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1.发明授权Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine 失效使用胺进行外延生长期间II-VI半导体化合物的氮掺杂方法
公开(公告)号：US5354708A
公开(公告)日：1994-10-11
申请号：US091634
申请日：1993-07-14
IPC分类号： C30B29/48 , C23C16/18 , C30B25/02 , C30B25/10 , H01L21/205 , H01L21/365 , H01L21/20
CPC分类号： H01L21/02395 , C30B25/02 , C30B25/105 , C30B29/48 , H01L21/0256 , H01L21/02579 , H01L21/0262 , Y10S148/041 , Y10S148/064
摘要： The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature.
摘要翻译： 通过使用叔丁胺作为掺杂剂载体，II-VI半导体化合物的生长外延层中的N受体的浓度增强，并且通过使用光辅助生长进一步增强，其使用波长为 至少高于化合物在生长温度下的带隙能量。
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公开(公告)号：US5399524A
公开(公告)日：1995-03-21
申请号：US133545
申请日：1993-10-07
CPC分类号： H01L33/40 , H01L21/445 , H01L33/28
摘要： A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200.degree. C. for more than two hours.
摘要翻译： 在衬底上提供的p型ZnSe或ZnSSe层上提供改进的欧姆接触的方法，包括将该层浸入加热到超过200℃的Hg浴中超过2小时。
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公开(公告)号：US5293074A
公开(公告)日：1994-03-08
申请号：US878657
申请日：1992-05-05
IPC分类号： H01L21/28 , H01L21/445 , H01L33/00 , H01L33/28 , H01L33/40 , H01L23/48 , H01L29/46 , H01L29/62
CPC分类号： H01L33/40 , H01L21/445 , H01L33/28
摘要： A semiconductor structure with a p-type ZnSe layer has an improved ohmic contact consisting of a layer of Hg.sub.x Zn.sub.1-x Te.sub.a Se.sub.b Sc where x=0-1 with x being 0 at the surface of the ZnSe layer and increasing thereafter, a, b and c each =0-1 and a+b+c=1.
摘要翻译： 具有p型ZnSe层的半导体结构具有改善的欧姆接触，其由ZnSe层的表面处的x x = 0-1，x为0的Hg x Zn 1-x Te e S Sc Sc层组成，之后增加a，b和c = 0-1，a + b + c = 1。
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4.发明授权Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine 失效使用胺进行外延生长期间II-VI半导体化合物的光辅助氮掺杂
公开(公告)号：US5547897A
公开(公告)日：1996-08-20
申请号：US259944
申请日：1994-06-15
IPC分类号： C30B29/48 , C23C16/18 , C30B25/02 , C30B25/10 , H01L21/205 , H01L21/365 , H01L21/22
CPC分类号： C30B25/02 , C30B25/105 , C30B29/48 , H01L21/02395 , H01L21/0256 , H01L21/02579 , H01L21/0262 , Y10S148/064
摘要： The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.
摘要翻译： 通过使用叔丁胺作为掺杂剂载体，II-VI半导体化合物的生长外延层中的N受体的浓度增强，并且通过使用光辅助生长进一步增强，其使用波长为 在200-250nm的范围内。
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5.发明授权Photo-assisted annealing process for activation of acceptors in semiconductor compound layers 失效用于激活半导体化合物层中的受体的光辅助退火工艺
公开(公告)号：US5786233A
公开(公告)日：1998-07-28
申请号：US603959
申请日：1996-02-20
IPC分类号： H01L21/205 , H01L21/365 , H01L21/00
CPC分类号： H01L21/02579 , H01L21/0237 , H01L21/02381 , H01L21/0254 , H01L21/02551
摘要： Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing.
摘要翻译： 通过光辅助退火，通过化学气相沉积提供的p掺杂的II-VI和III-V半导体化合物层的活性受主浓度增加。
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6.发明授权Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced 失效生产II-IV半导体化合物和II-VI半导体化合物的超低压金属 - 有机气相外延（MOVPE）方法
公开(公告)号：US6113691A
公开(公告)日：2000-09-05
申请号：US451341
申请日：1995-05-26
CPC分类号： H01L33/0087 , C30B25/02 , C30B29/48 , H01S2304/04 , H01S5/327
摘要： Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method including the steps of subjecting a substrate to organometallic and hydride precursor compounds in a MOVPE reactor at ultra low pressure, i.e. a pressure in the range of about 10 to 1 mTorr, whereby the organometallic and hydride precursor compounds react at a substrate surface without substantial reaction in the gas phase. The epitaxial layers and semiconductor compounds are useful in blue laser devices.
