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公开(公告)号：US20240030893A1
公开(公告)日：2024-01-25
申请号：US18374116
申请日：2023-09-28
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takeshi NAKAO , Seiji KAI , Hisashi YAMAZAKI
CPC classification number: H03H9/205 , H03H9/02015 , H03H9/02228 , H03H9/568
Abstract: An acoustic wave device includes a piezoelectric substrate including a support and a piezoelectric layer provided on the support and including first and second main surfaces, one or more functional electrodes provided on the first or second main surface, and including at least one pair of electrodes, a first support provided on the piezoelectric substrate so as to surround the functional electrodes, one or more second supports provided on the piezoelectric substrate and on a portion surrounded by the first support, and a cover on the first support and the second supports. A direction in which adjacent electrodes face each other is an electrode facing direction, a region in which the adjacent electrodes overlap each other when viewed from the electrode facing direction is an intersecting region, and the second support at least partially overlaps the intersecting region when viewed from the electrode facing direction.
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公开(公告)号：US20240014799A1
公开(公告)日：2024-01-11
申请号：US18369895
申请日：2023-09-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takeshi NAKAO , Seiji KAI , Hisashi YAMAZAKI
CPC classification number: H03H9/132 , H03H9/02015 , H03H9/02157 , H03H9/133 , H03H9/205 , H03H9/605
Abstract: An acoustic wave device includes a piezoelectric substrate including a support including a support substrate and a piezoelectric layer on the support and including first and second main surfaces, a functional electrode on the first or second main surface and including a pair of electrodes, a first support on the piezoelectric substrate and surrounding the functional electrode, at least one second support on the piezoelectric substrate in a portion surrounded by the first support, and a lid on the first and second supports. The second support does not overlap an intersecting region when viewed from an electrode extending direction and from an electrode facing direction.
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公开(公告)号：US20230155565A1
公开(公告)日：2023-05-18
申请号：US18096618
申请日：2023-01-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Minefumi OUCHI , Takeshi NAKAO
CPC classification number: H03H9/0211 , H03H9/568 , H03H9/17 , H03H9/133 , H03H9/02031
Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, a functional electrode on the piezoelectric layer, first and second electrode films on the piezoelectric layer, facing each other, and having different electric potentials from each other, and a dielectric film between at least one of at least a portion of the first electrode film and the piezoelectric layer and at least a portion of the second electrode film and the piezoelectric layer.
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公开(公告)号：US20210408994A1
公开(公告)日：2021-12-30
申请号：US17471221
申请日：2021-09-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shou NAGATOMO , Hideki IWAMOTO , Takeshi NAKAO
Abstract: An acoustic wave device includes a support substrate, a piezoelectric film, a functional electrode, and a support. The support substrate includes a cavity. The piezoelectric film is provided on the support substrate to cover the cavity. The functional electrode is provided on the piezoelectric film to overlap the cavity when viewed in a plan view. The support is in the cavity of the support substrate to support the piezoelectric film. The functional electrode includes electrodes arranged in a direction crossing the thickness direction of the piezoelectric film. The electrodes include a first electrode and a second electrode. The first electrode and the second electrode oppose each other in a direction crossing the thickness direction of the piezoelectric film and are connected to different potentials. Adjacent ones of the electrodes overlap each other in a direction orthogonal to a longitudinal direction of the first electrode.
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公开(公告)号：US20240007076A1
公开(公告)日：2024-01-04
申请号：US18369893
申请日：2023-09-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Seiji KAI , Hisashi YAMAZAKI , Takeshi NAKAO , Takuya KOYANAGI
CPC classification number: H03H9/02228 , H03H9/02015 , H03H9/173 , H03H9/131
Abstract: An acoustic wave device includes a piezoelectric substrate including a support including a support substrate and a piezoelectric layer on the support, a functional electrode on the piezoelectric layer, at least one support, and a lid. One of the at least one support surrounds the functional electrode on the piezoelectric substrate and the lid is provided on the support. A first cavity is provided in the support. The first cavity overlaps at least a portion of the functional electrode in plan view. A second cavity is surrounded by the piezoelectric substrate, a support provided between the piezoelectric substrate and the lid, and the lid. A height of the first cavity is greater than a height of the second cavity.
