF) of about 30% or greater; and(c) a homogeneous grain size of about 200 &mgr;m or less.

摘要翻译： 公开了用于形成具有5％（3σ）或更好的边缘到边缘沉积均匀性的金属化膜的镍或类似铁磁面心立方（FCC）金属的直流磁控溅射的改进目标。 这样的目标可以被表征为具有：（a）均匀纹理混合物，其具有至少20％的质感含量和小于50％的<111>质地含量，（b）初始直通通量 因子（％PTF）约30％以上; 和（c）约200μm或更小的均匀晶粒尺寸。

公开(公告)号：US06521107B2

公开(公告)日：2003-02-18

申请号：US09823341

申请日：2001-03-29

申请人： Murali Abburi ,  Seshadri Ramaswami

发明人： Murali Abburi ,  Seshadri Ramaswami

IPC分类号： C23C1434

CPC分类号： H01J37/3426 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405

摘要： Improved targets for use in DC magnetron sputtering of nickel or like ferromagnetic face-centered cubic (FCC) metals are disclosed for forming metallization films having effective edge-to-edge deposition uniformity of 5%(3&sgr;) or better. Such targets may be characterized as having: (a) a homogeneous texture mix that is at least 20% of a texture content and less than 50% of a texture content, (b) an initial pass-through flux factor (% PTF) of about 30% or greater; and(c) a homogeneous grain size of about 200 &mgr;m or less.

摘要翻译： 公开了用于形成具有5％（3σ）或更好的边缘到边缘沉积均匀性的金属化膜的镍或类似铁磁面心立方（FCC）金属的直流磁控溅射的改进目标。 这样的目标可以被表征为具有：（a）均匀纹理混合物，其具有至少20％的质感含量和小于50％的<111>质地含量，（b）初始直通通量 因子（％PTF）约30％以上; 和（c）约200μm或更小的均匀晶粒尺寸。

公开(公告)号：US06472867B1

公开(公告)日：2002-10-29

申请号：US09791967

申请日：2001-02-21

申请人： Murali Abburi ,  Seshadri Ramaswami

发明人： Murali Abburi ,  Seshadri Ramaswami

IPC分类号： G01N2772

CPC分类号： C23C14/3414

摘要： Improved targets for use in DC magnetron sputtering of nickel or like ferromagnetic face-centered cubic (FCC) metals are included for forming metallization films having effective edge-to-edge deposition uniformity of 5% (3&sgr;) or better. Such targets may be characterized as having: (a) a homogeneous texture mix that is at least 20% of a texture content and less than 50% of a texture content, (b) an initial pass-through flux factor (% PTF) of about 30% or greater; and(c) a homogeneous grain size of about 200 &mgr;m or less.

摘要翻译： 包括用于镍或类似铁磁面心立方（FCC）金属的直流磁控溅射的改进目标，用于形成具有5％（3σ）或更好的边缘到边缘沉积均匀度的金属化膜。 这样的目标可以被表征为具有：（a）均匀纹理混合物，其具有至少20％的质感含量和小于50％的<111>质地含量，（b）初始直通通量 因子（％PTF）约30％以上; 和（c）约200μm或更小的均匀晶粒尺寸。

公开(公告)号：US6139701A

公开(公告)日：2000-10-31

申请号：US272974

申请日：1999-03-18

申请人： Vikram Pavate ,  Seshadri Ramaswami ,  Murali Abburi ,  Murali Narasimhan

发明人： Vikram Pavate ,  Seshadri Ramaswami ,  Murali Abburi ,  Murali Narasimhan

IPC分类号： C22C9/00 ,  C23C14/34 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285

CPC分类号： C23C14/3414

摘要： A copper sputtering target is provided for producing copper films having reduced in-film defect densities. In addition to reducing dielectric inclusion content of the copper target material, the hardness of the copper target is maintained within a range greater than 45 Rockwell. Within this range defect generation from arc-induced mechanical failure is reduced. Preferably hardness is achieved by limiting grain size to less than 50 microns, and most preferably to less than 25 microns. The surface roughness preferably is limited to less than 20 micro inches, or more preferably, less than 5 micro inches to reduce defect generation from field-enhanced emission. This grain size range preferably is achieved by limiting the purity level of the copper target material to a level less than 99.9999%, preferably within a range between 99.995% to 99.9999%, while reducing particular impurity levels.

摘要翻译： 提供一种铜溅射靶，用于制造薄膜缺陷密度降低的铜膜。 除了降低铜靶材料的电介质夹杂物含量外，铜靶的硬度保持在大于45的洛氏硬度范围内。 在此范围内，电弧引起的机械故障的缺陷产生减少。 优选地，通过将​​晶粒尺寸限制为小于50微米，最优选小于25微米来实现硬度。 表面粗糙度优选限于小于20微英寸，或更优选小于5微英寸，以减少场增强发射的缺陷产生。 该粒度范围优选通过将铜靶材料的纯度水平限制在小于99.9999％，优选在99.995％至99.9999％之间的范围内，同时降低特定杂质水平来实现。

公开(公告)号：US6086725A

公开(公告)日：2000-07-11

申请号：US54067

申请日：1998-04-02

申请人： Murali Abburi ,  Seshadri Ramaswami

发明人： Murali Abburi ,  Seshadri Ramaswami

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC分类号： H01J37/3426 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405

摘要： Improved targets for use in DC magnetron sputtering of nickel or like ferromagnetic face-centered cubic (FCC) metals are disclosed for forming metallization films having effective edge-to-edge deposition uniformity of 5%(3.sigma.) or better. Such targets may be characterized as having: (a) a homogeneous texture mix that is at least 20% of a texture content and less than 50% of a texture content, (b) an initial pass-through flux factor (% PTF) of about 30% or greater; and (c) a homogeneous grain size of about 200 .mu.m or less.

