利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.017 秒)

    Method for Manufacturing Aluminum Nitride Crystal, Aluminum Nitride Crystal, Aluminum Nitride Crystal Substrate and Semiconductor Device
    2.
    发明申请
    Method for Manufacturing Aluminum Nitride Crystal, Aluminum Nitride Crystal, Aluminum Nitride Crystal Substrate and Semiconductor Device 审中-公开
    氮化铝结晶，氮化铝晶体，氮化铝晶体基板和半导体器件的制造方法

    公开(公告)号：US20090087645A1

    公开(公告)日：2009-04-02

    申请号：US12160308

    申请日：2007-01-10

    申请人： Naho Mizuhara ,  Michimasa Miyanaga ,  Tomohiro Kawase ,  Shinsuke Fujiwara

    发明人： Naho Mizuhara ,  Michimasa Miyanaga ,  Tomohiro Kawase ,  Shinsuke Fujiwara

    IPC分类号： C01B21/072 ,  C09D151/06

    CPC分类号： H01L29/7787 ,  C30B23/00 ,  C30B29/403 ,  H01L29/2003 ,  H01L29/66462 ,  Y10T428/26

    摘要： Affords methods of manufacturing AlN crystals, and AlN crystals, AlN crystal substrates, and semiconductor devices fabricated employing the AlN crystal substrates, that enable semiconductor devices having advantageous properties to be obtained. One aspect of the present invention is an AlN crystal manufacturing method including a step of growing AlN crystal onto the surface of a SiC seed-crystal substrate, and a step of picking out at least a portion of the AlN crystal lying a range of from 2 mm to 60 mm from the SiC seed-crystal substrate surface into the AlN crystal. Furthermore, other aspects are AlN crystals and AlN crystal substrates manufactured by the method, and semiconductor devices fabricated employing the AlN crystal substrates.

    摘要翻译： 提供制造AlN晶体的方法，以及AlN晶体，AlN晶体衬底和使用AlN晶体衬底制造的半导体器件，使得能够获得具有有利性质的半导体器件。 本发明的一个方面是一种AlN晶体制造方法，其包括在SiC籽晶衬底的表面上生长AlN晶体的步骤，以及选择至少一部分AlN晶体的步骤，其范围为2 从SiC晶种衬底表面到60nm的AlN晶体。 此外，其他方面是通过该方法制造的AlN晶体和AlN晶体衬底，以及使用AlN晶体衬底制造的半导体器件。

    Process for Producing Substrate of AlN Crystal, Method of Growing AlN Crystal, and Substrate of AlN Crystal
    3.
    发明申请
    Process for Producing Substrate of AlN Crystal, Method of Growing AlN Crystal, and Substrate of AlN Crystal 审中-公开
    制备AlN晶体基板的方法，生长AlN晶体的方法和AlN晶体的基板

    公开(公告)号：US20090280354A1

    公开(公告)日：2009-11-12

    申请号：US12306695

    申请日：2007-06-15

    申请人： Naho Mizuhara ,  Tomohiro Kawase ,  Michimasa Miyanaga

    发明人： Naho Mizuhara ,  Tomohiro Kawase ,  Michimasa Miyanaga

    IPC分类号： B05D5/12 ,  B32B9/00

    CPC分类号： C30B29/403 ,  C30B23/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02631

    摘要： Affords AlN crystal substrate manufacturing methods whereby large-scale, high-quality AlN crystal substrates can be manufactured; AlN crystal growth methods whereby bulk AlN of superior crystallinity can be grown; and AlN crystal substrates composed of the AlN crystal grown by the growth methods. AlN crystal substrate manufacturing method including: a step of growing an AlN crystal by sublimation onto a heterogeneous substrate to a thickness of, with respect to the heterogeneous-substrate diameter r, 0.4r or more; and a step of forming an AlN crystal substrate from a region of the AlN crystal not less than 200 μm away from the heterogeneous substrate. Also, AlN crystal growth technique of growing an AlN crystal by sublimation onto an AlN crystal substrate manufactured by the manufacturing method, and AlN crystal substrates composed of the AlN crystal grown by the growth technique.

    摘要翻译： 提供可以制造大规模，高质量的AlN晶体基板的AlN晶体基板制造方法; AlN晶体生长方法可以生长具有优异结晶度的块状AlN; 和由通过生长方法生长的AlN晶体组成的AlN晶体衬底。 AlN晶体基板的制造方法，其特征在于，包括以下步骤：将AlN晶体通过升华成非均相基板直径r的厚度为0.4r以上， 以及从不均匀衬底的不小于200μm的AlN晶体的区域形成AlN晶体衬底的步骤。 此外，通过升华将AlN晶体生长到通过制造方法制造的AlN晶体衬底上的AlN晶体生长技术和由通过生长技术生长的AlN晶体组成的AlN晶体衬底。

    AlN crystal and method for growing the same, and AlN crystal substrate
    4.
    发明授权
    AlN crystal and method for growing the same, and AlN crystal substrate 有权
    AlN晶体和生长方法相同，和AlN晶体衬底

    公开(公告)号：US08470090B2

    公开(公告)日：2013-06-25

    申请号：US11997153

    申请日：2006-07-10

    申请人： Naho Mizuhara ,  Michimasa Miyanaga ,  Tomohiro Kawase ,  Shinsuke Fujiwara

    发明人： Naho Mizuhara ,  Michimasa Miyanaga ,  Tomohiro Kawase ,  Shinsuke Fujiwara

    IPC分类号： C30B23/06

    CPC分类号： C30B23/02 ,  C30B23/066 ,  C30B25/02 ,  C30B29/403 ,  Y10T428/2982

    摘要： Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal (4) is grown by vapor-phase epitaxy onto a seed crystal substrate (2) placed inside a crystal-growth compartment (24) within a crystal-growth vessel (12) provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment (24).

