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    "> Apparatus for isolation of flux materials in
    1.
    发明授权
    Apparatus for isolation of flux materials in "flip-chip" manufacturing 失效
    用于在“倒装芯片”制造中隔离焊剂材料的装置

    公开(公告)号：US5111279A

    公开(公告)日：1992-05-05

    申请号：US576182

    申请日：1990-08-30

    申请人： Nicholas F. Pasch ,  Vahak K. Sahakian ,  Conrad J. Dell'Oca

    发明人： Nicholas F. Pasch ,  Vahak K. Sahakian ,  Conrad J. Dell'Oca

    IPC分类号： G03F7/20 ,  H01L21/56 ,  H01L21/60 ,  H01L31/0232 ,  H05K3/30 ,  H05K3/34

    CPC分类号： G03F7/70433 ,  H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L31/0232 ,  H05K3/3436 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H05K2201/10424 ,  H05K2201/2036 ,  H05K2203/167 ,  H05K3/303 ,  H05K3/3431 ,  H05K3/3489 ,  Y02P70/613

    摘要： A preformed planar structure is interposed between the chip(s) and the substrate in a flip-chip structure, and establishes a minimum gap between the chip(s) and the substrate. Liquid flux may be applied to the preformed planar structure in order that flux is selectively applied to the solder balls (pads) on the chip and the substrate. The preformed planar structure may be provided with through holes in registration with the solder balls on the chip(s) and the substrate. In this case, liquid flux selectively fills the through holes for delivery to the solder balls during soldering. The through holes also aid in maintaining registration of the chip(s) and the substrate. The through holes may be sized to establish a predetermined mechanical structure of solder joints formed by the solder balls when fused together. The preformed planar structure has a planar core and opposing planar faces. The core is formed of thermosetting organic resin, such as polyimide, or non-organic material such as alumina, polished sapphire, beryllium oxide, aluminum nitride or aluminum. The planar faces of the preformed planar structure are formed of thermoplastic resin or thermosetting material, such as polyacetal, epoxide resin or polystyrene. The preformed planar structure tends to draw the chip(s) together to the substrate, establishing a flip-chip structure of mechanical integrity. The preformed planar structure has a thickness of 5-50 microns, preferably on the order of 20-30 microns. Method and apparatus are disclosed.

    摘要翻译： 预成形的平面结构以倒装芯片结构插入在芯片和衬底之间，并且在芯片和衬底之间建立最小的间隙。 可以将液体通量施加到预形成的平面结构，以便将通量选择性地施加到芯片和基板上的焊球（垫）。 预成型的平面结构可以设置有与芯片和基板上的焊球对准的通孔。 在这种情况下，液体焊剂选择性地填充通孔，以在焊接期间输送到焊球。 通孔还有助于保持芯片和基板的配准。 通孔的尺寸可以确定当熔合在一起时由焊球形成的焊点的预定机械结构。 预成型的平面结构具有平面的芯和相对的平面。 芯由聚酰亚胺等热固性有机树脂，氧化铝，抛光蓝宝石，氧化铍，氮化铝，铝等非有机材料构成。 预成形的平面结构的平面由热塑性树脂或热固性材料如聚缩醛，环氧树脂或聚苯乙烯形成。 预制的平面结构倾向于将芯片一起拉到基板上，建立机械完整性的倒装芯片结构。 预成型的平面结构的厚度为5-50微米，优选为20-30微米。 公开了方法和装置。

    Method and apparatus for isolation of flux materials in flip-chip manufacturing
    3.
    发明授权
    Method and apparatus for isolation of flux materials in flip-chip manufacturing 失效
    用于在倒装芯片制造中隔离焊剂材料的方法和装置

    公开(公告)号：US5168346A

    公开(公告)日：1992-12-01

    申请号：US775009

    申请日：1991-10-11

    申请人： Nicholas F. Pasch ,  Vahak K. Sahakian ,  Conrad J. Dell'Oca

    发明人： Nicholas F. Pasch ,  Vahak K. Sahakian ,  Conrad J. Dell'Oca

    IPC分类号： G03F7/20 ,  H01L21/56 ,  H01L21/60 ,  H01L31/0232 ,  H05K3/30 ,  H05K3/34

    CPC分类号： G03F7/70433 ,  H01L21/563 ,  H01L24/29 ,  H01L24/81 ,  H01L31/0232 ,  H05K3/3436 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H05K2201/10424 ,  H05K2201/2036 ,  H05K2203/167 ,  H05K3/303 ,  H05K3/3431 ,  H05K3/3489 ,  Y02P70/613

