Optical deflector
    2.
    发明授权

    公开(公告)号:US11454858B2

    公开(公告)日:2022-09-27

    申请号:US16809787

    申请日:2020-03-05

    Abstract: An optical deflector includes: a light transmitting portion through which a light passes; and a pair of electrodes arranged to oppose to each other with the light transmitting portion interposed therebetween. The light transmitting portion is a transparent ion conductor made of a single crystal or polycrystal. The pair of electrodes apply a predetermined voltage to the light transmitting portion to move ions inside the transparent ion conductor so as to change a traveling direction of the light passing through the light transmitting portion.

    Composition, a process of producing the same, and use of the same

    公开(公告)号:US11142687B2

    公开(公告)日:2021-10-12

    申请号:US16486017

    申请日:2018-03-01

    Abstract: The present invention has for its object to provide a composition in which a photoluminescent carbon nanoparticle having no dependency of an emission wavelength on an excitation wavelength and being enhanced in terms of quantum efficiency is dispersed, a process of producing the same, and an application of the same. The composition of the invention has a photoluminescent carbon nanoparticle dispersed in a water-soluble solvent. The photoluminescent carbon nanoparticle contains a carbon atom, an oxygen atom, a nitrogen atom, and a hydrogen atom if required. As shown in FIG. 6, the photoluminescent carbon nanoparticle has an intensity of a C—N bond and/or C—O bond-derived peak (285.98 eV) larger than that of a C—C bond and/or C—H bond-derived peak (284.95 eV) in terms of X-ray photoelectron spectroscopic spectra, and a Raman spectrum having a peak based on a G-band and a D-band.

    Variable resistance device and method for manufacturing same

    公开(公告)号:US10290802B2

    公开(公告)日:2019-05-14

    申请号:US15536150

    申请日:2016-01-13

    Abstract: The forming voltage of a variable resistance device used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film is sandwiched between a lower electrode and an upper electrode, an island-shaped/particulate region of amorphous aluminum oxide or aluminum oxycarbide is formed on the metal oxide film. Because an oxide deficiency, serving as the nucleus of a filament for implementing an on/off operation of the variable resistance device, is formed from the beginning under the island-shaped or particulate aluminum oxide or the like, the conventional creation of an oxide deficiency by high-voltage application in the initial period of forming can be eliminated. Such a region can be fabricated using a small number of cycles of an ALD process.

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