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公开(公告)号：US20230238941A1
公开(公告)日：2023-07-27
申请号：US18126740
申请日：2023-03-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi IWAMOTO , Takeshi INAO
CPC classification number: H03H9/6489 , H03H7/0115 , H03H9/02574 , H03H9/14502
Abstract: A radio-frequency module includes a module substrate, an inductor, and an acoustic wave filter. The inductor overlaps at least a portion of the acoustic wave filter when seen in a plan view from the normal direction of the module substrate. The inductor includes first and second coils connected in series. Each of the first and second coils is a spiral or helical coil that is wound with more than one turn. At least a portion of the first coil overlaps the second coil when seen in a plan view from the normal direction of the module substrate. A direction of a magnetic field generated by the first coil is opposite to a direction of a magnetic field generated by the second coil.
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公开(公告)号：US20190295945A1
公开(公告)日：2019-09-26
申请号：US16435591
申请日：2019-06-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi IWAMOTO
IPC: H01L23/522 , H01L25/065 , H01L25/18 , H01L23/29 , H01L21/56 , H01L23/00
Abstract: A method of manufacturing an electronic-component-embedded substrate includes forming a power-supplying metal layer on a base, forming through electrodes that are to be connected to the power-supplying metal layer on the power-supplying metal layer by an electrolytic plating method, forming a first wiring line by patterning the power-supplying metal layer, forming an interlayer insulating layer such that the interlayer insulating layer covers a portion of the first wiring line, and forming a second wiring line on at least a portion of the first wiring line and a portion of the interlayer insulating layer such that the second wiring line crosses, on the interlayer insulating layer, a portion of the first wiring line.
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公开(公告)号：US20160301386A1
公开(公告)日：2016-10-13
申请号：US15185102
申请日：2016-06-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi IWAMOTO
CPC classification number: H03H9/706 , H03H9/0547 , H03H9/0566 , H03H9/0576 , H03H9/54 , H03H9/64 , H03H9/725
Abstract: An elastic wave filter device includes a transmission filter chip, a reception filter chip, and a mounting terminal. The transmission filter chip includes a piezoelectric substrate and an IDT electrode provided on a principal surface of the piezoelectric substrate. The reception filter chip includes a piezoelectric substrate and an IDT electrode provided on a principal surface of the piezoelectric substrate. The transmission filter chip and the reception filter chip are laminated to provide sealed spaces above the IDT electrodes. The mounting terminal is disposed on a side of the reception filter chip opposite to the transmission filter chip side. The elastic wave filter device is mounted such that the reception filter chip faces a mounting surface.
Abstract translation: 弹性波滤波器装置包括透射滤波器芯片，接收滤波器芯片和安装端子。 透射滤波器芯片包括设置在压电基板的主表面上的压电基片和IDT电极。 接收滤波器芯片包括压电基板和设置在压电基板的主表面上的IDT电极。 传输滤波器芯片和接收滤波器芯片被层压以提供IDT电极之上的密封空间。 安装端子设置在与发送滤波器芯片侧相对的接收滤波器芯片的一侧。 安装弹性波滤波器装置使得接收滤波器芯片面向安装表面。
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公开(公告)号：US20230216477A1
公开(公告)日：2023-07-06
申请号：US18122742
申请日：2023-03-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi IWAMOTO
Abstract: An acoustic wave device includes an acoustic wave element substrate, filter electrodes on a first surface of the acoustic wave element substrate, a first insulator layer covering a second surface of the acoustic wave element substrate, and a second insulator layer laminated on the first insulator layer and sandwiching the first insulator layer between the second insulator layer and the acoustic wave element substrate. The products of propagation speeds of an acoustic wave in those layers and densities of those layers satisfy a predetermined relationship.
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公开(公告)号：US20210366849A1
公开(公告)日：2021-11-25
申请号：US17395578
申请日：2021-08-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi IWAMOTO
IPC: H01L23/66 , H01L25/16 , H01L23/498 , H01L23/538 , H01L23/31 , H01L23/29 , H01L21/56 , H01L21/48 , H01L23/00 , H01L23/367
Abstract: A high-frequency module includes a semiconductor element, a first insulating layer, an acoustic wave element, a second insulating layer, a first intermediate layer, and a second intermediate layer. The first intermediate layer is interposed between the acoustic wave element and the semiconductor element, and has a thermal conductivity lower than the first and second insulating layers. The second intermediate layer is interposed between the first insulating layer and the second insulating layer, and has a thermal conductivity lower than the first and second insulating layers. A step is provided between a first principal surface of the first insulating layer and one principal surface of the semiconductor element. The distance between first and second principal surfaces of the first insulating layer is greater than the distance between the second principal surface of the first insulating layer and the one principal surface of the semiconductor element.
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Patent Agency Ranking
公开(公告)号：US20210366801A1
公开(公告)日：2021-11-25
申请号：US17395574
申请日：2021-08-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi IWAMOTO
IPC: H01L23/31 , H01L25/10 , H01L23/538 , H01L23/498 , H01L21/56 , H01L21/48 , H01L23/00
Abstract: A method of manufacturing an electronic component module includes a sacrificial-body arrangement step of disposing a sacrificial body on a first principal surface of a support, the support including the first principal surface and a second principal surface, the sacrificial body being smaller than the first principal surface when viewed in a thickness direction of the support, a resin molding step of molding a resin structure on the first principal surface so as to cover the sacrificial body disposed on the first principal surface, a recess forming step of forming a recess in the resin structure by removing the sacrificial body, a wiring-layer forming step of forming a wiring layer on a side surface of the recess and on a principal surface of the resin structure, the principal surface connecting with the side surface, and a component mounting step of mounting an electronic component in the recess.
