Light-emitting element and method for producing the same

    公开(公告)号:US10134944B2

    公开(公告)日:2018-11-20

    申请号:US15957692

    申请日:2018-04-19

    Abstract: A light-emitting element includes: a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of projections on the principal surface, wherein each of the plurality of projections has a shape of pseudo-hexagonal pyramid including six lateral surfaces, each of the six lateral surfaces including an inwardly curved surface portion, and wherein, in a top view of the sapphire substrate, each of the plurality of projections has a shape of a pseudo-hexagon; and a semiconductor layered body comprising a nitride semiconductor on the principal surface side of the sapphire substrate, the semiconductor layered body including an active layer.

    LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME

    公开(公告)号:US20170155014A1

    公开(公告)日:2017-06-01

    申请号:US15361222

    申请日:2016-11-25

    CPC classification number: H01L33/007 H01L33/12 H01L33/20 H01L33/32

    Abstract: A light-emitting element includes a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of projections on the principal surface, wherein each of the plurality of projections has a shape of pseudo-hexagonal pyramid including six lateral surfaces, each of the six lateral surfaces including an inwardly curved surface portion, and wherein, in a top view of the sapphire substrate, each of the plurality of projections has a shape of a pseudo-hexagon that includes first curved lines and second curved lines that are alternately connected to one another, the first curved lines being curved toward a center of a corresponding hexagon and disposed between respective adjacent pairs of six vertices of the hexagon, and the second curved lines passing through respective vertices of the hexagon; and a semiconductor layered body comprising a nitride semiconductor on the principal surface side of the sapphire substrate, the semiconductor layered body including an active layer.

    Light-emitting element and method for producing the same

    公开(公告)号:US09978903B2

    公开(公告)日:2018-05-22

    申请号:US15361222

    申请日:2016-11-25

    CPC classification number: H01L33/007 H01L33/12 H01L33/20 H01L33/32

    Abstract: A light-emitting element includes a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of projections on the principal surface, wherein each of the plurality of projections has a shape of pseudo-hexagonal pyramid including six lateral surfaces, each of the six lateral surfaces including an inwardly curved surface portion, and wherein, in a top view of the sapphire substrate, each of the plurality of projections has a shape of a pseudo-hexagon that includes first curved lines and second curved lines that are alternately connected to one another, the first curved lines being curved toward a center of a corresponding hexagon and disposed between respective adjacent pairs of six vertices of the hexagon, and the second curved lines passing through respective vertices of the hexagon; and a semiconductor layered body comprising a nitride semiconductor on the principal surface side of the sapphire substrate, the semiconductor layered body including an active layer.

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