Method of diagnosing integrated logic circuit
    1.
    发明授权
    Method of diagnosing integrated logic circuit 失效
    诊断集成逻辑电路的方法

    公开(公告)号:US4996659A

    公开(公告)日:1991-02-26

    申请号:US84153

    申请日:1987-08-12

    IPC分类号: G01R31/305 G01R31/3193

    CPC分类号: G01R31/3193 G01R31/305

    摘要: A method of diagnosis of an integrated logic circuit having function blocks, in which a test signal is supplied to the logic circuit; an input signal to and an output signal from at least one of the function blocks are detected by the use of a contactless probing device such as an electron beam probing device or laser beam probing device; simulation is carried out of a normal logic operation of the function block with the detected input signal to provide a simulated output signal; the detected and simulated output signals are compared with each other; and the function block is determined as being normal or abnormal according to the result of the comparison. When the function block includes plural logic elements, the cause of the abnormality may be traced back to a faulty function element by detecting the output of a function element by a contactless probing device, comparing the detected output with a corresponding simulated output and repeating the detection and comparison on other function elements in the function block until the comparison results in coincidence. The function element which receives the signal providing the coincidence as a result of the comparison is determined as the faulty function element.

    摘要翻译: 一种诊断具有功能块的集成逻辑电路的方法,其中测试信号被提供给逻辑电路; 通过使用诸如电子束探测装置或激光束探测装置的非接触探测装置来检测来自至少一个功能块的输入信号和输出信号; 利用检测到的输入信号对功能块的正常逻辑运算进行仿真,以提供模拟输出信号; 检测和模拟的输出信号相互比较; 并且根据比较的结果将功能块确定为正常或异常。 当功能块包括多个逻辑元件时,通过非接触探测装置检测功能元件的输出,将检测到的输出与对应的模拟输出进行比较并重复检测,可以将异常的原因追溯到故障功能元件 并比较功能块中的其他功能元素,直到比较结果重合。 将作为比较结果提供一致的信号的功能元件确定为故障功能元件。

    High-voltage capacitor, high-voltage capacitor device and magnetron
    2.
    发明授权
    High-voltage capacitor, high-voltage capacitor device and magnetron 失效
    高压电容器,高压电容器和磁控管

    公开(公告)号:US07460353B2

    公开(公告)日:2008-12-02

    申请号:US11386742

    申请日:2006-03-23

    IPC分类号: H01G4/35 H01G4/005

    CPC分类号: H01C7/10 H01C7/102

    摘要: A high-voltage capacitor is intended for use in a high-voltage capacitor device having at least two through conductors. The high-voltage capacitor includes a dielectric porcelain, an individual electrode, and a common electrode. At least two spaced individual electrodes are provided on one surface of the dielectric porcelain and intended to be connected one-to-one to the through conductors positioned outside the dielectric porcelain. The common electrode is provided on the other surface of the dielectric porcelain.

    摘要翻译: 高电压电容器用于具有至少两个贯通导体的高压电容器装置。 高压电容器包括电介质瓷,单独电极和公共电极。 在电介质陶瓷的一个表面上设置至少两个间隔开的单独电极,并且意图与位于电介质瓷瓷外部的贯通导体一对一连接。 公共电极设置在电介质瓷的另一面上。

    Manufacturing method of semiconductor device
    3.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US08629055B2

    公开(公告)日:2014-01-14

    申请号:US12565333

    申请日:2009-09-23

    IPC分类号: H01L21/316

    摘要: A coating solution of SOG is applied on a silicon oxynitride film (11) and precured. As a result, moisture contained in the coating solution volatilizes, and an SOG film (12) is formed. Next, a coating solution of SOG is applied on the SOG film (12) and precured. As a result, an SOG film (13) is formed. Thereafter, a coating solution of SOG is applied on the SOG film (13) and precured. As a result, an SOG film (14) is formed. Subsequently, a main cure of the SOG films (12, 13, and 14) is performed. The viscosity of the coating solution of SOG used for forming the SOG film (12) is lower than those of the coating solutions of SOG used for forming the SOG films (13 and 14).

