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    METHOD OF MAKING LESS ELECTRIC CURRENT DEPENDENCE OF ELECTRIC CURRENT GAIN OF SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF MAKING LESS ELECTRIC CURRENT DEPENDENCE OF ELECTRIC CURRENT GAIN OF SEMICONDUCTOR DEVICE 有权
    制造电流电流增益半导体器件的电流依赖性的方法

    公开(公告)号：US20140030878A1

    公开(公告)日：2014-01-30

    申请号：US14039719

    申请日：2013-09-27

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Yutaka Hayashi ,  Yasushi Nagamune ,  Toshitaka Ota

    IPC: H01L29/66

    CPC classification number: H01L29/66234 ,  H01L29/0692 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66272 ,  H01L29/7322

    Abstract: An object of the present invention is to amplify the current which varies by a factor of several orders of magnitude with a constant gain without using a complicated circuit. In order to solve the problem, with a semiconductor device includes a first semiconductor region of a first conductivity, a second semiconductor region which is an opposite conductivity opposite to the first conductivity and is in contact with the first semiconductor region and a third semiconductor region which is the first conductivity and is in contact with the second semiconductor region at the second surface, a fourth semiconductor region in contact with the second semiconductor region is provided so as to be separated from the third semiconductor region and enclose the third semiconductor region and an impurity concentration of the fourth semiconductor region is larger than that of the second semiconductor region.

    Abstract translation: 本发明的目的是在不使用复杂电路的情况下以恒定增益来放大以几个数量级的因子变化的电流。 为了解决这个问题，半导体器件包括第一导电性的第一半导体区域，与第一导电性相反的导电性并与第一半导体区域接触的第二半导体区域和第三半导体区域，第三半导体区域 是第一导电性并且在第二表面与第二半导体区域接触，与第二半导体区域接触的第四半导体区域设置成与第三半导体区域分离并且包围第三半导体区域和杂质 第四半导体区域的浓度大于第二半导体区域的浓度。

    Method for resetting photoelectric conversion device, and photoelectric conversion device
    4.
    发明授权
    Method for resetting photoelectric conversion device, and photoelectric conversion device 有权
    光电转换装置复位方法及光电转换装置

    公开(公告)号：US09197220B2

    公开(公告)日：2015-11-24

    申请号：US13665037

    申请日：2012-10-31

    Applicant: National Institute of Advanced Industrial Science and Technology ,  RICOH COMPANY, LTD.

    Inventor： Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Kazunari Kimino

    IPC: H01L31/062 ,  H03L3/00 ,  H01L27/146

    CPC classification number: H03L3/00 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14681 ,  H01L31/062

    Abstract: A reset method of an photoelectric conversion device at least including a phototransistor having a first collector, a first base, and a first emitter, and a first field-effect transistor having a first source, a first drain, and a first gate, includes: connecting the first base, and one of the first source and the first drain of the first field-effect transistor by having a common region, or a continuous region, without a base electrode; supplying a base reset potential to the other of the first source and the first drain; and overlapping a time in which a first emitter potential is supplied to the first emitter and a time in which a first ON-potential that turns on the first field-effect transistor is supplied to the first gate.

    Abstract translation: 一种至少包括具有第一集电极，第一基极和第一发射极的光电晶体管以及具有第一源极，第一漏极和第一栅极的第一场效应晶体管的光电转换器件的复位方法，包括： 通过具有没有基极的公共区域或连续区域来连接第一基极和第一场效应晶体管的第一源极和第一漏极中的一个; 向第一源极和第一漏极中的另一个提供基极复位电位; 并且将第一发射极电位提供给第一发射极的时间与将第一场效应晶体管导通的第一导通电位提供给第一栅极的时间重叠。

    Method of making less electric current dependence of electric current gain of semiconductor device
    5.
    发明授权
    Method of making less electric current dependence of electric current gain of semiconductor device 有权
    使半导体器件的电流增益较小的电流依赖性的方法

    公开(公告)号：US08921213B2

    公开(公告)日：2014-12-30

    申请号：US14039719

    申请日：2013-09-27

    Applicant: National Institute of Advanced Industrial Science and Technology

    Inventor： Yutaka Hayashi ,  Yasushi Nagamune ,  Toshitaka Ota

    IPC: H01L21/04 ,  H01L29/66 ,  H01L29/08 ,  H01L29/417 ,  H01L29/732 ,  H01L29/10 ,  H01L21/02 ,  H01L21/18 ,  H01L29/06

    CPC classification number: H01L29/66234 ,  H01L29/0692 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/66272 ,  H01L29/7322

    Abstract: An object of the present invention is to amplify the current which varies by a factor of several orders of magnitude with a constant gain without using a complicated circuit. In order to solve the problem, with a semiconductor device includes a first semiconductor region of a first conductivity, a second semiconductor region which is an opposite conductivity opposite to the first conductivity and is in contact with the first semiconductor region and a third semiconductor region which is the first conductivity and is in contact with the second semiconductor region at the second surface, a fourth semiconductor region in contact with the second semiconductor region is provided so as to be separated from the third semiconductor region and enclose the third semiconductor region and an impurity concentration of the fourth semiconductor region is larger than that of the second semiconductor region.

