Surface emitting laser
    1.
    发明授权
    Surface emitting laser 失效
    表面发射激光

    公开(公告)号:US07881358B2

    公开(公告)日:2011-02-01

    申请号:US12518529

    申请日:2007-12-18

    IPC分类号: H01S5/00

    摘要: A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ

    摘要翻译: 表面发射激光器设置有包括第一层的第一多层布拉格反射镜,包括第二层的第二多层布拉格反射镜和保持在这些多层布拉格反射镜之间并包括有源层的光谐振器单元。 此外,光谐振器单元分别与第一层和第二层接触。 谐振器单元的有效折射率neff大于第一层或第二层,并且光谐振器单元的光学长度neffL与表面发射激光器的振荡波长λ具有关系,以满足以下关系: 0.5λ

    Surface-emission type semiconductor laser
    2.
    发明授权
    Surface-emission type semiconductor laser 失效
    表面发射型半导体激光器

    公开(公告)号:US07974328B2

    公开(公告)日:2011-07-05

    申请号:US12531326

    申请日:2008-03-14

    IPC分类号: H01S5/00

    摘要: The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1),  (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4.  (2)

    摘要翻译: 本发明提供了一种表面发射型半导体激光器,其中空腔的有效长度减小,从而能够实现更高速度的直接调制。 在根据本发明的表面发射型半导体激光器中,当假设谐振器部分相对于激光波长λ0的光程长度(L)为0.9×λ0≦̸ L≦̸ 1.1×λ0时,表示 通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中光路长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择,以满足以下条件(1)和(2):nH1> f (nS1)nL12 + g(nS1)nL1 + h(nS1),(1)其中f(nS1)= 0.0266 nS12-0.2407 nS1 + 0.6347; g(nS1)= - 0.0508 nS12 + 0.4335 nS1-0.0085; h(nS1)= 0.0382 nS12-0.3194 nS1 + 0.7398,nH2-nL2> 0.4。 (2)

    SURFACE-EMISSION TYPE SEMICONDUCTOR LASER
    3.
    发明申请
    SURFACE-EMISSION TYPE SEMICONDUCTOR LASER 失效
    表面发射型半导体激光器

    公开(公告)号:US20100034233A1

    公开(公告)日:2010-02-11

    申请号:US12531326

    申请日:2008-03-14

    IPC分类号: H01S5/00

    摘要: The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1),  (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4.  (2)

    摘要翻译: 本发明提供了一种表面发射型半导体激光器,其中空腔的有效长度减小,从而能够实现更高速度的直接调制。 在根据本发明的表面发射型半导体激光器中,当假设谐振器部分相对于激发波长λ0的光程长度(L)被给定为0.9×λλ<= L <= 1.1×λ10,并且表示 通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中的光程长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择,以满足以下条件(1)和(2):nH1> f (nS1)nL12 + g(nS1)nL1 + h(nS1),(1)其中f(nS1)= 0.0266 nS12-0.2407 nS1 + 0.6347; g(nS1)= - 0.0508 nS12 + 0.4335 nS1-0.0085; h(nS1)= 0.0382 nS12-0.3194 nS1 + 0.7398,nH2-nL2> 0.4。 (2)

    SURFACE EMITTING LASER
    4.
    发明申请
    SURFACE EMITTING LASER 失效
    表面发射激光

    公开(公告)号:US20100020835A1

    公开(公告)日:2010-01-28

    申请号:US12518529

    申请日:2007-12-18

    IPC分类号: H01S5/183

    摘要: A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ

    摘要翻译: 表面发射激光器设置有包括第一层的第一多层布拉格反射镜,包括第二层的第二多层布拉格反射镜和保持在这些多层布拉格反射镜之间并包括有源层的光谐振器单元。 此外,光谐振器单元分别与第一层和第二层接触。 谐振器单元的有效折射率neff大于第一层或第二层,并且光谐振器单元的光学长度neffL与表面发射激光器的振荡波长λ具有关系,以满足以下关系: 0.5lambda

    Vehicle-Mounted Optical Communication System and Vehicle-Mounted Optical Transmitter
    5.
    发明申请
    Vehicle-Mounted Optical Communication System and Vehicle-Mounted Optical Transmitter 审中-公开
    车载光通信系统和车载光发射机

    公开(公告)号:US20080317476A1

    公开(公告)日:2008-12-25

    申请号:US12279509

    申请日:2006-12-28

    IPC分类号: H04B10/00

    摘要: A vehicle-mounted optical communication system, which uses an optical signal to perform data transmission, comprises a first optical transmitter and an optical receiver. The first optical transmitter, which is mounted on a vehicle, has a multiple quantum well structure, in which an active layer has a quantum well layer of InxGa1-xAs (where 0.15≦x≦0.35), and includes a first surface emitting laser the oscillation wavelength of which is between 1000 nm and 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface emitting laser. The optical receiver, which is mounted on the vehicle and connected to the first optical transmitter via a first optical transmission path, receives the optical signal, which was transmitted by the first optical transmitter, via the first optical transmission path.