    摘要： A preformed planar structure is interposed between the chip(s) and the substrate in a flip-chip structure, and establishes a minimum gap between the chip(s) and the substrate. Liquid flux may be applied to the preformed planar structure in order that flux is selectively applied to the solder balls (pads) on the chip and the substrate. The preformed planar structure may be provided with through holes in registration with the solder balls on the chip(s) and the substrate. In this case, liquid flux selectively fills the through holes for delivery to the solder balls during soldering. The through holes also aid in maintaining registration of the chip(s) and the substrate. The through holes may be sized to establish a predetermined mechanical structure of solder joints formed by the solder balls when fused together. The preformed planar structure has a planar core and opposing planar faces. The core is formed of thermosetting organic resin, such as polyimide, or non-organic material such as alumina, polished sapphire, beryllium oxide, aluminum nitride or aluminum. The planar faces of the preformed planar structure are formed of thermoplastic resin or thermosetting material, such as polyacetal, expoxide resin or polystyrene. The preformed planar structure tends to draw the chip(s) together to the substrate, establishing a flip-chip structure of mechanical integrity. The preformed planar structure has a thickness of 5-50 microns, preferably on the order of 20-30 microns. Method and apparatus are disclosed.

    摘要翻译： 预成形的平面结构以倒装芯片结构插入在芯片和衬底之间，并且在芯片和衬底之间建立最小的间隙。 可以将液体通量施加到预形成的平面结构，以便将通量选择性地施加到芯片和基板上的焊球（垫）。 预成型的平面结构可以设置有与芯片和基板上的焊球对准的通孔。 在这种情况下，液体焊剂选择性地填充通孔，以在焊接期间输送到焊球。 通孔还有助于保持芯片和基板的配准。 通孔的尺寸可以确定当熔合在一起时由焊球形成的焊点的预定机械结构。 预成型的平面结构具有平面的芯和相对的平面。 芯由聚酰亚胺等热固性有机树脂，氧化铝，抛光蓝宝石，氧化铍，氮化铝，铝等非有机材料构成。 预成型平面结构的平面由热塑性树脂或热固性材料如聚缩醛，环氧树脂或聚苯乙烯形成。 预制的平面结构倾向于将芯片一起拉到基板上，建立机械完整性的倒装芯片结构。 预成型的平面结构的厚度为5-50微米，优选为20-30微米。 公开了方法和装置。

    Double metal HCMOS compacted array
    5.
    发明授权
    Double metal HCMOS compacted array 失效
    双金属HCMOS压实阵列

    公开(公告)号：US4884118A

    公开(公告)日：1989-11-28

    申请号：US158066

    申请日：1988-02-12

    申请人： Alex C. Hui ,  Anthony Y. Wong ,  Conrad J. Dell'Oca ,  Daniel Wong ,  Roger Szeto

    发明人： Alex C. Hui ,  Anthony Y. Wong ,  Conrad J. Dell'Oca ,  Daniel Wong ,  Roger Szeto

    IPC分类号： H01L27/118

    CPC分类号： H01L27/11807

    摘要： A gate array is provided in which active areas within the substrate are arranged in alternating columns of opposite conductivity type and symmetrical about the center lines through each column so that CMOS devices can be advantageously formed by allocating only small increments of active area to metal routing. The substrate and well taps are also symmetrical about the column center line. The active area symmetry allows p-channel and n-channel transistors to be combined where the p-channel transistor is on either the right or left, thus increasing the flexibility in placing the elements within the integrated circuit chip.

    摘要翻译： 提供了一种栅极阵列，其中衬底内的有源区域被布置在相反导电类型的交替列中，并且通过每一列关于中心线对称，使得可以通过仅将小的有效面积的增量分配给金属布线来有利地形成CMOS器件。 衬底和阱抽头也关于柱中心线对称。 有源区对称性允许p沟道晶体管和n沟道晶体管组合在p沟道晶体管位于右侧或左侧，从而增加将元件放置在集成电路芯片内的灵活性。