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    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal
    4.
    发明申请
    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal 有权
    生产氮化铝晶体的方法，生产氮化铝晶体的方法和氮化铝晶体

    公开(公告)号：US20100143748A1

    公开(公告)日：2010-06-10

    申请号：US12595957

    申请日：2008-12-19

    申请人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    发明人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC分类号： B32B9/04 ,  C30B23/06

    CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658

    摘要： Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

    摘要翻译： 生产和制造氮化铝晶体的方法和通过这些方法生产的氮化铝晶体。 防止起始衬底的升华允许以提高的生长速率生长具有优异结晶度的氮化铝晶体。 氮化铝晶体生长方法包括以下步骤。 首先，制备层状基板，配备有具有主表面和背面的起始衬底，在背面形成的第一层和形成在第一层上的第二层。 然后通过气相沉积将氮化铝晶体生长到起始衬底的主表面上。 第一层由在生长氮化铝晶体的温度下比起始衬底更不易升华的物质制成。 第二层由导热率高于第一层的物质制成。

    AlN Crystal and Method of Its Growth
    7.
    发明申请
    AlN Crystal and Method of Its Growth 审中-公开
    AlN晶体及其生长方法

    公开(公告)号：US20100242833A1

    公开(公告)日：2010-09-30

    申请号：US12524575

    申请日：2008-11-13

    申请人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Hideaki Nakahata

    IPC分类号： C30B23/02

    CPC分类号： C30B29/403 ,  C30B23/00 ,  C30B23/025 ,  C30B25/00 ,  C30B25/18

    摘要： The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate (4) having a major face (4m) with a 0 cm−2 density of micropipes (4mp) having tubal diameters of down to 1000 μm, and a not greater than 0.1 cm−2 density of micropipes (4mp) having tubal diameters of between 100 μm and less than 1000 μm; and a step of growing AlN crystal (5) onto the major face (4m) by vapor-phase deposition.

    摘要翻译： 本发明提供能够稳定生长大面积厚AlN晶体的AlN晶体生长方法。 本发明的AlN晶体生长方法具有如下步骤：制备具有0cm -2密度的具有至少1000μm的输卵管直径的微管（4mp）的主面（4m）的SiC衬底（4） 和不大于0.1cm -2密度的具有100μm至小于1000μm的输卵管直径的微管（4mp）; 以及通过气相沉积将AlN晶体（5）生长到主面（4m）上的步骤。