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Patent Agency Ranking
公开(公告)号：US20220321097A1
公开(公告)日：2022-10-06
申请号：US17706723
申请日：2022-03-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hisashi YAMAZAKI , Seiji KAI , Takeshi NAKAO
Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, a functional electrode at the piezoelectric layer, a frame-shaped support frame on the piezoelectric layer and surrounding the functional electrode in a plan view in a stacking direction of the support and the piezoelectric layer, and a lid covering an opening of the support frame, wherein the support includes a first cavity at a position overlapping at least a portion of the functional electrode in the plan view, a second cavity defined by the piezoelectric layer, the support frame, and the lid between the piezoelectric layer and the lid, the piezoelectric layer includes a through hole communicating with the first and second cavities, and the first and second cavities are under vacuum.
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公开(公告)号：US20220321091A1
公开(公告)日：2022-10-06
申请号：US17706722
申请日：2022-03-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hisashi YAMAZAKI , Seiji KAI , Takeshi NAKAO
Abstract: An acoustic wave device includes a support, a piezoelectric layer on the support, a functional electrode at the piezoelectric layer, a frame-shaped support frame on the piezoelectric layer and surrounding the functional electrode in plan view in a stacking direction of the support and the piezoelectric layer, and a lid covering an opening of the support frame, wherein the support includes a first cavity overlapping at least a portion of the functional electrode in the plan view, a second cavity defined by the piezoelectric layer, the support frame, and the lid between the piezoelectric layer and the lid, the piezoelectric layer includes a through hole communicating with the first and second cavities, and a gas is provided in the first and second cavities.
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公开(公告)号：US20220029599A1
公开(公告)日：2022-01-27
申请号：US17492750
申请日：2021-10-04
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hideki IWAMOTO , Akira MICHIGAMI , Tsutomu TAKAI , Takeshi NAKAO
Abstract: An acoustic wave device includes a support substrate including silicon, a piezoelectric layer in which a rotated Y-cut X-propagation lithium tantalate is included, and an IDT electrode. A film thickness of the piezoelectric layer is less than or equal to about 1λ. When α111 is an angle between a directional vector k111, and a direction of silicon and n is an arbitrary integer, the angle α111 is in a range of about 0°+120°×n≤α111≤45°+120°×n or in a range of about 75°+120°×n≤α111≤120°+120°×n when the IDT electrode is on a positive surface of the piezoelectric layer and the angle α111 is in a range of about 15°+120°×n≤α111≤105°+120°×n when the IDT electrode is on the negative surface of the piezoelectric layer.
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公开(公告)号：US20240056050A1
公开(公告)日：2024-02-15
申请号：US18383925
申请日：2023-10-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Tetsuya KIMURA , Yutaka KISHIMOTO , Takeshi NAKAO
CPC classification number: H03H9/132 , H03H9/02015 , H03H9/605
Abstract: An acoustic wave device includes a piezoelectric board including a piezoelectric layer with a first principal surface and a second principal surface opposed to each other, an intermediate layer on the first principal surface or the second principal surface of the piezoelectric layer, and a functional electrode on the intermediate layer. A material of the intermediate layer is a same type as a material of the piezoelectric layer, and an electromechanical coupling coefficient of the intermediate layer is smaller than an electromechanical coupling coefficient of the piezoelectric layer.
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公开(公告)号：US20240030890A1
公开(公告)日：2024-01-25
申请号：US18374114
申请日：2023-09-28
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takeshi NAKAO , Seiji KAI , Hisashi YAMAZAKI
CPC classification number: H03H9/132 , H03H9/02015 , H03H9/02157 , H03H9/205
Abstract: An acoustic wave device includes a piezoelectric substrate including a support and a piezoelectric layer on the support and including first and second main surfaces, one or more functional electrodes on the first or second main surfaces, and including at least one pair of electrodes, a first support surrounding the functional electrodes, one or more second supports on the piezoelectric substrate and on a portion surrounded by the first support, and a cover on the first and second supports. A direction in which adjacent electrodes face each other is an electrode facing direction, a region in which the adjacent electrodes overlap each other when viewed from the electrode facing direction is an intersecting region, a direction in which at least one pair of electrodes extend is an electrode extending direction, and the second support at least partially overlaps the intersecting region when viewed from the electrode extending direction.
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