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公开(公告)号：US20150008789A1
公开(公告)日：2015-01-08
申请号：US14493381
申请日：2014-09-23
Applicant: MURATA MANUFACTURING CO., LTD.
Inventor： Takashi IWAMOTO
CPC classification number: H01L41/0533 , H01L41/0805 , H01L41/25 , H01L2224/16225 , H03H3/02 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02984 , H03H9/0523 , H03H9/0576 , H03H9/059 , H03H9/1071 , H03H9/25 , H03H9/725 , Y10T29/42
Abstract: An elastic wave device includes elastic wave elements, each including a piezoelectric layer directly or indirectly supported by a supporting substrate and an electrode disposed in contact with the piezoelectric layer, and a highly heat-conductive member stacked on a surface of the supporting substrate, opposite to the surface supporting the piezoelectric layer, in which the thermal conductivity of the supporting substrate is higher than the thermal conductivity of the piezoelectric layer, the coefficient of linear expansion of the supporting substrate is lower than the coefficient of linear expansion of the piezoelectric layer, the highly heat-conductive member has a larger area than the surface of the supporting substrate supporting the piezoelectric layer, and the thermal conductivity of the highly heat-conductive member is higher than that of the piezoelectric layer.
Abstract translation: 弹性波装置包括弹性波元件，其包括由支撑基板直接或间接支撑的压电层和与压电层接触设置的电极，以及堆叠在支撑基板的表面上的高导热构件， 在支撑基板的热传导率高于压电体层的导热率的压电层的支撑面上，支撑基板的线膨胀系数低于压电体层的线膨胀系数， 高导热性部件的面积比支撑压电层的支撑基板的面积大，高导热性部件的导热率高于压电体层。
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公开(公告)号：US20140227434A1
公开(公告)日：2014-08-14
申请号：US14254083
申请日：2014-04-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi IWAMOTO
IPC: H01L41/314
CPC classification number: H01L41/314 , H01L41/053 , H01L41/0815 , H01L41/18 , H01L41/27 , H01L41/313 , H03H3/02 , H03H3/08 , H03H9/02921 , H03H9/25
Abstract: In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film to the piezoelectric thin film during heat treatment of a piezoelectric device. This prevents oxidation of the piezoelectric thin film and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film. As a result, a pyroelectric charge generated in the piezoelectric thin film can flow to the silicon oxide film.
Abstract translation: 在制造压电元件的方法中，通过溅射将氧化硅膜沉积在更靠近离子注入区域的单晶体压电基片的表面上，通过溅射将氮化硅膜沉积在电介质的表面上 膜的与其更靠近单晶压电基板的一侧相反。 氧化硅膜具有相对于化学计量组成不足氧的组成。 因此，在压电器件的热处理期间，从氧化硅膜向压电薄膜供给的氧少。 这样就可以防止压电薄膜的氧化，从而在压电薄膜中形成具有高电阻率的氧化物层。 结果，在压电薄膜中产生的热电荷可以流到氧化硅膜。
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公开(公告)号：US20140130319A1
公开(公告)日：2014-05-15
申请号：US13850513
申请日：2013-03-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi IWAMOTO
IPC: H03H3/02
CPC classification number: H03H3/02 , H01L21/02697 , H01L41/312 , H01L41/37 , H01L2224/11 , H03H3/08 , H03H9/02543 , H03H9/02574 , H03H9/059 , H03H9/173 , H03H9/174 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/49005 , Y10T29/49124
Abstract: In a method of manufacturing a piezoelectric device, a compressive stress film is formed on a back surface of a piezoelectric single crystal substrate opposite to a surface on an ion-implanted side. The compressive stress film compresses the surface on the ion-implanted side of the piezoelectric single crystal substrate. The compressive stress produced by the compressive stress film is applied to half of the piezoelectric single crystal substrate on the ion-implanted side with respect to the center line of the thickness of the piezoelectric single crystal substrate to prevent the piezoelectric single crystal substrate from warping. A supporting substrate is then bonded to the surface of a bonding film on the flat piezoelectric single crystal substrate. The joined body of the piezoelectric single crystal substrate and the supporting substrate is then heated to initiate isolation at the ion-implanted portion as the isolation plane.
Abstract translation: 在制造压电元件的方法中，在与离子注入侧的表面相对的压电单晶基板的背面上形成压应力膜。 压缩应力膜压缩压电单晶衬底的离子注入侧的表面。 将压电应力膜产生的压应力相对于压电单晶基板的厚度的中心线施加到离子注入侧的压电单晶基板的一半，以防止压电单晶基板翘曲。 然后将支撑衬底接合到平坦压电单晶衬底上的接合膜的表面。 然后将压电单晶基板和支撑基板的接合体加热，以在离子注入部分作为隔离平面启动隔离。
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公开(公告)号：US20140009036A1
公开(公告)日：2014-01-09
申请号：US14023761
申请日：2013-09-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi IWAMOTO
IPC: H01L41/053 , H01L41/27 , H01L41/18
CPC classification number: H01L41/314 , H01L41/053 , H01L41/0815 , H01L41/18 , H01L41/27 , H01L41/313 , H03H3/02 , H03H3/08 , H03H9/02921 , H03H9/25
Abstract: In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film to the piezoelectric thin film during heat treatment of a piezoelectric device. This prevents oxidation of the piezoelectric thin film and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film. As a result, a pyroelectric charge generated in the piezoelectric thin film can flow to the silicon oxide film.
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