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1.
公开(公告)号:US20150251904A1
公开(公告)日:2015-09-10
申请号:US14425966
申请日:2013-09-25
申请人: MITSUBISHI HEAVY INDUSTRIES, LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人: Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki , Keiichiro Tsutsumi , Hideki Takagi , Yuuichi Kurashima
CPC分类号: B81C3/001 , B23K20/00 , B23K20/008 , B81C99/0025 , H01L21/2007 , H01L21/67092 , H01L21/67207
摘要: A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.
摘要翻译: 室温接合装置包括第一光束源,第二光束源和压接机构。 第一光束源发射照射第一衬底的第一表面的第一激活光束。 独立于第一光束源,第二光束源发射照射第二衬底的第二表面的第二激活光束。 压接机构通过在第一表面被第一激活光束照射并且第二表面被第二激活光束照射之后通过第一表面和第二表面之间的接触而在第一基板和第二基板之间接合。 因此,将由不同材料制成的多个基板适当地接合。
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公开(公告)号:US09751754B2
公开(公告)日:2017-09-05
申请号:US15112222
申请日:2015-01-27
发明人: Yuuichi Kurashima , Hideki Takagi , Atsuhiko Maeda
IPC分类号: B81C1/00
CPC分类号: B81C1/00269 , B81C2203/0118 , B81C2203/019 , B81C2203/035
摘要: This invention includes a sacrificial thin film formation step for chemical-mechanical polishing a temporary substrate made of a readily polishable material and sputtering a metal thin film along the smoothly polished surface, and a first bonding step for forming a sealing frame obtained by bringing at least a noble metal on the metal thin film and bonding a substrate on the sealing frame. This invention also includes a temporary substrate removal step for then removing the metal thin film along with the temporary substrate and exposing a new surface at the tip of the sealing frame; and a second bonding step for sputtering a noble metal thin film around a precision machine element on the machine substrate, bringing the new surface of the sealing frame into contact onto the noble metal thin film and bonding the new surface of the sealing frame onto the noble metal thin film at room temperature.
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公开(公告)号:US10112376B2
公开(公告)日:2018-10-30
申请号:US15149891
申请日:2016-05-09
申请人: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人: Jun Utsumi , Takayuki Goto , Kensuke Ide , Masahiro Funayama , Hideki Takagi
IPC分类号: B23K20/00 , B32B38/00 , B23K20/02 , B23K20/22 , B81C3/00 , B32B37/14 , C23C14/14 , C23C14/34 , C23C14/58
摘要: An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO2 substrates) are bonded at room-temperature to have practical bonding strength.
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公开(公告)号:US10189203B2
公开(公告)日:2019-01-29
申请号:US15029481
申请日:2014-08-29
IPC分类号: B29C59/02 , G03F7/00 , B29C35/08 , B29C43/02 , B29C43/52 , G03F7/038 , C08L79/08 , B29K79/00
摘要: Provided is a method for forming a pattern of polyimide that is simpler and is more excellent in the pattern shape and in the dimensional accuracy in comparison with the conventional techniques of patterning polyimide, such as photolithography and laser processing. In a method for forming a micropattern of polyimide, which includes using as polyimide a solvent-soluble polyimide resin composition that is photosensitive and is moldable at a temperature of less than or equal to a glass-transition temperature; patterning the composition using thermal imprinting; and thermally curing the composition, ultraviolet irradiation is performed after the composition is released from a mold after a molding step.
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公开(公告)号:US09761479B2
公开(公告)日:2017-09-12
申请号:US14902764
申请日:2014-07-03
申请人: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI , SICOXS CORPORATION , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人: Ko Imaoka , Motoki Kobayashi , Hidetsugu Uchida , Kuniaki Yagi , Takamitsu Kawahara , Naoki Hatta , Akiyuki Minami , Toyokazu Sakata , Tomoatsu Makino , Hideki Takagi , Yuuichi Kurashima
CPC分类号: H01L21/76251 , H01L21/02002 , H01L21/187 , H01L21/2007 , H01L21/76254 , H01L29/1608
摘要: A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.
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公开(公告)号:US09929311B2
公开(公告)日:2018-03-27
申请号:US14777176
申请日:2014-07-16
申请人: MARUBUN CORPORATION , TOSHIBA KIKAI KABUSHIKI KAISHA , RIKEN , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , ULVAC, INC. , TOKYO OHKA KOGYO CO., LTD.
发明人: Yukio Kashima , Eriko Matsuura , Mitsunori Kokubo , Takaharu Tashiro , Takafumi Ookawa , Hideki Hirayama , Sung Won Youn , Hideki Takagi , Ryuichiro Kamimura , Yamato Osada , Satoshi Shimatani
CPC分类号: H01L33/22 , G06F17/10 , G06F17/5009 , H01L33/24 , H01L33/44 , H01L33/502 , H01L2933/0083
摘要: A semiconductor light emitting element with a design wavelength of λ, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength λ satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength λ becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.
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7.
公开(公告)号:US09580306B2
公开(公告)日:2017-02-28
申请号:US14425966
申请日:2013-09-25
申请人: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
发明人: Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki , Keiichiro Tsutsumi , Hideki Takagi , Yuuichi Kurashima
CPC分类号: B81C3/001 , B23K20/00 , B23K20/008 , B81C99/0025 , H01L21/2007 , H01L21/67092 , H01L21/67207
摘要: A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.
摘要翻译: 室温接合装置包括第一光束源,第二光束源和压接机构。 第一光束源发射照射第一衬底的第一表面的第一激活光束。 独立于第一光束源,第二光束源发射照射第二衬底的第二表面的第二激活光束。 压接机构通过在第一表面被第一激活光束照射并且第二表面被第二激活光束照射之后通过第一表面和第二表面之间的接触而在第一基板和第二基板之间接合。 因此,将由不同材料制成的多个基板适当地接合。
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公开(公告)号:US20160263814A1
公开(公告)日:2016-09-15
申请号:US15029481
申请日:2014-08-29
CPC分类号: B29C59/022 , B29C35/0805 , B29C43/021 , B29C43/52 , B29C2035/0827 , B29C2043/025 , B29C2059/023 , B29K2079/08 , C08L79/08 , G03F7/0002 , G03F7/0387
摘要: Provided is a method for forming a pattern of polyimide that is simpler and is more excellent in the pattern shape and in the dimensional accuracy in comparison with the conventional techniques of patterning polyimide, such as photolithography and laser processing. In a method for forming a micropattern of polyimide, which includes using as polyimide a solvent-soluble polyimide resin composition that is photosensitive and is moldable at a temperature of less than or equal to a glass-transition temperature; patterning the composition using thermal imprinting; and thermally curing the composition, ultraviolet irradiation is performed after the composition is released from a mold after a molding step.
摘要翻译: 提供了一种形成聚酰亚胺图案的方法,其与诸如光刻和激光加工的常规聚酰亚胺技术相比,更简单并且在图案形状和尺寸精度方面更优异。 在形成聚酰亚胺微图案的方法中,其包括使用作为聚酰亚胺的溶剂可溶性聚酰亚胺树脂组合物,所述聚酰亚胺树脂组合物是光敏的并且可以在低于或等于玻璃化转变温度的温度下成型; 使用热压印图案化组合物; 并对组合物进行热固化,在成型步骤后从模具中脱模后进行紫外线照射。
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