摘要:
There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.
摘要:
There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.
摘要:
There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.
摘要:
There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.
摘要:
A technique which reduces the influence of external noise such as crosstalk noise in a semiconductor device to prevent a circuit from malfunctioning. A true signal wire and a bar signal wire which are susceptible to noise and part of an input signal line to a level shifter circuit, and shield wires for shielding these signal wires are laid on an I/O cell. Such I/O cells are placed side by side to complete a true signal wire connection and a bar signal wire connection. These wires are arranged in a way to pass over a plurality of I/O cells and are parallel to each other or multilayered.
摘要:
A technique which reduces the influence of external noise such as crosstalk noise in a semiconductor device to prevent a circuit from malfunctioning. A true signal wire and a bar signal wire which are susceptible to noise and part of an input signal line to a level shifter circuit, and shield wires for shielding these signal wires are laid on an I/O cell. Such I/O cells are placed side by side to complete a true signal wire connection and a bar signal wire connection. These wires are arranged in a way to pass over a plurality of I/O cells and are parallel to each other or multilayered.
摘要:
A technique which reduces the influence of external noise such as crosstalk noise in a semiconductor device to prevent a circuit from malfunctioning. A true signal wire and a bar signal wire which are susceptible to noise and part of an input signal line to a level shifter circuit, and shield wires for shielding these signal wires are laid on an I/O cell. Such I/O cells are placed side by side to complete a true signal wire connection and a bar signal wire connection. These wires are arranged in a way to pass over a plurality of I/O cells and are parallel to each other or multilayered.
摘要:
A communication system, includes: a node that requests a processing rule for processing a packet; and a control apparatus that notifies the node of the processing rule in response to the request. The control apparatus, upon being notified of change of a connection relationship between a communication apparatus to which a packet is addressed and the node, determines a forwarding path for a packet addressed to the communication apparatus and notifies the node of a processing rule for realizing the forwarding path.
摘要:
Provided is a system which distributes a processing load of security measures and enforce a security policy to be applicable to a large system. Policy information indicating a security measure to be executed on user information transmitted from a client to a server is stored in a policy storing section. Measure arrangement information indicating the security measure executable in each of a plurality of policy enforcement sections is stored in a measure-arrangement storing section. One or more of the policy enforcement sections are selected on the basis of the policy information and the measure arrangement information. Each of the one or more policy enforcement sections executes the security measure on the user information and outputs, on the basis of a selection result, the user information to the other policy enforcement sections among the one or more policy enforcement sections or to the server.
摘要:
The present invention relates to a novel secretory signal, a novel plasmid containing the secretory signal, a transformed anaerobic bacterium transformed with said plasmid, a gene transfer carrier consisting of said anaerobic bacterium, and a pharmaceutical composition containing said carrier.