公开(公告)号：US09515644B2

公开(公告)日：2016-12-06

申请号：US14286418

申请日：2014-05-23

Applicant: NXP B.V.

Inventor： Viet Thanh Dinh ,  Godefridus Antonius Maria Hurxk ,  Tony Vanhoucke ,  Jan Willem Slotboom ,  Anco Heringa ,  Ivan Zahariev ,  Evelyne Gridelet

IPC: H03F1/34 ,  H03K17/10 ,  H01L29/40 ,  H01L29/732 ,  H01L29/165 ,  H01L29/737 ,  H03F3/19 ,  H03F3/21 ,  G05F1/46

CPC classification number: H03K17/10 ,  G05F1/462 ,  H01L29/165 ,  H01L29/402 ,  H01L29/7327 ,  H01L29/737 ,  H03F1/34 ,  H03F3/19 ,  H03F3/21 ,  H03F2200/153

Abstract: A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.

Abstract translation: 一种电路，包括具有一个或多个场栅极端子的半导体器件，用于控制半导体器件的漂移区域中的电场; 以及反馈电路，被配置为响应于在另一个节点处的时变信号，动态地控制施加到场门极端子的偏置电压或电压，其具有用于不同半导体器件特性的不同控制电压 电路。

公开(公告)号：US20140347135A1

公开(公告)日：2014-11-27

申请号：US14284509

申请日：2014-05-22

Applicant: NXP B.V.

Inventor： Viet Thanh Dinh ,  Godefridus Adrianus Maria Hurxk ,  Tony Vanhoucke ,  Jan Slotboom ,  Anco Heringa ,  Ivan Zahariev ,  Evelyne Gridelet

IPC: H03K17/10 ,  H03F3/21 ,  H03F3/19 ,  H01L29/737 ,  H01L29/165

CPC classification number: H03K17/10 ,  G05F1/462 ,  H01L29/165 ,  H01L29/402 ,  H01L29/7327 ,  H01L29/737 ,  H03F1/34 ,  H03F3/19 ,  H03F3/21 ,  H03F2200/153

Abstract: The invention provides a bipolar transistor circuit and a method of controlling a bipolar transistor, in which the bipolar transistor has a gate terminal for controlling the electric field in a collector region of the transistor. The bias voltage applied to the gate terminal is controlled to achieve different transistor characteristics.

Abstract translation: 本发明提供了一种双极晶体管电路和双极晶体管的控制方法，其中双极晶体管具有用于控制晶体管的集电极区域中的电场的栅极端子。 施加到栅极端子的偏置电压被控制以实现不同的晶体管特性。

公开(公告)号：US20140347131A1

公开(公告)日：2014-11-27

申请号：US14286418

申请日：2014-05-23

Applicant: NXP B.V.

Inventor： Viet Thanh Dinh ,  Godefridus Antonius Maria Hurxk ,  Tony Vanhoucke ,  Jan Willem Slotboom ,  Anco Heringa ,  Ivan Zahariev ,  Evelyne Gridelet

IPC: G05F1/46 ,  H03F3/21

CPC classification number: H03K17/10 ,  G05F1/462 ,  H01L29/165 ,  H01L29/402 ,  H01L29/7327 ,  H01L29/737 ,  H03F1/34 ,  H03F3/19 ,  H03F3/21 ,  H03F2200/153

Abstract: A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.

Abstract translation: 一种电路，包括具有一个或多个场栅极端子的半导体器件，用于控制半导体器件的漂移区域中的电场; 以及反馈电路，被配置为响应于在另一个节点处的时变信号，动态地控制施加到场门极端子的偏置电压或电压，其具有用于不同半导体器件特性的不同控制电压 电路。