    Abstract translation: 本发明的目的是在不使用复杂电路的情况下以恒定增益来放大以几个数量级的因子变化的电流。 为了解决这个问题，半导体器件包括第一导电性的第一半导体区域，与第一导电性相反的导电性并与第一半导体区域接触的第二半导体区域和第三半导体区域，第三半导体区域 是第一导电性并且在第二表面与第二半导体区域接触，与第二半导体区域接触的第四半导体区域设置成与第三半导体区域分离并且包围第三半导体区域和杂质 第四半导体区域的浓度大于第二半导体区域的浓度。

    PHOTOELECTRIC CONVERTER, PHOTOELECTRIC CONVERTER ARRAY AND IMAGING DEVICE
    6.
    发明申请
    PHOTOELECTRIC CONVERTER, PHOTOELECTRIC CONVERTER ARRAY AND IMAGING DEVICE 有权
    光电转换器，光电转换器阵列和成像装置

    公开(公告)号：US20140239158A1

    公开(公告)日：2014-08-28

    申请号：US14349414

    申请日：2012-10-05

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  Riccoh Company Ltd

    Inventor： Yutaka Hayashi ,  Toshitaka Ota ,  Yasushi Nagamune ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Kazunari Kimino

    IPC: H01L27/146 ,  H01L27/144

    CPC classification number: H01L27/14681 ,  H01L27/1443 ,  H01L27/14609 ,  H01L27/14656 ,  H04N5/3745 ,  H04N5/378

    Abstract: A photoelectric converter includes a first pn junction comprised of at least two semiconductor regions of different conductivity types, and a first field-effect transistor including a first source connected with one of the semiconductor regions, a first drain, a first insulated gate and a same conductivity type channel as that of the one of the semiconductor regions. The first drain is supplied with a second potential at which the first pn junction becomes zero-biased or reverse-biased relative to a potential of the other of the semiconductor regions. When the first source turns to a first potential and the one of the semiconductor regions becomes zero-biased or reverse-biased relative to the other semiconductor regions, the first pn junction is controlled not to be biased by a deep forward voltage by supplying a first gate potential to the first insulated gate, even when either of the semiconductor regions is exposed to light.

    Abstract translation: 光电转换器包括由至少两个不同导电类型的半导体区组成的第一pn结，以及包括与半导体区之一连接的第一源的第一场效应晶体管，第一漏极，第一绝缘栅极和 导电型沟道，与半导体区域中的一个相同。 第一漏极被提供有第二电位，在该第二电位处，第一pn结相对于另一个半导体区域的电位变为零偏置或反向偏置。 当第一源极变为第一电位并且半导体区域中的一个相对于其它半导体区域变为零偏置或反向偏置时，通过提供第一源极的第一电位，第一pn结被控制为不被深的正向电压偏置， 即使当半导体区域中的任一个暴露于光时，第一绝缘栅极的栅极电位。

    METHOD OF VARYING GAIN, VARIABLE GAIN PHOTOELECTRIC CONVERSION DEVICE, VARIABLE GAIN PHOTOELECTRIC CONVERSION CELL, VARIABLE GAIN PHOTOELECTRIC CONVERSION ARRAY, METHOD OF READING OUT THEREOF, AND CIRCUIT THEREOF
    7.
    发明申请
    METHOD OF VARYING GAIN, VARIABLE GAIN PHOTOELECTRIC CONVERSION DEVICE, VARIABLE GAIN PHOTOELECTRIC CONVERSION CELL, VARIABLE GAIN PHOTOELECTRIC CONVERSION ARRAY, METHOD OF READING OUT THEREOF, AND CIRCUIT THEREOF 有权
    改变增益，可变增益光电转换装置，可变增益光电转换单元，可变增益光电转换阵列，其读出方法及其电路的方法

    公开(公告)号：US20140008524A1

    公开(公告)日：2014-01-09

    申请号：US14027326

    申请日：2013-09-16

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Yutaka Hayashi ,  Yasushi Nagamune ,  Toshitaka Ota

    IPC: H04N5/378

    CPC classification number: H04N5/378 ,  H01L27/14609 ,  H04N5/355 ,  H04N5/374

    Abstract: Expansion of the dynamic range was difficult in conventional amplifying photoelectric conversion devices designed to have a large gain because, when used for high input light intensity, the electric current exceeds the electric current capacity of a near-minimum sized transistor obtained with the design rules. Also, in conventional photoelectric conversion devices, techniques for varying the electric signal outputs in real-time at the device level are necessary for real-time import of observation targets or images having a high contrast ratio and for visualization of local areas in real-time. In order to solve this problem, the present invention provides a gain varying method, a variable gain photoelectric conversion device, a photoelectric conversion cell, a photoelectric conversion array, a read-out method thereof, and a circuit therefor in which amplifying photoelectric conversion devices and field-effect transistors are combined.

    Abstract translation: 传统的放大光电转换器件的设计具有很大的增益，因为在高输入光强度下使用的电流超过了设计规则所得到的最小尺寸的晶体管的电流容量，所以动态范围的扩大是困难的。 此外，在传统的光电转换装置中，实时地在设备级别改变电信号输出的技术对于实时导入具有高对比度的观察目标或图像以及实时可视化局部区域是必要的 。 为了解决这个问题，本发明提供一种增益变化方法，可变增益光电转换装置，光电转换单元，光电转换阵列，读出方法及其电路，其中放大光电转换装置 和场效应晶体管组合。

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