公开(公告)号：US20040076893A1

公开(公告)日：2004-04-22

申请号：US10448675

申请日：2003-05-29

Applicant: Nanya Technology Corporation

Inventor： Yu-Sheng Shu ,  Yuan-Hsun Wu ,  Chung-Yuan Lee ,  Shian-Jyh Lin

IPC: G03F009/00 ,  G03C005/00

CPC classification number: H01L27/1087 ,  H01L21/3083 ,  H01L27/0207 ,  H01L27/10864

Abstract: A method of forming a vertical memory device with a rectangular trench. First, a substrate covered by a photoresist layer is provided. Next, the photoresist layer is defined by a mask to form a rectangular opening, wherein the mask has two rectangular transparent patterns arranged with a predetermined interval. Next, the substrate is etched using the defined photoresist layer as a mask to form a single rectangular trench and the photoresist layer is then removed. Finally, a trench capacitor and a vertical transistor are successively formed in the rectangular trench to finish the vertical memory device.

Abstract translation: 一种形成具有矩形沟槽的垂直存储器件的方法。 首先，提供由光致抗蚀剂层覆盖的基板。 接下来，通过掩模限定光致抗蚀剂层以形成矩形开口，其中掩模具有以预定间隔布置的两个矩形透明图案。 接下来，使用限定的光致抗蚀剂层作为掩模来蚀刻基板以形成单个矩形沟槽，然后除去光致抗蚀剂层。 最后，在矩形沟槽中依次形成沟槽电容器和垂直晶体管，以完成垂直存储器件。

公开(公告)号：US20040029394A1

公开(公告)日：2004-02-12

申请号：US10313602

申请日：2002-12-05

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Yuan-Hsun Wu

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/0276 ,  G03F7/091

Abstract: A method and a structure for preventing wafer edge defocus. The method comprises the following steps. First, a wafer is provided. Next, an anti-reflect layer is formed on the wafer. Parts of the anti-reflect layer are removed to expose the rim of the wafer surface. Finally, a photoresist layer is blanketed on the anti-reflect layer and the rim of the wafer.

Abstract translation: 一种防止晶片边缘散焦的方法和结构。 该方法包括以下步骤。 首先，提供晶片。 接着，在晶片上形成防反射层。 去除部分抗反射层以露出晶片表面的边缘。 最后，光致抗蚀剂层被覆盖在晶片的防反射层和边缘上。

公开(公告)号：US20030180629A1

公开(公告)日：2003-09-25

申请号：US10308746

申请日：2002-12-03

Applicant: Nanya Technology Corporation

Inventor： Yuan-Hsun Wu

IPC: G03F001/00 ,  G21K003/00 ,  G03F007/20

CPC classification number: G03F1/34

Abstract: A mask and method for contact hole exposure. First, a mask including a transparent substrate, a 180null phase shift layer installed on the transparent substrate to define a series of patterns having contact hole transparent areas with 0null phase, and at least one 0null phase opening installed in the phase shift layer between the adjacent contact hole transparent areas is provided. Then, an exposure is performed by transmitting a light source, such as deep ultraviolet (UV), extreme ultraviolet, or X-ray, through the mask, so as to eliminate high degree diffraction waves by the 0null phase opening.

Abstract translation: 接触孔暴露的掩模和方法。 首先，将包括透明基板的掩模，安装在透明基板上的180°相移层，以限定具有0°相位的接触孔透明区域的一系列图案，以及安装在相移层中的至少一个0°相位开口 设置在相邻的接触孔透明区域之间。 然后，通过透过掩模透射诸如深紫外（UV），极紫外或X射线的光源进行曝光，以消除0°相位开度的高度衍射波。

公开(公告)号：US20030065475A1

公开(公告)日：2003-04-03

申请号：US10045840

申请日：2001-11-08

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Yuan-Hsun Wu

IPC: G06F015/00

CPC classification number: G03F1/72 ,  G01N21/95684 ,  G03F1/84

Abstract: The present invention provides a method for estimating repair accuracy of a mask shop. The method has the steps of providing a mask having a light-shielding layer with a pattern of a plurality of lines, each of which has a defect, using the mask shop to repair the defects, measuring first widths of the lines where the defects are repaired and second and third widths of the lines aside where the defects are repaired, and calculating ratios of means of the second and third widths to the first widths for estimating the repair accuracy.