    摘要翻译: 将SOG涂层溶液涂覆在氮氧化硅膜(11)上并预硫化。 结果,涂布液中含有的水分挥发,形成SOG膜(12)。 接着,将SOG的涂布液涂布在SOG膜(12)上并进行预固化。 结果,形成SOG膜(13)。 此后,将SOG涂层溶液涂布在SOG膜(13)上并预硫化。 结果,形成SOG膜(14)。 随后,执行SOG膜(12,13和14)的主要固化。 用于形成SOG膜(12)的SOG涂层溶液的粘度低于用于形成SOG膜(13和14)的SOG涂层溶液的粘度。

    High-voltage feed-through capacitor and magnetron
    5.
    发明授权
    High-voltage feed-through capacitor and magnetron 失效
    高压直流电容器和磁控管

    公开(公告)号:US07184256B1

    公开(公告)日:2007-02-27

    申请号:US11444493

    申请日:2006-06-01

    IPC分类号: H01G4/35 H01G4/236

    CPC分类号: H01G4/35 H01G4/236

    摘要: A high-voltage feed-through capacitor includes: a capacitor element; a grounding metal fitting; an insulating resin; two through conductors; an insulating cover; and an insulating tube. The capacitor element has two separate electrodes on one side and one common electrode on the other side and is mounted on one side of the grounding metal fitting with the common electrode being connected to the same side of the grounding metal fitting. The insulating resin fills a space inside the capacitor element. Each through conductor has a rod-like conductor portion passing through the grounding metal fitting and the capacitor element and connected to the separate electrode. At least a portion of the insulating tube is attached to the rod-like conductor portion within the capacitor element. The insulating cover is attached to the rod-like conductor portion to have one end thereof in contact with one end of the insulating tube.

    摘要翻译: 高压直流电容器包括:电容器元件; 接地金属配件; 绝缘树脂; 两根导线; 绝缘盖; 和绝缘管。 电容器元件在一侧具有两个单独的电极,另一侧具有一个公共电极,并且安装在接地金属配件的一侧,公共电极连接到接地金属配件的同一侧。 绝缘树脂填充电容器元件内的空间。 每个贯通导体具有穿过接地金属配件和电容器元件并连接到单独电极的棒状导体部分。 绝缘管的至少一部分附接到电容器元件内的棒状导体部分。 绝缘盖附接到杆状导体部分,以使其一端与绝缘管的一端接触。

    High voltage capacitor and magnetron

    公开(公告)号:US20050073799A1

    公开(公告)日:2005-04-07

    申请号:US10913367

    申请日:2004-08-09

    CPC分类号: H01G4/35

    摘要: A capacitor has electrodes at surfaces thereof, with one of the electrodes secured onto one surface of a grounding metal. Through conductors pass through the capacitor and the grounding metal and are connected to the other electrodes so as to achieve electrical continuity. An insulating case is provided at one surface of the grounding metal, with one end of the insulating case fitted around the external circumference of the raised portion of the grounding metal. Insulating resin fills a space inside the insulating case, the internal space of the grounding metal and a space around the capacitor. The insulating resin comprises an epoxy resin containing a brominated fire retardant, and the brominated fire retardant is a brominated aromatic glycidyl ether.

    HIGH-VOLTAGE FEED-THROUGH CAPACITOR AND MAGNETRON
    7.
    发明申请
    HIGH-VOLTAGE FEED-THROUGH CAPACITOR AND MAGNETRON 失效
    高电压馈电电容和磁铁

    公开(公告)号:US20070047174A1

    公开(公告)日:2007-03-01

    申请号:US11444493

    申请日:2006-06-01

    IPC分类号: H01G4/35

    CPC分类号: H01G4/35 H01G4/236

    摘要: A high-voltage feed-through capacitor includes: a capacitor element; a grounding metal fitting; an insulating resin; two through conductors; an insulating cover; and an insulating tube. The capacitor element has two separate electrodes on one side and one common electrode on the other side and is mounted on one side of the grounding metal fitting with the common electrode being connected to the same side of the grounding metal fitting. The insulating resin fills a space inside the capacitor element. Each through conductor has a rod-like conductor portion passing through the grounding metal fitting and the capacitor element and connected to the separate electrode. At least a portion of the insulating tube is attached to the rod-like conductor portion within the capacitor element. The insulating cover is attached to the rod-like conductor portion to have one end thereof in contact with one end of the insulating tube.

