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    Semiconductor memory devices including offset bit lines
    1.
    发明授权
    Semiconductor memory devices including offset bit lines 有权
    包括偏移位线的半导体存储器件

    公开(公告)号：US08013374B2

    公开(公告)日：2011-09-06

    申请号：US12465202

    申请日：2009-05-13

    Applicant: Doo-Hoon Goo ,  Han-Ku Cho ,  Joo-Tae Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

    Inventor： Doo-Hoon Goo ,  Han-Ku Cho ,  Joo-Tae Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

    IPC: H01L27/108

    CPC classification number: H01L27/10814 ,  H01L27/0207 ,  H01L27/10882 ,  H01L27/11502

    Abstract: A semiconductor memory device may include a substrate having a plurality of active regions wherein each active region has a length in a direction of a first axis and a width in a direction of a second axis. The length may be greater than the width, and the plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis. A plurality of wordline pairs may be provided on the substrate, with each wordline pair crossing active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. A plurality of bitlines on the substrate may cross the plurality of wordline pairs, with each bitline being electrically coupled to a respective drain portion of an active region of each column, and with each bitline being arranged between the respective drain portion and another drain portion of an adjacent active region of the same column.

    Abstract translation: 半导体存储器件可以包括具有多个有源区的衬底，其中每个有源区具有在第一轴的方向上的长度和在第二轴的方向上的宽度。 长度可以大于宽度，并且多个有源区可以在第二轴的方向上设置在多个有效区列中。 可以在衬底上提供多个字线对，其中每个字线对跨越相应的有效区域列的有源区域，在相应字线对的字线之间限定每个有效区域的漏极部分。 衬底上的多个位线可以跨过多个字线对，每个位线电耦合到每个列的有源区的相应漏极部分，并且每个位线布置在相应的漏极部分和另一个漏极部分的另一个漏极部分之间 相同列的相邻有效区域。

    Methods of forming fine patterns using a nanoimprint lithography
    2.
    发明申请
    Methods of forming fine patterns using a nanoimprint lithography 失效
    使用纳米压印光刻形成精细图案的方法

    公开(公告)号：US20100190340A1

    公开(公告)日：2010-07-29

    申请号：US12657750

    申请日：2010-01-27

    Applicant: Jeong-Hoon Lee ,  Jeong-Ho Yeo ,  Joo-On Park ,  In-Sung Kim ,  Doo-Hoon Goo ,  Jin-Hong Park ,  Chang-Min Park

    Inventor： Jeong-Hoon Lee ,  Jeong-Ho Yeo ,  Joo-On Park ,  In-Sung Kim ,  Doo-Hoon Goo ,  Jin-Hong Park ,  Chang-Min Park

    IPC: H01L21/306 ,  B29C43/00 ,  C23F1/00

    CPC classification number: G03F7/0002 ,  B29C43/003 ,  B29C2043/025 ,  B82Y10/00 ,  B82Y40/00

    Abstract: In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.

    Abstract translation: 在形成精细图案的方法中，在基板上形成光固化涂层。 模板的第一表面与光固化涂层接触。 模板的第一表面包括具有第一分散度大小的至少两个第一图案，并且模板的第一表面的至少一部分包括光衰减构件。 通过模板将光照射到可光固化涂层上，以形成具有第二分散度尺寸的第二图案的固化涂层。 从第一图案生成第二图案，第二色散度小于第一色散度。 模板与固化涂层分开。 可以通过光衰减部件调整在纳米压印光刻工艺中使用的图案的尺寸分散度，使得精细图案可以形成为具有改进的尺寸分散度。

    Methods and apparatus for aligning a wafer in which multiple light beams are used to scan alignment marks
    4.
    发明授权
    Methods and apparatus for aligning a wafer in which multiple light beams are used to scan alignment marks 失效
    用于对准使用多个光束来扫描对准标记的晶片的方法和装置

    公开(公告)号：US07068371B2

    公开(公告)日：2006-06-27

    申请号：US10606050

    申请日：2003-06-25

    Applicant: Doo-Hoon Goo

    Inventor： Doo-Hoon Goo

    IPC: G01B11/00

    CPC classification number: H01L23/544 ,  H01L21/681 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A wafer, having alignment marks formed thereon, is aligned by radiating a first light beam onto the alignment marks so as to generate a first diffracted light beam. The first diffracted light beam is sensed at a first position. A second light beam is radiated onto the alignment marks so as to generate a second diffracted light beam. The second diffracted light beam is sensed at a second position. A correction value is calculated based on a first difference between the first position and a first predetermined position and a second difference is calculated based on a second difference between the second position and a second predetermined position. The wafer is aligned based on the correction value.