摘要翻译： 提供半导体化合物及其制造方法，其中使用使用MOVPE生长II-VI半导体化合物的至少一个外延层的方法，所述方法包括以下步骤：将基底经受有机金属和氢化物前体化合物 MOVPE反应器在超低压下，即在约10至1mTorr范围内的压力，由此有机金属和氢化物前体化合物在基体表面反应而在气相中没有实质的反应。 外延层和半导体化合物可用于蓝色激光器件。
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7.发明授权Method of growing epitaxial layers of N-doped II-VI semiconductor compounds 失效生长N掺杂II-VI半导体化合物的外延层的方法
公开(公告)号：US5273931A
公开(公告)日：1993-12-28
申请号：US894308
申请日：1992-06-04
申请人： Nikhil Taskar , Babar A. Khan , Donald R. Dorman
发明人： Nikhil Taskar , Babar A. Khan , Donald R. Dorman
IPC分类号： C30B25/02 , H01L21/365 , H01L21/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/48 , H01L21/02395 , H01L21/0256 , H01L21/02573 , Y10S148/041 , Y10S148/064 , Y10S438/925
摘要： Epitaxial layers of N-doped II-VI semiconductor compounds are grown on GaAs substrates by MOCVD using FME. Separating the growth and doping by alternating introduction of (1) the semiconductor cation and anion and (2) the cation and the dopant increases the level of doping, the level of activation, and the crystal quality.
摘要翻译： 通过使用FME的MOCVD在GaAs衬底上生长N掺杂的II-VI半导体化合物的外延层。 通过交替引入（1）半导体阳离子和阴离子和（2）阳离子和掺杂剂来分离生长和掺杂，增加掺杂水平，活化水平和晶体质量。
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8.发明授权AC magnetic susceptometer with odd harmonic measurement for analyzing superconductive magnetic materials 失效交流磁力计，用于分析超导磁性材料的奇次谐波测量
公开(公告)号：US5283524A
公开(公告)日：1994-02-01
申请号：US795296
申请日：1991-11-19
CPC分类号： G01N27/72 , G01R33/1238 , Y10S505/726 , Y10S505/843
摘要： An improved AC susceptometer and methodology for its use which is particularly suitable for the characterization of the properties of superconducting materials. Added to the circuitry of a conventional AC susceptometer is frequency domain analytical equipment for measuring the induced magnetic response. The addition of frequency domain measuring equipment permits the determination of the harmonic components of the induced magnetic response. The measurement of the harmonic components of the response also provides novel methodology for studying the phenomena of flux penetration, flux pinning and movement and permits the measurement of parameters such as lower critical field, critical temperatures, and the irreversibility line.
摘要翻译： 改进的交流阻抗计及其使用的方法，其特别适用于表征超导材料的性质。 添加到常规AC智能电表的电路中，是用于测量感应磁响应的频域分析设备。 频域测量设备的添加允许确定感应磁响应的谐波分量。 响应的谐波分量的测量还提供了用于研究磁通穿透，磁通钉扎和运动现象的新方法，并允许测量诸如较低临界场，临界温度和不可逆线等参数。
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9.发明授权
公开(公告)号：US5280240A
公开(公告)日：1994-01-18
申请号：US795295
申请日：1991-11-19
CPC分类号： G01R33/1238 , G01N27/72 , Y10S505/726 , Y10S505/843
摘要： An improved AC susceptometer and methodology for its use which is particularly suitable for the characterization of the properties of superconducting materials. Added to the circuitry of a conventional AC susceptometer is frequency domain analytical equipment for measuring the induced magnetic response. The addition of frequency domain measuring equipment permits the determination of the harmonic components of the induced magnetic response. The measurement of the harmonic components of the response also provides novel methodology for studying the phenomena of flux penetration, flux pinning and movement and permits the measurement of parameters such as lower critical field, critical temperatures, and the irreversibility line.
摘要翻译： 改进的交流阻抗计及其使用的方法，其特别适用于表征超导材料的性质。 添加到常规交流电抗器的电路中是用于测量诱导磁响应的频域分析设备。 频域测量设备的添加允许确定感应磁响应的谐波分量。 响应的谐波分量的测量还提供了新颖的方法，用于研究磁通穿透，磁通钉扎和运动的现象，并允许测量诸如较低临界场，临界温度和不可逆线等参数。
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10.发明授权Apparatus and methodology for the non-contact testing of materials for superconductivity by detecting odd harmonics above a threshold 失效通过检测高于阈值的奇次谐波，对超导材料进行非接触式测试的装置和方法
公开(公告)号：US5004726A
公开(公告)日：1991-04-02
申请号：US380162
申请日：1989-07-14
CPC分类号： G01R33/1238 , Y10S505/726 , Y10S505/727 , Y10S505/786 , Y10S505/843
摘要： Apparatus and methodology for the rapid and inexpensive characterization of superconducting materials. The method and apparatus induces an alternating magnetic field in the sample to be tested. If the material is a superconductor odd harmonics are generated in the alternating magnetic response of the material near the transition temperature. The superconducting transitions are manifested by a peak or peaks in the odd harmonic components of the alternating magnetic response as a function of temperature. The peaks of the harmonic components are detected to indicate the presence and number of superconducting transitions.
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