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198 条记录 (耗时 0.034 秒)

    Continuous, non-agglomerated adhesion of a seed layer to a barrier layer
    1.
    发明授权
    Continuous, non-agglomerated adhesion of a seed layer to a barrier layer 有权
    种子层与阻挡层的连续的非团聚粘附

    公开(公告)号：US06627542B1

    公开(公告)日：2003-09-30

    申请号：US09604858

    申请日：2000-06-27

    申请人： Srinivas Gandikota ,  Rong Tao ,  Liang-Yuh Chen ,  Seshadri Ramaswami

    发明人： Srinivas Gandikota ,  Rong Tao ,  Liang-Yuh Chen ,  Seshadri Ramaswami

    IPC分类号： H01L2144

    CPC分类号： H01L21/76868 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

    摘要： A method and apparatus is provided for improving adherence of metal seed layers to barrier layers in electrochemical deposition techniques. The method includes depositing an adhesion layer continuously or semi-continuously without agglomeration onto a barrier layer prior to depositing a seed layer by controlling the substrate temperature, the chamber pressure, and/or the power delivered to a deposition chamber. Deposition of the adhesion layer prevents layer delamination which leads to agglomeration of the deposited layers and formation of voids in the high aspect ratio features.

    摘要翻译： 提供了一种用于在电化学沉积技术中改善金属种子层对阻挡层的粘附性的方法和装置。 该方法包括通过控制衬底温度，室压力和/或输送到沉积室的功率沉积种子层之前将粘附层连续地或半连续地沉积在阻挡层上。 粘附层的沉积防止了层析层，导致沉积层的聚集和高纵横比特征形成空隙。

    Low temperature integrated via and trench fill process and apparatus
    2.
    发明授权
    Low temperature integrated via and trench fill process and apparatus 失效
    低温集成通孔和沟槽填充工艺和设备

    公开(公告)号：US6139697A

    公开(公告)日：2000-10-31

    申请号：US792292

    申请日：1997-01-31

    申请人： Liang-Yuh Chen ,  Roderick Craig Mosely ,  Fusen Chen ,  Rong Tao ,  Ted Guo

    发明人： Liang-Yuh Chen ,  Roderick Craig Mosely ,  Fusen Chen ,  Rong Tao ,  Ted Guo

    IPC分类号： H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  C23C14/34

    CPC分类号： H01L21/76877

    摘要： The present invention relates generally to an improved process for providing complete via fill on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer, such as CVD Al or CVD Cu, is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD Cu. Next, a PVD Cu is deposited onto the previously formed CVD Cu layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD Cu layer is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Cu layer. The via fill process of the present invention is also successful with air-exposure between the CVD Cu and PVD Cu steps.

    摘要翻译： 本发明一般涉及在衬底上提供完整的通孔填充物和金属层的平坦化以在半微米应用中形成连续的无空隙触点或通孔的改进方法。 在本发明的一个方面中，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后将CVD金属层（例如CVD Al或CVD Cu）在低温下沉积到耐火层上，以提供用于PVD Cu的保形润湿层。 接下来，在低于金属的熔点温度的温度下，将PVD Cu沉积在先前形成的CVD Cu层上。 所得到的CVD / PVD ​​Cu层基本上无空隙。 金属化处理优选在包括PVD和CVD处理室的一体化处理系统中进行，使得一旦将衬底引入真空环境中，就会发生通孔和触点的金属化，而不会在其上形成氧化物层 CVD Cu层。 本发明的通孔填充方法也可以在CVD Cu和PVD Cu步骤之间的空气曝光成功。

    Dual damascene metallization
    3.
    发明授权
    Dual damascene metallization 失效
    双镶嵌金属化

    公开(公告)号：US5989623A

    公开(公告)日：1999-11-23

    申请号：US914521

    申请日：1997-08-19

    申请人： Liang-Yuh Chen ,  Rong Tao ,  Ted Guo ,  Roderick Craig Mosely

    发明人： Liang-Yuh Chen ,  Rong Tao ,  Ted Guo ,  Roderick Craig Mosely

    IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  B05D5/12

    CPC分类号： H01L21/76843 ,  H01L21/76831 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76807

    摘要： The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates a barrier layer deposited on all exposed surface of a dielectric layer which contains a dual damascene via and wire definition. A conductive metal is deposited on the barrier layer using two or more deposition methods to fill the via and wire definition prior to planarization. The invention provides the advantages of having copper wires with lower resistivity (greater conductivity) and greater electromigration resistance than aluminum, a barrier layer between the copper wire and the surrounding dielectric material, void-free, sub-half micron selective CVD Al via plugs, and a reduced number of process steps to achieve such integration.

