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公开(公告)号:US10134944B2
公开(公告)日:2018-11-20
申请号:US15957692
申请日:2018-04-19
Applicant: NICHIA CORPORATION
Inventor: Hiroyuki Inoue , Tomohiro Shimooka
Abstract: A light-emitting element includes: a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of projections on the principal surface, wherein each of the plurality of projections has a shape of pseudo-hexagonal pyramid including six lateral surfaces, each of the six lateral surfaces including an inwardly curved surface portion, and wherein, in a top view of the sapphire substrate, each of the plurality of projections has a shape of a pseudo-hexagon; and a semiconductor layered body comprising a nitride semiconductor on the principal surface side of the sapphire substrate, the semiconductor layered body including an active layer.
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公开(公告)号:US20170155014A1
公开(公告)日:2017-06-01
申请号:US15361222
申请日:2016-11-25
Applicant: NICHIA CORPORATION
Inventor: Hiroyuki Inoue , Tomohiro Shimooka
CPC classification number: H01L33/007 , H01L33/12 , H01L33/20 , H01L33/32
Abstract: A light-emitting element includes a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of projections on the principal surface, wherein each of the plurality of projections has a shape of pseudo-hexagonal pyramid including six lateral surfaces, each of the six lateral surfaces including an inwardly curved surface portion, and wherein, in a top view of the sapphire substrate, each of the plurality of projections has a shape of a pseudo-hexagon that includes first curved lines and second curved lines that are alternately connected to one another, the first curved lines being curved toward a center of a corresponding hexagon and disposed between respective adjacent pairs of six vertices of the hexagon, and the second curved lines passing through respective vertices of the hexagon; and a semiconductor layered body comprising a nitride semiconductor on the principal surface side of the sapphire substrate, the semiconductor layered body including an active layer.
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公开(公告)号:US10442987B2
公开(公告)日:2019-10-15
申请号:US16118209
申请日:2018-08-30
Applicant: NICHIA CORPORATION
Inventor: Toru Takasone , Masahiko Sano , Hiroyuki Inoue , Shoichi Yamada , Takafumi Sugiyama
IPC: C09K11/02 , F21V29/502 , C09K11/77 , F21V9/30 , F21V13/08 , F21V7/30 , C04B35/115 , C04B35/117 , C04B38/00 , C09D5/22 , H01L33/50 , C04B35/64 , H01L33/64 , C04B111/80
Abstract: A fluorescent member includes: a plurality of fluorescent particles; an inorganic binder; and a plurality of pores. An upper surface of the fluorescent member is a light extraction surface of the fluorescent member. The plurality of pores are localized in a vicinity of at least one of the plurality of fluorescent particles in a cross section that is parallel to the upper surface of the fluorescent member and extends through the fluorescent particles and the pores.
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公开(公告)号:US09978903B2
公开(公告)日:2018-05-22
申请号:US15361222
申请日:2016-11-25
Applicant: NICHIA CORPORATION
Inventor: Hiroyuki Inoue , Tomohiro Shimooka
CPC classification number: H01L33/007 , H01L33/12 , H01L33/20 , H01L33/32
Abstract: A light-emitting element includes a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of projections on the principal surface, wherein each of the plurality of projections has a shape of pseudo-hexagonal pyramid including six lateral surfaces, each of the six lateral surfaces including an inwardly curved surface portion, and wherein, in a top view of the sapphire substrate, each of the plurality of projections has a shape of a pseudo-hexagon that includes first curved lines and second curved lines that are alternately connected to one another, the first curved lines being curved toward a center of a corresponding hexagon and disposed between respective adjacent pairs of six vertices of the hexagon, and the second curved lines passing through respective vertices of the hexagon; and a semiconductor layered body comprising a nitride semiconductor on the principal surface side of the sapphire substrate, the semiconductor layered body including an active layer.
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