    摘要翻译： 提供适用于具有优异结晶度的各种类型的半导体器件的大直径AlN晶体，生长AlN晶体的方法和AlN晶体衬底。 AlN晶体生长方法是通过气相外延生长AlN晶体（4）到放置在晶体生长容器（12）内的晶体生长室（24）内的晶种衬底（2）上的方法， 提供在反应室内，其特征在于，在晶体生长期间，含碳气体被供应到晶体生长室（24）的内部。

    AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate
    6.
    发明申请
    AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate 有权
    AlN晶体及其生长方法，以及AlN晶体基板

    公开(公告)号：US20100221539A1

    公开(公告)日：2010-09-02

    申请号：US11997153

    申请日：2006-07-10

    申请人： Naho Mizuhara ,  Michimasa Miyanaga ,  Tomohiro Kawase ,  Shinsuke Fujiwara

    发明人： Naho Mizuhara ,  Michimasa Miyanaga ,  Tomohiro Kawase ,  Shinsuke Fujiwara

    IPC分类号： C01B21/072 ,  C30B25/02

    CPC分类号： C30B23/02 ,  C30B23/066 ,  C30B25/02 ,  C30B29/403 ,  Y10T428/2982

    摘要： Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal (4) is grown by vapor-phase epitaxy onto a seed crystal substrate (2) placed inside a crystal-growth compartment (24) within a crystal-growth vessel (12) provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment (24).

    摘要翻译： 提供适用于具有优异结晶度的各种类型的半导体器件的大直径AlN晶体，生长AlN晶体的方法和AlN晶体衬底。 AlN晶体生长方法是通过气相外延生长AlN晶体（4）到放置在晶体生长容器（12）内的晶体生长室（24）内的晶种衬底（2）上的方法， 提供在反应室内，其特征在于，在晶体生长期间，含碳气体被供应到晶体生长室（24）的内部。

    Group III nitride single crystal and method of its growth
    8.
    发明授权
    Group III nitride single crystal and method of its growth 有权
    III族氮化物单晶及其生长方法

    公开(公告)号：US08377204B2

    公开(公告)日：2013-02-19

    申请号：US12305001

    申请日：2006-06-16

    申请人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

    发明人： Michimasa Miyanaga ,  Naho Mizuhara ,  Shinsuke Fujiwara ,  Seiji Nakahata ,  Hideaki Nakahata

    IPC分类号： C30B23/00 ,  B32B5/16

    CPC分类号： C30B23/005 ,  C30B29/403 ,  C30B35/002 ,  Y10T428/2982

    摘要： Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).

    摘要翻译： 提供具有良好重现性的具有良好结晶度的III族氮化物单晶的方法和通过生长方法获得的III族氮化物晶体。 一种方法是在晶体生长容器（11）的内部生长III族氮化物单晶（3），其特征在于，至少使用由孔隙率在0.1％至70％之间的金属碳化物形成的多孔体 晶体生长容器（11）的一部分。 采用晶体生长容器（11）使得可以通过多孔体中的孔将晶体生长容器（11）内的源气体（4）的1％〜50％排出到晶体生长容器 生长容器（11）。

    AlN Crystal and Method of Its Growth
    10.
    发明申请
    AlN Crystal and Method of Its Growth 审中-公开
    AlN晶体及其生长方法

    公开(公告)号：US20100242833A1

    公开(公告)日：2010-09-30

    申请号：US12524575

    申请日：2008-11-13

    申请人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    IPC分类号： C30B23/02

    CPC分类号： C30B29/403 ,  C30B23/00 ,  C30B23/025 ,  C30B25/00 ,  C30B25/18

    摘要： The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate (4) having a major face (4m) with a 0 cm−2 density of micropipes (4mp) having tubal diameters of down to 1000 μm, and a not greater than 0.1 cm−2 density of micropipes (4mp) having tubal diameters of between 100 μm and less than 1000 μm; and a step of growing AlN crystal (5) onto the major face (4m) by vapor-phase deposition.

    摘要翻译： 本发明提供能够稳定生长大面积厚AlN晶体的AlN晶体生长方法。 本发明的AlN晶体生长方法具有如下步骤：制备具有0cm -2密度的具有至少1000μm的输卵管直径的微管（4mp）的主面（4m）的SiC衬底（4） 和不大于0.1cm -2密度的具有100μm至小于1000μm的输卵管直径的微管（4mp）; 以及通过气相沉积将AlN晶体（5）生长到主面（4m）上的步骤。