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    Method and apparatus for laser drilling blind vias
    2.
    发明授权
    Method and apparatus for laser drilling blind vias 有权

    公开(公告)号：US11232951B1

    公开(公告)日：2022-01-25

    申请号：US16928252

    申请日：2020-07-14

    Applicant: Applied Materials, Inc.

    Inventor： Wei-Sheng Lei ,  Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Visweswaren Sivaramakrishnan

    IPC: H01L21/268 ,  H01L21/768 ,  B23K26/386 ,  H01L21/68 ,  B23K26/00 ,  H01L21/67

    Abstract: In an embodiment is provided a method of forming a blind via in a substrate comprising a mask layer, a conductive layer, and a dielectric layer that includes conveying the substrate to a scanning chamber; determining one or more properties of the blind via, the one or more properties comprising a top diameter, a bottom diameter, a volume, or a taper angle of about 80° or more; focusing a laser beam at the substrate to remove at least a portion of the mask layer; adjusting the laser process parameters based on the one or more properties; and focusing the laser beam, under the adjusted laser process parameters, to remove at least a portion of the dielectric layer within the volume to form the blind via. In some embodiments, the mask layer can be pre-etched. In another embodiment is provided an apparatus for forming a blind via in a substrate.

    METHOD AND APPARATUS FOR LASER DRILLING BLIND VIAS
    3.
    发明申请
    METHOD AND APPARATUS FOR LASER DRILLING BLIND VIAS 有权

    公开(公告)号：US20220020590A1

    公开(公告)日：2022-01-20

    申请号：US16928252

    申请日：2020-07-14

    Applicant: Applied Materials, Inc.

    Inventor： Wei-Sheng LEI ,  Kurtis LESCHKIES ,  Roman GOUK ,  Steven VERHAVERBEKE ,  Visweswaren SIVARAMAKRISHNAN

    IPC: H01L21/268 ,  H01L21/768 ,  H01L21/67 ,  H01L21/68 ,  B23K26/00 ,  B23K26/386

    Abstract: In an embodiment is provided a method of forming a blind via in a substrate comprising a mask layer, a conductive layer, and a dielectric layer that includes conveying the substrate to a scanning chamber; determining one or more properties of the blind via, the one or more properties comprising a top diameter, a bottom diameter, a volume, or a taper angle of about 80° or more; focusing a laser beam at the substrate to remove at least a portion of the mask layer; adjusting the laser process parameters based on the one or more properties; and focusing the laser beam, under the adjusted laser process parameters, to remove at least a portion of the dielectric layer within the volume to form the blind via. In some embodiments, the mask layer can be pre-etched. In another embodiment is provided an apparatus for forming a blind via in a substrate.

    TWO-DIMENSIONAL DATA MATRIX STRUCTURE AND THE FABRICATION METHOD THEREOF
    5.
    发明申请
    TWO-DIMENSIONAL DATA MATRIX STRUCTURE AND THE FABRICATION METHOD THEREOF 审中-公开

    公开(公告)号：US20190327826A1

    公开(公告)日：2019-10-24

    申请号：US15980739

    申请日：2018-05-16

    Applicant: Unimicron Technology Corp.

    Inventor： Jun-Jie CHANG ,  Shian-Tang CHANG ,  Dung-Ying SUNG

    IPC: H05K1/02 ,  B23K26/386 ,  H05K3/46 ,  H05K3/00

    Abstract: A two-dimensional data matrix structure includes a first substrate, a first metal layer disposed on the first substrate, a second substrate disposed on the first metal layer, and a second metal layer disposed on the second substrate. The first metal layer has a plurality of sections and a plurality of empty regions formed according to a two-dimensional data matrix pattern. The first substrate, the second substrate, and the second metal layer commonly have a plurality of through holes, and positions of the through holes correspond to positions of the empty regions. The second substrate and the second metal layer commonly have a plurality of blind holes, and positions of the blind holes correspond to positions of the sections. The sections are exposed through the blind holes, and the configuration of the through holes and the blind holes is the two-dimensional data matrix pattern when viewed from above.

    METHOD OF FORMING THROUGH HOLE
    10.
    发明申请
    METHOD OF FORMING THROUGH HOLE 有权

    公开(公告)号：US20210060708A1

    公开(公告)日：2021-03-04

    申请号：US16892408

    申请日：2020-06-04

    Applicant: AISIN SEIKI KABUSHIKI KAISHA

    Inventor： Taisuke NAITO

    IPC: B23K26/384 ,  B23K26/386

    Abstract: A method of forming a through hole, wherein a spot of a laser light scans along a predetermined path and forms a through hole includes a first process in which the spot of the laser light circulates along an inner path from a predetermined first point on the inner path and reaches a predetermined second point. The inner path is positioned at an inner side relative to an outer path. The predetermined second point is positioned before the spot of the laser light returns to the predetermined first point. The method includes a second process in which the spot of the laser light moves along a transition path and reaches a predetermined third point on the outer path. The method includes a third process in which the spot of the laser light circulates along the outer path from the predetermined third point and returns to the predetermined third point.

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