    Abstract translation: 在其上形成有对准标记的晶片通过将第一光束照射到对准标记上而被排列，以便产生第一衍射光束。 在第一位置处感测第一衍射光束。 将第二光束照射到对准标记上，以产生第二衍射光束。 在第二位置处感测第二衍射光束。 基于第一位置和第一预定位置之间的第一差异来计算校正值，并且基于第二位置和第二预定位置之间的第二差异来计算第二差异。 基于校正值对准晶片。

    Method of forming trench in semiconductor device
    5.
    发明申请
    Method of forming trench in semiconductor device 失效
    在半导体器件中形成沟槽的方法

    公开(公告)号：US20050266646A1

    公开(公告)日：2005-12-01

    申请号：US11080891

    申请日：2005-03-16

    Applicant: Doo-hoon Goo ,  Si-hyeung Lee ,  Han-ku Cho ,  Sang-gyun Woo ,  Gi-sung Yeo

    Inventor： Doo-hoon Goo ,  Si-hyeung Lee ,  Han-ku Cho ,  Sang-gyun Woo ,  Gi-sung Yeo

    IPC: H01L21/76 ,  H01L21/00 ,  H01L21/308 ,  H01L21/8242 ,  H01L27/02

    CPC classification number: H01L27/10876 ,  H01L21/3083 ,  H01L27/0207

    Abstract: There are provided a method of forming a trench for a recessed channel of a transistor and a layout for the same. A layout for the recessed channel according to one aspect of the present invention is formed such that an open region is extended across at least one of a first active region in a lateral direction, and also across another second active region in parallel with the first active region in a diagonal direction, and the extension is cut not to reach an isolation region between two third active regions that are in parallel with the second active region in a diagonal direction, and have noses facing each other in a longitudinal direction, and the layout includes an alignment of a plurality of open regions, which are discontinuously aligned. An etch mask is formed using the layout, and a semiconductor substrate is etched using the etch mask, and a trench for a recessed channel is formed on the active region.

    Abstract translation: 提供了一种形成用于晶体管的凹槽的沟槽的方法及其布局。 根据本发明的一个方面的凹陷通道的布局被形成为使得开放区域跨越横向方向上的第一有源区域中的至少一个延伸，并且还跨越与第一活性物体平行的另一个第二有源区域 区域，并且延伸部被切割成不能在对角线方向上到达与第二有源区域平行的两个第三有源区域之间的隔离区域，并且在纵向方向上具有彼此面对的鼻子，并且布局 包括不连续对准的多个开放区域的对准。 使用布局形成蚀刻掩模，并且使用蚀刻掩模蚀刻半导体衬底，并且在有源区上形成用于凹陷沟道的沟槽。

    Single aperture optical system for photolithography systems
    7.
    发明授权
    Single aperture optical system for photolithography systems 失效
    用于光刻系统的单孔光学系统

    公开(公告)号：US06757052B2

    公开(公告)日：2004-06-29

    申请号：US10162601

    申请日：2002-06-06

    Applicant: Doo-Hoon Goo ,  Jin-Jun Park

    Inventor： Doo-Hoon Goo ,  Jin-Jun Park

    IPC: G03B2754

    CPC classification number: G03F7/701 ,  G03F7/70108 ,  G03F7/70183

    Abstract: Methods and apparatus for varying the number and intensity of beams of a photo-lithographic light source for exposing photoresist materials include beam dividers and beam focusing means. Methods include producing an incident light beam having uniform intensity distribution, refracting the incident light beam into a plurality of divergent beams, refracting the plurality of divergent beams into a plurality of parallel beams, and exposing an object with light of the plurality of parallel beams. Apparatus includes source of light beam having uniform intensity distribution, first refracting element for refracting the light beam into a plurality of divergent beams, second refracting element for refracting the plurality of divergent beams into a plurality of parallel beams, and means for exposing the object with light of the plurality of parallel beams. Variations in the separations of the refractive elements allows for the control of the size, shape, and dispersion patterns of resultant beams.