摘要翻译： 公开了用于镍或类似铁磁面心立方（FCC）金属的直流磁控溅射的改进目标，用于形成具有5％（3西格玛）或更好的边缘到边缘沉积均匀度的金属化膜。 这样的目标可以被表征为具有：（a）均匀纹理混合物，其具有至少20％的质感含量和小于50％的<111>质地含量，（b）初始直通通量 因子（％PTF）约30％以上; 和（c）约200μm以下的均匀粒径。

公开(公告)号：US08940619B2

公开(公告)日：2015-01-27

申请号：US13917973

申请日：2013-06-14

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Saravjeet Singh ,  Todd Egan ,  Ajay Kumar ,  Seshadri Ramaswami

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Saravjeet Singh ,  Todd Egan ,  Ajay Kumar ,  Seshadri Ramaswami

IPC分类号： H01L21/78 ,  H01L21/463 ,  H01L21/47 ,  H01L21/475 ,  H01L21/82 ,  H01L21/56 ,  H01L21/683

CPC分类号： H01L23/32 ,  H01L21/463 ,  H01L21/47 ,  H01L21/475 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L21/82 ,  H01L27/04 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of dicing semiconductor wafers, and transporting singulated die, are described. In an example, a method of dicing a wafer having a plurality of integrated circuits thereon involves dicing the wafer into a plurality of singulated dies disposed above a dicing tape. The method also involves forming a water soluble material layer over and between the plurality of singulated dies, above the dicing tape.

摘要翻译： 描述了切割半导体晶片和输送单个模具的方法。 在一个示例中，在其上划分具有多个集成电路的晶片的方法包括将晶片切割成设置在切割带上方的多个单片模具。 该方法还涉及在切割胶带上方的多个分割模具之上和之间形成水溶性材料层。

公开(公告)号：US06627542B1

公开(公告)日：2003-09-30

申请号：US09604858

申请日：2000-06-27

申请人： Srinivas Gandikota ,  Rong Tao ,  Liang-Yuh Chen ,  Seshadri Ramaswami

发明人： Srinivas Gandikota ,  Rong Tao ,  Liang-Yuh Chen ,  Seshadri Ramaswami

IPC分类号： H01L2144

CPC分类号： H01L21/76868 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

摘要： A method and apparatus is provided for improving adherence of metal seed layers to barrier layers in electrochemical deposition techniques. The method includes depositing an adhesion layer continuously or semi-continuously without agglomeration onto a barrier layer prior to depositing a seed layer by controlling the substrate temperature, the chamber pressure, and/or the power delivered to a deposition chamber. Deposition of the adhesion layer prevents layer delamination which leads to agglomeration of the deposited layers and formation of voids in the high aspect ratio features.

摘要翻译： 提供了一种用于在电化学沉积技术中改善金属种子层对阻挡层的粘附性的方法和装置。 该方法包括通过控制衬底温度，室压力和/或输送到沉积室的功率沉积种子层之前将粘附层连续地或半连续地沉积在阻挡层上。 粘附层的沉积防止了层析层，导致沉积层的聚集和高纵横比特征形成空隙。

公开(公告)号：US06228186B1

公开(公告)日：2001-05-08

申请号：US09418672

申请日：1999-10-14

申请人： Vikram Pavate ,  Keith J. Hansen ,  Glen Mori ,  Murali Narasimhan ,  Seshadri Ramaswami ,  Jaim Nulman

发明人： Vikram Pavate ,  Keith J. Hansen ,  Glen Mori ,  Murali Narasimhan ,  Seshadri Ramaswami ,  Jaim Nulman

IPC分类号： C22F100

CPC分类号： C23C14/3414 ,  Y10S29/002 ,  Y10S29/005 ,  Y10T29/49988

摘要： Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

摘要翻译： 公开了用于形成具有低缺陷密度的金属化膜的改进的用于铝或类似金属的DC_磁控溅射的靶。 还公开了制造和使用这些靶的方法。 诸如由金属氧化物夹杂物组成的电导率异常可以引起目标表面和等离子体之间的电弧。 电弧会导致过剩的沉积材料以斑块或斑点的形式产生。 减少电导率异常的含量和加强待沉积材料可以减少这种斑块或斑点的产生。 其它限制步骤包括平滑地对目标表面进行精加工和等离子体的低应力升高。

公开(公告)号：US5539247A

公开(公告)日：1996-07-23

申请号：US447870

申请日：1995-05-24

申请人： Robin W. Cheung ,  Seshadri Ramaswami ,  David F. Kyser

发明人： Robin W. Cheung ,  Seshadri Ramaswami ,  David F. Kyser

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76879

摘要： Metal pillars (18) having diameters of less than about 1.0 .mu.m are grown in vias (16) in dielectric layers (14) between metal layers (12, 22) by a process comprising: (a) forming a first metal layer (12) at a first temperature and patterning the metal layer; (b) forming the dielectric layer to encapsulate the first patterned metal layer, the dielectric layer having a compressive stress of at least about 100 MegaPascal and being formed at a second temperature; (c) opening vias in the dielectric layer to exposed underlying portions of the patterned metal layer, the vias being less than about 1.0 .mu.m in diameter; (d) heating the semiconductor wafer at a temperature that is greater than either the first or second temperatures to induce growth of metal in the vias from the metal layer; and (e) forming the second metal layer (22) over the dielectric layer to make contact with the metal pillars.