High frequency module and antenna device
    1.
    发明授权
    High frequency module and antenna device 失效
    高频模块和天线设备

    公开(公告)号:US07019706B2

    公开(公告)日:2006-03-28

    申请号:US10508832

    申请日:2003-03-20

    IPC分类号: H01Q13/00

    CPC分类号: H01P1/2131 H01P1/2138

    摘要: The present invention includes: a first main waveguide 1; a T-branch circuit 3 connected thereto; a first low-pass filter 5 connected thereto; a band-pass filter 7 connected to the first T-branch circuit 3; a first converter 8 connected to the first low-pass filter 5 for converting transmission lines between a waveguide and a microwave integrated circuit; an amplifier 10 connected to the first converter and structured by the microwave integrated circuit; a second converter 9 connected thereto for converting transmission lines between a waveguide and the microwave integrated circuit; a second low-pass filter 6 connected thereto; a second T-branch circuit 4 connected to the second low-pass filter and the band-pass filter 7; and a second main waveguide 2 connected to the second T-branch circuit.

    摘要翻译: 本发明包括:第一主波导1; 与其连接的T分支电路3; 与其连接的第一低通滤波器5; 连接到第一T分支电路3的带通滤波器7; 连接到第一低通滤波器5的第一转换器8,用于转换波导和微波集成电路之间的传输线; 连接到第一转换器并由微波集成电路构成的放大器10; 连接到其上的用于转换波导和微波集成电路之间的传输线的第二转换器9; 与其连接的第二低通滤波器6; 连接到第二低通滤波器和带通滤波器7的第二T分支电路4; 以及连接到第二T分支电路的第二主波导2。

    High frequency module and antenna device
    2.
    发明申请
    High frequency module and antenna device 失效
    高频模块和天线设备

    公开(公告)号:US20050104686A1

    公开(公告)日:2005-05-19

    申请号:US10508832

    申请日:2003-03-20

    CPC分类号: H01P1/2131 H01P1/2138

    摘要: The present invention includes: a first main waveguide 1; a T-branch circuit 3 connected thereto; a first low-pass filter 5 connected thereto; a band-pass filter 7 connected to the first T-branch circuit 3; a first converter 8 connected to the first low-pass filter 5 for converting transmission lines between a waveguide and a microwave integrated circuit; an amplifier 10 connected to the first converter and structured by the microwave integrated circuit; a second converter 9 connected thereto for converting transmission lines between a waveguide and the microwave integrated circuit; a second low-pass filter 6 connected thereto; a second T-branch circuit 4 connected to the second low-pass filter and the band-pass filter 7; and a second main waveguide 2 connected to the second T-branch circuit.

    摘要翻译: 本发明包括:第一主波导1; 与其连接的T分支电路3; 与其连接的第一低通滤波器5; 连接到第一T分支电路3的带通滤波器7; 连接到第一低通滤波器5的第一转换器8,用于转换波导和微波集成电路之间的传输线; 连接到第一转换器并由微波集成电路构成的放大器10; 连接到其上的用于转换波导和微波集成电路之间的传输线的第二转换器9; 与其连接的第二低通滤波器6; 连接到第二低通滤波器和带通滤波器7的第二T分支电路4; 以及连接到第二T分支电路的第二主波导2。

    High-frequency amplifier and high-frequency multistage amplifier
    3.
    发明授权
    High-frequency amplifier and high-frequency multistage amplifier 失效
    高频放大器和高频多级放大器

    公开(公告)号:US06462622B1

    公开(公告)日:2002-10-08

    申请号:US09988326

    申请日:2001-11-19

    IPC分类号: H03F304

    摘要: A T-type circuit having series resistors and a parallel resistor is arranged on the outside of an amplifier, a signal is amplified in the amplifier while stabilizing the signal by using the T-type circuit functioning as a stabilizing circuit, and the amplified signal is output. In this case, values of the series resistors and the parallel resistor of the T-type circuit are determined so as to set an output load impedance obtained by seeing the output side of the high-frequency amplifier from the amplifier to a value near to or slightly lower than a value of the conjugate complex impedance of an output impedance of the amplifier. Therefore, the output signal having a high output electric power and a low distortion can be obtained in the high-frequency amplifier while keeping a gain and a noise characteristic of the high-frequency amplifier.