Abstract translation: 本发明提供了一种用于估计掩模车间的修理精度的方法。 该方法具有以下步骤：使用掩模车间修复缺陷，提供具有多条线的图案的遮光层的掩模，每个线具有缺陷，测量缺陷的线的第一宽度 修理和修复缺陷的线的第二和第三宽度，以及计算第二宽度和第三宽度的装置与用于估计修复精度的第一宽度的比率。

公开(公告)号：US20040079729A1

公开(公告)日：2004-04-29

申请号：US10375710

申请日：2003-02-27

Applicant: Nanya Technology Corporation

Inventor： Yi-Nan Chen ,  Wen-Bin Wu ,  Teng-Yen Huang ,  Chun-Cheng Liao ,  Yuan-Hsun Wu ,  Hung Wen Lin

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

CPC classification number: G03F7/16 ,  C23F4/00 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/32136 ,  H01L21/32139

Abstract: A process for etching a metal layer. First, a semiconducting substrate having a metal layer and an anti-reflective layer thereon is provided. Next, the surface of the anti-reflective layer is treated with a weak base aqueous solution. Next, a photoresist layer is formed on the treated anti-reflective layer and then patterned. Next, the treated anti-reflective layer and metal layer are etched using the photoresist pattern as a mask. Finally, the photoresist pattern and anti-reflective layer are removed. The present invention prevents undercut and collapse of photoresist pattern, thus obtaining an accurate metal layer pattern.

Abstract translation: 蚀刻金属层的方法。 首先，提供在其上具有金属层和抗反射层的半导体衬底。 接着，用弱碱性水溶液处理抗反射层的表面。 接下来，在经处理的抗反射层上形成光致抗蚀剂层，然后将其图案化。 接下来，使用光致抗蚀剂图案作为掩模蚀刻经处理的抗反射层和金属层。 最后，去除光致抗蚀剂图案和抗反射层。 本发明防止光刻胶图案的底切和塌陷，从而获得精确的金属层图案。

公开(公告)号：US20030181033A1

公开(公告)日：2003-09-25

申请号：US10199413

申请日：2002-07-18

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Yuan-Hsun Wu

IPC: H01L021/4763 ,  H01L021/44

CPC classification number: G03F1/29 ,  G03F1/34 ,  G03F1/36 ,  Y10S438/943 ,  Y10S438/945 ,  Y10S438/95

Abstract: A mask and method for contact hole exposure. First, a mask including a transparent substrate, a phase shift layer installed on the transparent substrate to define a series of patterns having contact hole areas set in array, an a plurality of metal lines installed on the phase shift layer between the adjacent contact hole areas is provided. Then, an exposure is performed by transmitting a light source, such as deep ultraviolet (UV), extreme ultraviolet, or X-ray, through the mask after the metal lines absorb high degree diffraction waves.

Abstract translation: 接触孔暴露的掩模和方法。 首先，将透明基板，相变层安装在透明基板上以形成具有设置为阵列的接触孔区域的一系列图案的掩模，安装在相邻接触孔区域之间的相移层上的多个金属线 被提供。 然后，通过在金属线吸收高度衍射波之后通过掩模透射诸如深紫外（UV），极紫外或X射线的光源进行曝光。

公开(公告)号：US20040219438A1

公开(公告)日：2004-11-04

申请号：US10657789

申请日：2003-09-08

Applicant: Nanya Technology Corporation

Inventor： Yuan-Hsun Wu

IPC: G03F009/00 ,  G03C005/00

CPC classification number: G03F1/36 ,  G03F7/70441

Abstract: A photomask structure for reducing lens aberration and pattern displacement and method thereof. The photomask consists of a transparent substrate and a light-shielding layer, with the light-shielding layer including an array pattern area and a plurality of assist patterns disposed therein. The distance between the assist pattern and its upper and lower array patterns is equal, and the length of the assist pattern is equal to the width of the array pattern. The method of reducing lens aberration and pattern displacement includes providing a substrate covered by a photoresist layer, forming patterns on the photoresist layer by a photomask, and etching an array trench area in the substrate using a patterned photoresist as a mask. According to the present invention, the uniformity of critical dimension between array patterns is improved and pattern displacement is reduced significantly.