    摘要翻译: 高压直流电容器包括:电容器元件; 接地金属配件; 绝缘树脂; 两根导线; 绝缘盖; 和绝缘管。 电容器元件在一侧具有两个单独的电极,另一侧具有一个公共电极,并且安装在接地金属配件的一侧,公共电极连接到接地金属配件的同一侧。 绝缘树脂填充电容器元件内的空间。 每个贯通导体具有穿过接地金属配件和电容器元件并连接到单独电极的棒状导体部分。 绝缘管的至少一部分附接到电容器元件内的棒状导体部分。 绝缘盖附接到杆状导体部分,以使其一端与绝缘管的一端接触。

    Photosensitive material processing apparatus and photosensitive material processing method using the same
    8.
    发明授权
    Photosensitive material processing apparatus and photosensitive material processing method using the same 失效
    感光材料处理装置及使用其的感光材料处理方法

    公开(公告)号:US06672778B2

    公开(公告)日:2004-01-06

    申请号:US10252833

    申请日:2002-09-24

    IPC分类号: G03D1300

    CPC分类号: G03D3/132

    摘要: At least two (groups of) sensors forming an insertion detection sensor are offset from each other in the conveyance direction of a photosensitive material. An insertion speed, which is different for each manual insertion event, is obtained based on the time difference when sensors that have been offset from each other detect the leading end of the photosensitive material. The length of the photosensitive material in the conveyance direction thereof is accurately computed based on the insertion speed and other information. By correcting the errors due to the changeable insertion state of the photosensitive material caused by manual insertion by the operator, the process area of the photosensitive material, required for calculating the amount of replenisher to be replenished, is accurately obtained. Therefore, the amount of the replenisher is appropriately determined and the process capacity of the developer or the fixing solution can constantly be maintained at the satisfactory level.

    摘要翻译: 形成插入检测传感器的至少两个(组)传感器在感光材料的传送方向上彼此偏移。 基于彼此偏移的传感器检测感光材料的前端的时间差,获得每个手动插入事件不同的插入速度。 基于插入速度和其他信息,精确地计算感光材料在其传送方向上的长度。 通过校正由操作者的手动插入引起的感光材料的可变插入状态的错误,可以精确地获得计算补充量的补充剂量所需的感光材料的处理面积。 因此,适当地确定补充剂的量,并且可以不断地将显影剂或定影液的处理能力保持在令人满意的水平。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    10.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号:US20100009544A1

    公开(公告)日:2010-01-14

    申请号:US12565333

    申请日:2009-09-23

    IPC分类号: H01L21/31

    摘要: A coating solution of SOG is applied on a silicon oxynitride film (11) and precured. As a result, moisture contained in the coating solution volatilizes, and an SOG film (12) is formed. Next, a coating solution of SOG is applied on the SOG film (12) and precured. As a result, an SOG film (13) is formed. Thereafter, a coating solution of SOG is applied on the SOG film (13) and precured. As a result, an SOG film (14) is formed. Subsequently, a main cure of the SOG films (12, 13, and 14) is performed. The viscosity of the coating solution of SOG used for forming the SOG film (12) is lower than those of the coating solutions of SOG used for forming the SOG films (13 and 14).

    摘要翻译: 将SOG涂层溶液涂覆在氮氧化硅膜(11)上并预硫化。 结果,涂布液中含有的水分挥发,形成SOG膜(12)。 接着,将SOG的涂布液涂布在SOG膜(12)上并进行预固化。 结果,形成SOG膜(13)。 此后,将SOG涂层溶液涂布在SOG膜(13)上并预硫化。 结果,形成SOG膜(14)。 随后,执行SOG膜(12,13和14)的主要固化。 用于形成SOG膜(12)的SOG涂层溶液的粘度低于用于形成SOG膜(13和14)的SOG涂层溶液的粘度。