Light emitting device
    3.
    发明授权

    公开(公告)号:US10431720B2

    公开(公告)日:2019-10-01

    申请号:US16035510

    申请日:2018-07-13

    IPC分类号: H01L33/44 H01L33/00 H01L33/58

    摘要: A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.

    Light-emitting module and method of manufacturing light-emitting module

    公开(公告)号:US11605766B2

    公开(公告)日:2023-03-14

    申请号:US17135011

    申请日:2020-12-28

    发明人: Takayoshi Wakaki

    摘要: A light-emitting module includes: a light-transmitting lightguide plate; light sources disposed on the lightguide plate, each light source including a light-emitting element and a cover member including a first resin and provided beside a lateral surface of the light-emitting element, with first and second electrodes exposed through the cover member; a light-reflecting member provided on the lightguide plate and provided around the light sources, with the cover members of exposed through the light-reflecting member, wherein the light-reflecting member includes a second resin having a higher hardness than the first resin; a support layer covering the light-reflecting member and the cover members, with the first electrodes and the second electrodes exposed through the support layer, wherein the support layer includes a third resin having a higher hardness than the first resin; and a wiring layer provided on the support layer and connected to the first electrodes and the second electrodes.

    Method of manufacturing light emitting device

    公开(公告)号:US10050182B2

    公开(公告)日:2018-08-14

    申请号:US15851459

    申请日:2017-12-21

    IPC分类号: H01L33/00 H01L33/44 H01L33/58

    摘要: A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.

    Method for manufacturing light emitting device

    公开(公告)号:US10355173B2

    公开(公告)日:2019-07-16

    申请号:US15837434

    申请日:2017-12-11

    IPC分类号: H01L33/44 H01L33/64 H01L33/48

    摘要: A method for manufacturing a light emitting device includes: integrally molding a package and a lead, the package arranged to form at least part of an inner peripheral face of a recess portion in which the light emitting element is housed, the package including a base material and a plurality of particles, the base material including a resin, a coefficient of thermal expansion of the particles being different from a coefficient of thermal expansion of the base material; and covering the inner peripheral face of the recess portion with a cover film, the cover film having light transmissive and electrical insulation.

    Light emitting device and method for manufacturing same

    公开(公告)号:US09871170B2

    公开(公告)日:2018-01-16

    申请号:US14299065

    申请日:2014-06-09

    IPC分类号: H01L33/44 H01L33/64 H01L33/48

    摘要: A light emitting device has a light emitting element, a package, a lead, and a cover film. The package is arranged to form at least part of an inner peripheral face of a recess portion. The light emitting element is housed in the recess portion. The lead is disposed on a bottom face of the recess portion. The lead is electrically connected to the light emitting element. The cover film is arranged to cover the inner peripheral face of the recess portion. The cover film has light transmissive and electrical insulation. The package includes a base material and a plurality of particles. The base material includes a resin. A coefficient of thermal expansion of the particles is different from a coefficient of thermal expansion of the base material. The particles are disposed at least near the inner peripheral face of the recess portion.