    摘要翻译： 本发明通常提供用于形成高度集成的互连件的金属化工艺。 更具体地，本发明提供了一种双镶嵌互连模块，其包含沉积在包含双镶嵌通孔和线定义的电介质层的所有暴露表面上的阻挡层。 在平坦化之前，使用两种或更多种沉积方法在阻挡层上沉积导电金属以填充通孔和导线的定义。 本发明提供了具有比铝更低的电阻率（更大的导电性）和更大的电迁移电阻的铜线，铜线和周围介电材料之间的阻挡层，无空隙的半微米选择性CVD Al通过插塞的优点， 并减少了实现这种集成的流程步骤。

    Dual damascene metallization
    4.
    发明授权
    Dual damascene metallization 失效
    双镶嵌金属化

    公开(公告)号：US06207222B1

    公开(公告)日：2001-03-27

    申请号：US09379696

    申请日：1999-08-24

    申请人： Liang-Yuh Chen ,  Rong Tao ,  Ted Guo ,  Roderick Craig Mosely

    发明人： Liang-Yuh Chen ,  Rong Tao ,  Ted Guo ,  Roderick Craig Mosely

    IPC分类号： B05D512

    CPC分类号： H01L21/76843 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877

    摘要： The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates a barrier layer deposited on all exposed surface of a dielectric layer which contains a dual damascene via and wire definition. A conductive metal is deposited on the barrier layer using two or more deposition methods to fill the via and wire definition prior to planarization. The invention provides the advantages of having copper wires with lower resistivity (greater conductivity) and greater electromigration resistance than aluminum, a barrier layer between the copper wire and the surrounding dielectric material, void-free, sub-half micron selective CVD Al via plugs, and a reduced number of process steps to achieve such integration.

    摘要翻译： 本发明通常提供用于形成高度集成的互连件的金属化工艺。 更具体地，本发明提供了一种双镶嵌互连模块，其包含沉积在包含双镶嵌通孔和线定义的电介质层的所有暴露表面上的阻挡层。 在平坦化之前，使用两种或更多种沉积方法在阻挡层上沉积导电金属以填充通孔和导线的定义。 本发明提供了具有比铝更低的电阻率（更大的导电性）和更大的电迁移电阻的铜线，铜线和周围介电材料之间的阻挡层，无空隙的半微米选择性CVD Al通过插塞的优点， 并减少了实现这种集成的流程步骤。

    Method of Preparing a Material of a Battery Cell
    6.
    发明申请
    Method of Preparing a Material of a Battery Cell 有权

    公开(公告)号：US20220410105A1

    公开(公告)日：2022-12-29

    申请号：US17899048

    申请日：2022-08-30

    申请人： Liang-Yuh Chen

    发明人： Liang-Yuh Chen

    IPC分类号： B01J8/18 ,  C01B13/14 ,  C01B13/34 ,  B22F9/22 ,  C01G1/02 ,  B22F9/08 ,  B01J8/24 ,  B01J12/02 ,  C01B25/45 ,  H01M4/04 ,  H01M4/36

    摘要： A continuous process for producing a material of a battery cell using a system having a mist generator, a drying chamber, one or more gas-solid separators and a reactor is provided. A mist generated from a liquid mixture of two or more metal precursor compounds in desired ratio is dried inside the drying chamber. Heated air or gas is served as the gas source for forming various gas-solid mixtures and as the energy source for reactions inside the drying chamber and the reactor. One or more gas-solid separators are used in the system to separate gas-solid mixtures from the drying chamber into solid particles mixed with the metal precursor compounds and continuously deliver the solid particles into the reactor for further reaction to obtain final solid material particles with desired crystal structure, particle size, and morphology.