Abstract translation: 一种用于减少透镜像差和图案位移的光掩模结构及其方法。 光掩模由透明基板和遮光层构成，遮光层包括阵列图案区域和布置在其中的多个辅助图案。 辅助图案与其上下阵列图案之间的距离相等，辅助图案的长度等于阵列图案的宽度。 降低透镜像差和图案位移的方法包括提供由光致抗蚀剂层覆盖的基板，通过光掩模在光致抗蚀剂层上形成图案，并使用图案化的光致抗蚀剂作为掩模蚀刻基板中的阵列沟槽区域。 根据本发明，阵列图案之间的临界尺寸的均匀性得到改善，图案位移显着降低。

公开(公告)号：US20030063273A1

公开(公告)日：2003-04-03

申请号：US10035547

申请日：2001-11-06

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Yuan-Hsun Wu

IPC: G01N021/00

CPC classification number: G01N21/95684

Abstract: The present invention provides a method for estimating repair accuracy of a mask shop. The method comprises the steps of providing a mask having a light-shielding layer with a pattern of a plurality of lines, each of which has a defect, using the mask shop to repair the defects. Contaminated areas are formed in the vicinity of areas where the defects are repaired, measuring first light intensities of the contaminated areas, and second and third light intensities of two sides of the contaminated areas, and calculating ratios of means of the second and third light intensities to the first light intensities to estimate the repair accuracy.

Abstract translation: 本发明提供了一种用于估计掩模车间的修理精度的方法。 该方法包括以下步骤：使用掩模车间修复缺陷，提供具有多条线的图案的遮光层的掩模，每个线具有缺陷。 污染区域形成在缺陷修复的区域附近，测量污染区域的第一光强度，污染区域两侧的第二和第三光强度，以及计算第二和第三光强度的平均值 以第一光强估计修复精度。

公开(公告)号：US20030049946A1

公开(公告)日：2003-03-13

申请号：US10112960

申请日：2002-03-28

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Yuan-Hsun Wu

IPC: B28D005/00

CPC classification number: G03F1/36 ,  G03F7/70433

Abstract: An assist pattern design method for lithography C/H process that includes the following steps: determining the exposure wavelength of a lithography machine light source; determining a minimum resolution line width by the sigma, process integration parameter and numerical aperture of the lithography machine; recovering the minimum line width on a mask according to the miniature scale of the determined minimum resolution line width; and using a line pattern smaller than the recovered minimum line width to connect multiply C/H patterns on the mask.

Abstract translation: 一种用于光刻C / H工艺的辅助图案设计方法，包括以下步骤：确定光刻机光源的曝光波长; 通过光刻机的西格玛，工艺积分参数和数值孔径确定最小分辨率线宽; 根据确定的最小分辨率线宽的微缩尺度恢复掩模上的最小线宽; 并且使用小于恢复的最小线宽的线图案来连接掩模上的多个C / H图案。

公开(公告)号：US20040202964A1

公开(公告)日：2004-10-14

申请号：US10611196

申请日：2003-07-01

Applicant: Nanya Technology Corporation

Inventor： Wen-Bin Wu ,  Yuan-Hsun Wu ,  Yi-Nan Chen ,  Teng-Yen Huang

IPC: G03F007/26

CPC classification number: H01L21/0276 ,  G03F7/085 ,  G03F7/11

Abstract: A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.

Abstract translation: 一种用于增强再加工的光致抗蚀剂和潜在的氮氧化合物膜之间的粘合性的方法。 在衬底上的氧氮化物层上形成光致抗蚀剂图案层。 通过酸性溶液或含氧等离子体去除光致抗蚀剂图案层。 使用显影液在氧氮化物层上进行表面处理，以通过除去上覆的光致抗蚀剂图案层来修复损坏的氮氧化物层。 在氧氮化物层上形成再加工的光致抗蚀剂图案层。