公开(公告)号：US20090179160A1

公开(公告)日：2009-07-16

申请号：US12344938

申请日：2008-12-29

申请人： Naoki TSUKAMOTO ,  Akihisa SHIMOMURA

发明人： Naoki TSUKAMOTO ,  Akihisa SHIMOMURA

IPC分类号： A61N5/00

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L29/458 ,  H01L29/66772 ,  H01L29/78621

摘要： A semiconductor substrate is manufactured with use of a semiconductor substrate manufacturing apparatus including: a cleaning portion in which a bonding surface of a base substrate, and a bonding surface of a single crystal semiconductor substrate are cleaned, wherein the single crystal semiconductor substrate includes an embrittlement region provided in a region at a predetermined depth from its surface; an electromagnetic wave irradiation portion in which the base substrate and the single crystal semiconductor substrate are attached to each other, the single crystal semiconductor substrate is irradiated with an electromagnetic wave, and the single crystal semiconductor substrate is separated using the embrittlement region as a separation plane, so that a single crystal semiconductor layer separated from the single crystal semiconductor substrate is fixed to the base substrate; and a heat treatment portion in which the single crystal semiconductor layer fixed to the base substrate is subjected to heat treatment.

摘要翻译： 使用半导体衬底制造设备制造半导体衬底，该半导体衬底制造设备包括：清洁基底衬底的接合表面和单晶半导体衬底的接合表面的清洁部分，其中单晶半导体衬底包括脆化层 区域设置在距其表面预定深度的区域中; 基底基板和单晶半导体基板彼此连接的电磁波照射部，用电磁波照射单晶半导体基板，使用脆化区域作为分离面分离单晶半导体基板 使得与单晶半导体衬底分离的单晶半导体层固定到基底衬底; 以及其中固定到基底基板的单晶半导体层进行热处理的热处理部分。

公开(公告)号：US20090170286A1

公开(公告)日：2009-07-02

申请号：US12333650

申请日：2008-12-12

申请人： Naoki TSUKAMOTO ,  Akihisa SHIMOMURA

发明人： Naoki TSUKAMOTO ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  B23K26/3576 ,  C30B33/04 ,  H01L21/02686 ,  H01L21/84 ,  H01L29/66772

摘要： A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.

摘要翻译： 制造半导体衬底，其中多个单晶半导体层被固定到具有低耐热性的基底衬底，例如玻璃衬底，其间插入有缓冲层。 制备多个单晶半导体衬底，每个单晶半导体衬底包括缓冲层和通过向每个半导体衬底添加氢离子并含有大量氢而形成的损伤区域。 将这些单晶半导体基板中的一个或多个固定到基底基板上并用频率为300MHz至300GHz的电磁波照射，从而沿着损伤区域分割。 重复单晶半导体衬底的夹持和电磁波照射，制造半导体衬底，其中所需数量的单晶半导体衬底被固定到基底衬底上。

公开(公告)号：US20110092050A1

公开(公告)日：2011-04-21

申请号：US12901005

申请日：2010-10-08

申请人： Akihisa SHIMOMURA ,  Naoki OKUNO ,  Masaki KOYAMA ,  Yasuhiro JINBO

发明人： Akihisa SHIMOMURA ,  Naoki OKUNO ,  Masaki KOYAMA ,  Yasuhiro JINBO

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1262 ,  H01L27/1266 ,  H01L29/66772

摘要： A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.

摘要翻译： 通过用第一离子掺杂第一单晶半导体衬底形成第一脆化层; 通过用第二离子掺杂第二单晶半导体衬底形成第二脆化层; 第一和第二单晶半导体衬底彼此接合; 通过第一热处理在第二单晶半导体衬底上形成第一单晶半导体膜; 绝缘基板接合在第一单晶半导体膜上; 并且通过第二热处理在绝缘基板上形成第一和第二单晶半导体膜。 第一离子的剂量高于第二离子，第一热处理的温度低于第二热处理的温度。

公开(公告)号：US20100029058A1

公开(公告)日：2010-02-04

申请号：US12512141

申请日：2009-07-30

申请人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2007

摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

摘要翻译： 要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。 用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。 激光照射在还原气氛或惰性气氛下进行。

公开(公告)号：US20090239354A1

公开(公告)日：2009-09-24

申请号：US12399047

申请日：2009-03-06

申请人： Hideomi SUZAWA ,  Shinya SASAGAWA ,  Akihisa SHIMOMURA ,  Junpei MOMO ,  Motomu KURATA ,  Taiga MURAOKA ,  Kosei NEI

发明人： Hideomi SUZAWA ,  Shinya SASAGAWA ,  Akihisa SHIMOMURA ,  Junpei MOMO ,  Motomu KURATA ,  Taiga MURAOKA ,  Kosei NEI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.