    摘要翻译: 具有串联电阻器和并联电阻器的T型电路布置在放大器的外部,通过使用用作稳定电路的T型电路稳定信号,放大器中的信号被放大,放大的信号为 输出。 在这种情况下,确定T型电路的串联电阻器和并联电阻器的值,​​以便将通过从放大器看到高频放大器的输出侧而获得的输出负载阻抗设置为接近或等于 略低于放大器的输出阻抗的共轭复阻抗的值。 因此,在保持高频放大器的增益和噪声特性的同时,可以在高频放大器中获得具有高输出功率和低失真的输出信号。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20130020584A1

    公开(公告)日:2013-01-24

    申请号:US13639199

    申请日:2010-04-22

    IPC分类号: H01L29/78

    摘要: In the present invention, provided is a semiconductor device, including: a GaN channel layer which is provided on a substrate and through which electrons run; a barrier layer which is provided on the GaN channel layer and which contains at least one of In, Al, and Ga and contains N; a gate electrode which is provided on the barrier layer; and a source electrode and a drain electrode which are provided on the substrate across the gate electrode, in which, in a portion of the barrier layer between the gate electrode and the drain electrode, a magnitude of polarization of the barrier layer is smaller on the gate electrode side than on the drain electrode side. Thus, PAE can be improved by reducing Rd and Cgd simultaneously.

    摘要翻译: 在本发明中,提供了一种半导体器件,包括:GaN沟道层,其设置在基板上,电子通过该沟道层运行; 阻挡层,其设置在所述GaN沟道层上并且包含In,Al和Ga中的至少一个并且包含N; 设置在所述阻挡层上的栅电极; 以及源极电极和漏电极,其设置在跨越栅电极的基板上,其中在栅电极和漏电极之间的阻挡层的一部分中,阻挡层的极化大小在 栅电极侧比漏极侧。 因此,通过同时减少Rd和Cgd可以改善PAE。

    Ground electrode structure of a spark plug for a gas engine
    9.
    发明授权
    Ground electrode structure of a spark plug for a gas engine 失效
    用于燃气发动机的火花塞的接地电极结构

    公开(公告)号:US07154213B2

    公开(公告)日:2006-12-26

    申请号:US10945876

    申请日:2004-09-22

    IPC分类号: H01T13/20

    CPC分类号: H01T13/32

    摘要: A spark plug for a gas engine includes a ground electrode body and a center electrode body. A ground electrode of the ground electrode body is welded on a surface of a ground electrode base material opposing to the center electrode body. The ground electrode protrudes toward the center electrode body. The ground electrode is made of a material containing iridium or platinum as a main component. The ground electrode base material is made of a heat-resistant nickel alloy. The ground electrode is impacted in a recess of the ground electrode base material. The spark plug satisfies a condition 0.3≦h/H≦0.5 when H represents the thickness of the ground electrode base material in an intrusion direction of the ground electrode, and h represents an intrusion length of the ground electrode that defines a length of the ground electrode impacted in the ground electrode base material in the intrusion direction.

    摘要翻译: 用于燃气发动机的火花塞包括接地电极体和中心电极体。 接地电极体的接地电极焊接在与中心电极体相对的接地电极母材的表面上。 接地电极向中心电极体突出。 接地电极由含有铱或铂作为主要成分的材料制成。 接地电极基材由耐热镍合金制成。 接地电极被冲击在接地电极基体的凹部中。 当H表示接地电极的侵入方向上的接地电极母材的厚度时,火花塞满足条件0.3 <= h / H <= 0.5,h表示接地电极的入射长度, 接地电极在入射方向上撞击接地电极基体材料。