公开(公告)号：US09893239B2

公开(公告)日：2018-02-13

申请号：US15371888

申请日：2016-12-07

Applicant: NICHIA CORPORATION

Inventor： Takaaki Tada ,  Takayoshi Wakaki

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/58

CPC classification number: H01L33/44 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/58 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/19107 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A method of manufacturing a light emitting device includes providing a light emitting element; and forming a protective film on a surface of the light emitting element, wherein the step of forming the protective film includes: (i) providing first quantity of oxygen at the surface of the light emitting element, (ii) combining a first quantity of a first metal with the first quantity of oxygen, (iii) combining a second quantity of oxygen with the first quantity of metal, (iv) combining a first quantity of a second metal, different from the first metal, with the second quantity of oxygen and first quantity of the first metal, and (v) combining a third quantity of oxygen with the first quantity of the second metal.

公开(公告)号：US10050182B2

公开(公告)日：2018-08-14

申请号：US15851459

申请日：2017-12-21

Applicant: NICHIA CORPORATION

Inventor： Takaaki Tada ,  Takayoshi Wakaki

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/58

Abstract: A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.

公开(公告)号：US10431720B2

公开(公告)日：2019-10-01

申请号：US16035510

申请日：2018-07-13

Applicant: NICHIA CORPORATION

Inventor： Takaaki Tada ,  Takayoshi Wakaki

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/58

Abstract: A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.

公开(公告)号：US12243972B2

公开(公告)日：2025-03-04

申请号：US17724139

申请日：2022-04-19

Applicant: NICHIA CORPORATION

Inventor： Daisuke Kishikawa ,  Takaaki Tada ,  Tomohisa Toda ,  Naoki Ishida ,  Yoshiki Endo

IPC: H01L21/00 ,  H01L33/48 ,  H01L33/56 ,  H01L33/62

Abstract: A light emitting device includes: a base having an upper face; a light emitting element mounted on the upper face of the base; one or more bonding members disposed on the upper face of the base outward of the light emitting element; a light transmissive member bonded to a portion of the upper face of the base by the one or more bonding members; and a protective film that continuously covers the light emitting element, the upper face of the base, lateral faces of the one or more bonding members, and a lower face of the light transmissive member. A gap is located between the upper face of the base and the lower face of the light transmissive member and configured to allow a space in which the light emitting element is mounted to communicate with an outside of the light emitting device, wherein the gap is defined by the upper face of the base, the lower face of the light transmissive member, and the one or more bonding members.

公开(公告)号：US11239218B2

公开(公告)日：2022-02-01

申请号：US16582259

申请日：2019-09-25

Applicant: NICHIA CORPORATION

Inventor： Takaaki Tada

IPC: H01L33/00 ,  H01L25/13 ,  F21V3/04 ,  H01L33/50 ,  F21Y115/10 ,  F21Y113/13 ,  F21V7/28 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/60 ,  F21Y103/10

Abstract: A light emitting module includes red, green and blue light sources, and a light diffusing member is arranged above the light sources. The red light source includes a first light emitting element configured to emit light in a range from ultraviolet to blue, a first phosphor layer containing a first phosphor configured to emit red light, and a first film configured to transmit red light and block light in the range from ultraviolet to blue. The green light source includes a second light emitting element configured to emit light in the range from ultraviolet to blue, a second phosphor layer containing a second phosphor configured to emit green light, and a second film configured to transmit green light and block light in the range from ultraviolet to blue. The blue light source includes a third light emitting element configured to emit light in the range from ultraviolet to blue.