    摘要翻译: 使用光信号执行数据传输的车载光通信系统包括第一光发射机和光接收机。 安装在车辆上的第一光发射机具有多量子阱结构,其中有源层具有In x Ga 1-x As(其中0.15 <= x <= 0.35)的量子阱层,并且包括第一表面发射 其振荡波长在1000nm和1100nm之间的激光器。 第一光发射器发射由第一表面发射激光器产生的光信号。 安装在车辆上并通过第一光传输路径连接到第一光发射机的光接收器经由第一光传输路径接收由第一光发射机传输的光信号。

    Optical communication system and optical transmitter
    6.
    发明授权
    Optical communication system and optical transmitter 失效
    光通信系统和光发射机

    公开(公告)号:US07940828B2

    公开(公告)日:2011-05-10

    申请号:US12279399

    申请日:2006-12-27

    IPC分类号: H01S5/00

    摘要: An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InxGa1-xAs (0.15≦x≦0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.

    摘要翻译: 用于利用光信号执行数据传输的光通信系统包括第一光发射机和第一光接收机。 第一光发射机具有第一表面发射激光器,其包括具有量子阱层In x Ga 1-x As(0.15&amp; x 1; x&amp; n; 0.35)的多量子阱结构的有源层,所述第一表面发射激光器具有振荡波长范围 从1000nm到1100nm。 第一光发射器发射由第一表面发射激光器产生的光信号。 第一光接收器通过第一光传输路径连接到第一光发射机,并且通过第一光传输路径接收从第一光发射机发送的光信号。

    OPTICAL COMMUNICATION SYSTEM AND OPTICAL TRANSMITTER
    7.
    发明申请
    OPTICAL COMMUNICATION SYSTEM AND OPTICAL TRANSMITTER 失效
    光通信系统和光传输器

    公开(公告)号:US20090028201A1

    公开(公告)日:2009-01-29

    申请号:US12279399

    申请日:2006-12-27

    IPC分类号: H01S5/18

    摘要: An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InxGa1-xAs (0.15≦x≦0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.

    摘要翻译: 用于利用光信号执行数据传输的光通信系统包括第一光发射机和第一光接收机。 第一光发射器具有包括具有In x Ga 1-x As(0.15 <= x <= 0.35)的量子阱层的多量子阱结构的有源层的第一表面发射激光器,第一表面发射激光器具有振荡波长 范围从1000 nm到1100 nm。 第一光发射器发射由第一表面发射激光器产生的光信号。 第一光接收器通过第一光传输路径连接到第一光发射机,并且通过第一光传输路径接收从第一光发射机发送的光信号。

    Staircase avalanche photodiode
    8.
    发明授权
    Staircase avalanche photodiode 失效
    楼梯雪崩光电二极管

    公开(公告)号:US5539221A

    公开(公告)日:1996-07-23

    申请号:US224110

    申请日:1994-04-07

    CPC分类号: H01L31/1075

    摘要: An avalanche photodiode is provided which consists of a staircase APD with a periodic multilayer structure graded in composition from InAlAs to InGa.sub.x Al.sub.(1-x) As (x>0.1) as the multiplication layer to improve the dark current characteristic. Another photodiode with separate photoabsorption and multiplication regions is provided with an electric-field relaxation layer whose bandgap is wider than that of the photoabsorption and has a triple structure with a highly-doped layer sandwiched between lightly-doped layers. This photodiode incorporates in detail on an n-type InP substrate, an avalanche multiplication layer 13 of a periodic multilayer structure graded in composition from n.sup.- -InAlAs to InGa.sub.x Al.sub.(1-x) As, a p.sup.- -InGaAs photoabsorption layer 17, and an InP electric-field relaxation triple layer 16 consisting of n.sup.-, p.sup.+, and p.sup.- layers between the avalanche multiplication layer 13 and the photoabsorption layer 17.

    摘要翻译: 提供了一种雪崩光电二极管,其由具有从InAlAs至InGaxAl(1-x)As(x> 0.1)组成的周期性多层结构的阶梯APD作为乘法层,以改善暗电流特性。 具有分离的光吸收和倍增区域的另一个光电二极管设置有电场弛豫层,其带隙比光吸收宽,并且具有夹在轻掺杂层之间的高掺杂层的三重结构。 该光电二极管详细结合在n型InP衬底上,从n-InAlAs至InGaxAl(1-x)As,p-InGaAs光吸收层17的组成中分级的周期性多层结构的雪崩倍增层13和 在雪崩倍增层13和光吸收层17之间由n,p +和p-层构成的InP电场弛豫三层16。

    Ultraspeed low-voltage drive avalanche multiplication type semiconductor photodetector
    9.
    发明授权
    Ultraspeed low-voltage drive avalanche multiplication type semiconductor photodetector 失效
    超低压驱动雪崩倍半型光电探测器

    公开(公告)号:US06350998B1

    公开(公告)日:2002-02-26

    申请号:US09335601

    申请日:1999-06-18

    申请人: Masayoshi Tsuji

    发明人: Masayoshi Tsuji

    IPC分类号: H01L31107

    摘要: In an avalanche photodiode having a separated electron injection type light absorbing layer/multiplication layer structure, the multiplication layer comprises In(1−x−y)AlxGayAs with the composition thereof being graded from InAlAs on the light absorbing layer side to InGaAs and preferably has a thickness of not more than 0.1 &mgr;m. By virtue of the above construction, very low noise characteristics and ultraspeed characteristics can be attained in photodetectors at 1 &mgr;m wavelength for long distance optional communications.

    摘要翻译: 在具有分离的电子注入型光吸收层/倍增层结构的雪崩光电二极管中,乘法层包括In(1-xy)Al x Ga y As,其组成从光吸收层侧的InAlAs分级为InGaAs,优选具有厚度 不超过0.1毫米。 通过上述结构,可以在1mum波长的光电探测器中获得非常低的噪声特性和超速特性,用于长距离可选通信。