摘要翻译： 在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层， 通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层， 所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理， 具有激光的晶体半导体层。

公开(公告)号：US20090117716A1

公开(公告)日：2009-05-07

申请号：US12259241

申请日：2008-10-27

申请人： Akihisa SHIMOMURA ,  Junpei Momo ,  Fumito Isaka

发明人： Akihisa SHIMOMURA ,  Junpei Momo ,  Fumito Isaka

IPC分类号： H01L21/62

CPC分类号： H01L21/76254

摘要： To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor device without performing mechanical polishing, and to provide an electronic device using the semiconductor device, planarity of a semiconductor layer is improved and defects in the semiconductor layer are reduced by laser beam irradiation. Accordingly, a high-performance semiconductor device can be provided without performing mechanical polishing. In addition, a semiconductor device is manufactured using a region having the most excellent characteristics in a region irradiated with the laser beam. Specifically, instead of the semiconductor layer in a region which is irradiated with the edge portion of the laser beam, the semiconductor layer in a region which is irradiated with portions of the laser beam except the edge portion is used as a semiconductor element. Accordingly, performance of the semiconductor device can be greatly improved. Moreover, an excellent electronic device can be provided.

摘要翻译： 为了提供使用其中使用耐热性低的衬底的SOI衬底的高性能半导体器件用作基底衬底，以提供不执行机械抛光的高性能半导体器件，并且提供使用该半导体器件的电子器件 通过激光束照射改善了半导体层的平坦度，减小了半导体层的缺陷。 因此，可以提供高性能半导体器件而不进行机械抛光。 此外，使用在激光束照射的区域中具有最优异特性的区域来制造半导体器件。 具体地，代替在激光束的边缘部分照射的区域中的半导体层，将被照射到除了边缘部分之外的部分激光束的区域中的半导体层用作半导体元件。 因此，可以大大提高半导体器件的性能。 此外，可以提供优良的电子装置。

公开(公告)号：US20110212596A1

公开(公告)日：2011-09-01

申请号：US13106158

申请日：2011-05-12

申请人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2007

摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

摘要翻译： 要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。 用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。 激光照射在还原气氛或惰性气氛下进行。

公开(公告)号：US20110136320A1

公开(公告)日：2011-06-09

申请号：US13019626

申请日：2011-02-02

申请人： Shunpei YAMAZAKI ,  Eiji HIGA ,  Yoji NAGANO ,  Tatsuya MIZOI ,  Akihisa SHIMOMURA

发明人： Shunpei YAMAZAKI ,  Eiji HIGA ,  Yoji NAGANO ,  Tatsuya MIZOI ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/268 ,  H01L21/302 ,  H01L21/84

摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.

摘要翻译： 为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。 为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。 因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOL基板。 用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。

公开(公告)号：US20110014780A1

公开(公告)日：2011-01-20

申请号：US12887597

申请日：2010-09-22

申请人： Akihisa SHIMOMURA ,  Hidekazu MIYAIRI ,  Yasuhiro JINBO

发明人： Akihisa SHIMOMURA ,  Hidekazu MIYAIRI ,  Yasuhiro JINBO

IPC分类号： H01L21/268

CPC分类号： H01L21/02678 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1218 ,  H01L27/1285

摘要： A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μM, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.

摘要翻译： 在玻璃基板上形成包含半导体膜的层，并加热。 玻璃基板的热膨胀系数大于6×10-7 /℃，小于或等于38×10-7 /℃。包含半导体膜的加热层用脉冲紫外激光束 具有小于或等于100μm的宽度，宽度与长度之比为1:500或更大，以及激光束轮廓的半宽度小于或等于50μM，使得结晶 形成半导体膜。 作为包含在玻璃基板上形成的半导体膜的层，形成加热后的总应力为-500N / m以上且+ 50N / m以下的层。

公开(公告)号：US20100275990A1

公开(公告)日：2010-11-04

申请号：US12768351

申请日：2010-04-27

申请人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Sho KATO

发明人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Sho KATO

IPC分类号： H01L31/00 ,  H01L21/78 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/1864 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： To provide a novel photoelectric conversion device and a manufacturing method thereof. Over a base substrate having a light-transmitting property, a light-transmitting insulating layer and a single crystal semiconductor layer over the insulating layer are formed. A plurality of first impurity semiconductor layers each having one conductivity type is provided in a band shape in a surface layer of the single crystal semiconductor layer or on a surface of the single crystal semiconductor layer, and a plurality of second impurity semiconductor layers each having a conductivity type which is opposite to the one conductivity type is provided in a band shape in such a manner that the first impurity semiconductor layers and the second impurity semiconductor layers are alternately provided and do not overlap with each other. First electrodes in contact with the first impurity semiconductor layers and second electrodes in contact with the second impurity semiconductor layers are provided, and a back contact cell is formed, whereby a photoelectric conversion device provided with a photo acceptance surface on the base substrate side is formed.

摘要翻译： 提供一种新颖的光电转换装置及其制造方法。 在绝缘层上方形成具有透光性的基底基板，透光绝缘层和单晶半导体层。 在单晶半导体层的表面层或单晶半导体层的表面上，具有一个导电型的多个第一杂质半导体层被设置成带状，以及多个第二杂质半导体层， 以与第一杂质半导体层和第二杂质半导体层交替地设置并且彼此不重叠的带状形式提供与一种导电类型相反的导电类型。 提供与第一杂质半导体层和与第二杂质半导体层接触的第二电极接触的第一电极，形成背接触电池，由此形成在基底侧上设置有光接收表面的光电转换装置 。