    Method of Preparing a Material of a Battery Cell
    7.
    发明申请
    Method of Preparing a Material of a Battery Cell 有权

    公开(公告)号：US20210260550A1

    公开(公告)日：2021-08-26

    申请号：US17319974

    申请日：2021-05-13

    申请人： Liang-Yuh Chen

    发明人： Liang-Yuh Chen

    IPC分类号： B01J8/18 ,  C01B13/14 ,  C01B13/34 ,  B22F9/22 ,  C01G1/02 ,  B22F9/08 ,  B01J8/24 ,  B01J12/02 ,  C01B25/45 ,  H01M4/04 ,  H01M4/36

    摘要： A continuous process for producing a material of a battery cell using a system having a mist generator, a drying chamber, one or more gas-solid separators and a reactor is provided. A mist generated from a liquid mixture of two or more metal precursor compounds in desired ratio is dried inside the drying chamber. Heated air or gas is served as the gas source for forming various gas-solid mixtures and as the energy source for reactions inside the drying chamber and the reactor. One or more gas-solid separators are used in the system to separate gas-solid mixtures from the drying chamber into solid particles mixed with the metal precursor compounds and continuously deliver the solid particles into the reactor for further reaction to obtain final solid material particles with desired crystal structure, particle size, and morphology.

    Method of preparing a material of a battery cell
    8.
    发明授权
    Method of preparing a material of a battery cell 有权

    公开(公告)号：US11059012B2

    公开(公告)日：2021-07-13

    申请号：US16747450

    申请日：2020-01-20

    申请人： Liang-Yuh Chen

    发明人： Liang-Yuh Chen

    IPC分类号： B01J8/18 ,  C01B13/14 ,  C01B13/34 ,  B22F9/22 ,  C01G1/02 ,  B22F9/08 ,  B01J8/24 ,  B01J12/02 ,  C01B25/45 ,  H01M4/04 ,  H01M4/36 ,  H01M4/505 ,  H01M4/525

    摘要： A continuous process for producing a material of a battery cell using a system having a mist generator, a drying chamber, one or more gas-solid separators and a reactor is provided. A mist generated from a liquid mixture of two or more metal precursor compounds in desired ratio is dried inside the drying chamber. Heated air or gas is served as the gas source for forming various gas-solid mixtures and as the energy source for reactions inside the drying chamber and the reactor. One or more gas-solid separators are used in the system to separate gas-solid mixtures from the drying chamber into solid particles mixed with the metal precursor compounds and continuously deliver the solid particles into the reactor for further reaction to obtain final solid material particles with desired crystal structure, particle size, and morphology.

    Method of Preparing a Material of a Battery Cell
    9.
    发明申请
    Method of Preparing a Material of a Battery Cell 审中-公开

    公开(公告)号：US20180361338A1

    公开(公告)日：2018-12-20

    申请号：US16114114

    申请日：2018-08-27

    申请人： Liang-Yuh Chen

    发明人： Liang-Yuh Chen

    IPC分类号： B01J8/18 ,  B01J8/24 ,  B01J12/02 ,  B22F9/08 ,  B22F9/22 ,  C01B13/14 ,  C01B13/34 ,  C01G1/02

    摘要： A continuous process for producing a material of a battery cell using a system having a mist generator, a drying chamber, one or more gas-solid separators and a reactor is provided. A mist generated from a liquid mixture of two or more metal precursor compounds in desired ratio is dried inside the drying chamber. Heated air or gas is served as the gas source for forming various gas-solid mixtures and as the energy source for reactions inside the drying chamber and the reactor. One or more gas-solid separators are used in the system to separate gas-solid mixtures from the drying chamber into solid particles mixed with the metal precursor compounds and continuously deliver the solid particles into the reactor for further reaction to obtain final solid material particles with desired crystal structure, particle size, and morphology.

    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE
    10.
    发明申请
    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE 审中-公开
    具有高功率表面的气体分配淋浴

    公开(公告)号：US20120052216A1

    公开(公告)日：2012-03-01

    申请号：US13154060

    申请日：2011-06-06

    申请人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    发明人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    IPC分类号： C23C16/48

    CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/481 ,  C23C16/52

    摘要： Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.

    摘要翻译： 本发明的实施例提供了应用于化学气相沉积工艺中使用的处理腔室部件的表面涂层的方法和装置。 在一个实施例中，该装置提供一种喷头装置，其包括主体，延伸穿过主体的多个导管，多个导管中的每一个具有延伸到主体的处理表面的开口，以及设置在处理表面上的涂层， 该涂层为约50微米至约200微米厚，并且包括约0.8的发射率系数，约180微英寸至约220微英寸的平均表面粗糙度，以及约15％或更小的孔隙率。