    Abstract translation: 用于改变用于曝光光刻胶材料的光刻光源的光束的数量和强度的方法和装置包括分光器和光束聚焦装置。 方法包括产生具有均匀强度分布的入射光束，将入射光束折射成多个发散光束，将多个发散光束折射成多个平行光束，并用多个平行光束的光曝光物体。 设备包括具有均匀强度分布的光束源，用于将光束折射成多个发散光束的第一折射元件，用于将多个发散光束折射成多个平行光束的第二折射元件，以及用于将物体曝光 多个平行光束的光。 折射元件分离的变化允许控制合成光束的尺寸，形状和色散图案。

    Semiconductor Memory Devices Including Offset Bit Lines
    9.
    发明申请
    Semiconductor Memory Devices Including Offset Bit Lines 有权
    包括偏移位线的半导体存储器件

    公开(公告)号：US20090218609A1

    公开(公告)日：2009-09-03

    申请号：US12465202

    申请日：2009-05-13

    Applicant: Doo-Hoon Goo ,  Han-Ku Cho ,  Joo-Tae Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

    Inventor： Doo-Hoon Goo ,  Han-Ku Cho ,  Joo-Tae Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

    IPC: H01L27/108

    CPC classification number: H01L27/10814 ,  H01L27/0207 ,  H01L27/10882 ,  H01L27/11502

    Abstract: A semiconductor memory device may include a substrate having a plurality of active regions wherein each active region has a length in a direction of a first axis and a width in a direction of a second axis. The length may be greater than the width, and the plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis. A plurality of wordline pairs may be provided on the substrate, with each wordline pair crossing active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. A plurality of bitlines on the substrate may cross the plurality of wordline pairs, with each bitline being electrically coupled to a respective drain portion of an active region of each column, and with each bitline being arranged between the respective drain portion and another drain portion of an adjacent active region of the same column.

    Abstract translation: 半导体存储器件可以包括具有多个有源区的衬底，其中每个有源区具有在第一轴的方向上的长度和在第二轴的方向上的宽度。 长度可以大于宽度，并且多个有源区可以在第二轴的方向上设置在多个有效区列中。 可以在衬底上提供多个字线对，其中每个字线对跨越相应的有效区域列的有源区域，在相应字线对的字线之间限定每个有效区域的漏极部分。 衬底上的多个位线可以跨过多个字线对，每个位线电耦合到每个列的有源区的相应漏极部分，并且每个位线布置在相应的漏极部分和另一个漏极部分的另一个漏极部分之间 相同列的相邻有效区域。

    Methods of forming fine patterns using a nanoimprint lithography
    10.
    发明授权
    Methods of forming fine patterns using a nanoimprint lithography 失效
    使用纳米压印光刻形成精细图案的方法

    公开(公告)号：US08287792B2

    公开(公告)日：2012-10-16

    申请号：US12657750

    申请日：2010-01-27

    Applicant: Jeong-Hoon Lee ,  Jeong-Ho Yeo ,  Joo-On Park ,  In-Sung Kim ,  Doo-Hoon Goo ,  Jin-Hong Park ,  Chang-Min Park

    Inventor： Jeong-Hoon Lee ,  Jeong-Ho Yeo ,  Joo-On Park ,  In-Sung Kim ,  Doo-Hoon Goo ,  Jin-Hong Park ,  Chang-Min Park

    IPC: B29C59/00

    CPC classification number: G03F7/0002 ,  B29C43/003 ,  B29C2043/025 ,  B82Y10/00 ,  B82Y40/00

    Abstract: In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.

    Abstract translation: 在形成精细图案的方法中，在基板上形成光固化涂层。 模板的第一表面与光固化涂层接触。 模板的第一表面包括具有第一分散度大小的至少两个第一图案，并且模板的第一表面的至少一部分包括光衰减构件。 通过模板将光照射到可光固化涂层上，以形成具有第二分散度尺寸的第二图案的固化涂层。 从第一图案生成第二图案，第二色散度小于第一色散度。 模板与固化涂层分开。 可以通过光衰减部件调整在纳米压印光刻工艺中使用的图案的尺寸分散度，使得精细图案可以形成为具有改进的尺寸分散度。

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