摘要:
Provision of a compound having an anti-HIV activity, particularly an integrase inhibitory activity. A 4-oxoquinoline compound represented by the following formula [I] or a pharmaceutically acceptable salt thereof: wherein each symbol is as defined in the specification. The present invention also relates to a pharmaceutical composition containing the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof, and a pharmaceutically acceptable carrier; an integrase inhibitor, an antiviral agent, anti-HIV agent, and the like, which contains the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof as an active ingredient; an anti-HIV composition containing the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof, and one or more other kinds of anti-HIV activity substances as active ingredients; an anti-HIV agent containing the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof as an active ingredient, which is used for a multiple drug therapy with other anti-HIV agent(s), and the like.
摘要:
Provision of a compound having an anti-HIV activity, particularly an integrase inhibitory activity.A 4-oxoquinoline compound represented by the following formula [I] or a pharmaceutically acceptable salt thereof: wherein each symbol is as defined in the specification. The present invention also relates to a pharmaceutical composition containing the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof, and a pharmaceutically acceptable carrier; an integrase inhibitor, an antiviral agent, anti-HIV agent, and the like, which contains the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof as an active ingredient; an anti-HIV composition containing the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof, and one or more other kinds of anti-HIV activity substances as active ingredients; an anti-HIV agent containing the 4-oxoquinoline compound or a pharmaceutically acceptable salt thereof as an active ingredient, which is used for a multiple drug therapy with other anti-HIV agent(s), and the like.
摘要:
The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 Ω·cm or higher.
摘要:
The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 Ω·cm or higher.
摘要:
A conductive channel formed of an (Sm, Ce)Al11O18 is interconnected in the grain boundaries of aluminum nitride (AlN) particles, thereby reducing temperature dependency of volume resistivity of AlN sintered body; at the same time, the solid solution of the AlN particles is formed with at least one of C and Mg, to prevent the conductive channel from moving in AlN particles, thereby maintaining the volume resistivity within AlN particles at a high value even at a high temperature.
摘要翻译:由(Sm,Ce)Al 11 O 18形成的导电通道在氮化铝(AlN)颗粒的晶界处相互连接,从而降低体积电阻率的温度依赖性 的AlN烧结体; 同时,AlN颗粒的固溶体由C和Mg中的至少一种形成,以防止导电通道在AlN颗粒中移动,从而即使在高的AlN颗粒中也保持AlN颗粒内的体积电阻率高值 温度。
摘要:
An object of the present invention is to provide a ceramic chuck for mounting a wafer so that the number of particles adhered onto the wafer after chucking can be reduced while maintaining a desired Young's Modulus of the chuck. A ceramic chuck 1 has a surface layer 2 contacting a wafer “W” and a substrate portion 6. The surface layer 2 and substrate portion 6 are produced by co-sintering and the surface layer 2 has a porosity of 1% or higher and 10% or lower and larger than that of the substrate portion 6.
摘要:
A fuel cell system is disclosed as having a water storage device 2 whose inside is provided with two partition walls 9, 10 to divide the same into three regions R1, R2, R3, and among these, a middle region R2 is provided with a water guide pipe 11 and a water return pipe 12 by which water is taken out of or returns to the region R2. Provided on the partition walls 9, 10 are communicating mechanisms 13 through which adjacent regions are brought into fluid communication. The communicating mechanisms 13 have structures that are operative to permit water to be taken out of or to be returned to the region R2 while blocking outflow of water from the region R2 to the other regions R1, R3.
摘要:
A gas feed ceramic structure for feeding a gas into a semiconductor-producing apparatus, includes a planar substrate having a gas-feeding surface and a rear surface. The planar substrate has depressions formed from the rear surface toward the gas-feeding surface to define thin portions between the depressions and the gas-feed surface. Each of the thin portions includes a plurality of gas feed holes for feeding the gas to a side of the gas-feeding surface of the substrate, and one open end of the gas feed holes is provided at the gas-feeding surface of the substrate, and the other open end faces the depressions.
摘要:
An electrostatic chuck for attracting an object for treatment. The electrostatic chuck includes a substrate, an insulating dielectric layer and at least one electrode located between the substrate and the insulating dielectric layer. The object is attracted onto the electrode via the insulating dielectric layer. The insulating dielectric layer is between 0.5 mm and 5.0 mm thick, and utilizes a gas-introducing hole to form a gas-diffusing depression on the side of an attractive surface, allowing for more uniform heat conduction. The gas-diffusing depression is between 100 um and 5.0 mm deep. The distance between the bottom surface of the gas-diffusing depression and an electrode may range from 500 .mu.m to 5 mm.
摘要:
An electrostatic chuck for attracting an object to be treated, includes a substrate, an insulating dielectric layer and at least one electrode provided between the substrate and the insulating dielectric layer, wherein the above object is to be attracted onto the electrode via the insulating dielectric layer and an average thickness of the insulating dielectric layer is not less than 0.5 mm and not more than 5.0 mm.