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    Optical semiconductor device having diffraction grating
    4.
    发明授权
    Optical semiconductor device having diffraction grating 失效
    具有衍射光栅的光学半导体器件

    公开(公告)号：US07738523B2

    公开(公告)日：2010-06-15

    申请号：US11716017

    申请日：2007-03-09

    申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Yasuhiko Arakawa

    发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Yasuhiko Arakawa

    IPC分类号： H01S5/00

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/0655 ,  H01S5/1064 ,  H01S5/1212 ,  H01S5/1225 ,  H01S5/1237 ,  H01S5/22 ,  H01S5/3412 ,  H01S5/34306

    摘要： An optical semiconductor device includes: a waveguide structure including layers grown over a semiconductor substrate, having a width defined by sidewalls formed by etching the layers, and including a wide, a narrow, and an intermediate width portion, formed along a propagation direction; and a diffraction grating formed on the sidewalls of at least one of the wide and narrow width portions of the waveguide structure, the diffraction grating having vertical grooves periodically disposed along the propagation direction and defining a wavelength of propagation light, wherein the narrow width portion is formed in such a manner that a loss of 50% or more is given to a higher order transverse mode. An optical semiconductor device having a vertical diffraction grating is provided which can suppress generation of a higher order transverse mode and an increase in a device resistance.

    摘要翻译： 一种光学半导体器件包括：波导结构，包括在半导体衬底上生长的层，其具有由蚀刻所述层形成的侧壁限定的宽度，并且包括沿传播方向形成的宽，窄和中间宽度部分; 以及衍射光栅，其形成在所述波导结构的宽和窄宽度部分中的至少一个的侧壁上，所述衍射光栅具有沿传播方向周期性地设置并且限定传播光的波长的垂直凹槽，其中窄宽度部分 形成为对高阶横模具有50％以上的损失。 提供了具有垂直衍射光栅的光学半导体器件，其可以抑制高阶横模的产生和器件电阻的增加。

    Semiconductor light emitting element, method of manufacturing the same and semiconductor light emitting device
    5.
    发明申请
    Semiconductor light emitting element, method of manufacturing the same and semiconductor light emitting device 审中-公开
    半导体发光元件及其制造方法以及半导体发光元件

    公开(公告)号：US20080042122A1

    公开(公告)日：2008-02-21

    申请号：US11889364

    申请日：2007-08-13

    申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Yoshiaki Nakata ,  Yasuhiko Arakawa

    发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Yoshiaki Nakata ,  Yasuhiko Arakawa

    IPC分类号： H01L33/00

    CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/028 ,  H01S5/12 ,  H01S5/1237 ,  H01S5/18311 ,  H01S5/3086 ,  H01S5/3412 ,  H01S5/34353

    摘要： A semiconductor light emitting element improving luminous efficiency has: a semiconductor substrate, an N-type cladding layer formed over the substrate; a barrier layer formed over the cladding layer; a quantum dot layer formed over the barrier layer, the quantum dot layer including quantum dots having a band gap smaller than that of the barrier layer and a buried layer having a band gap larger than that of the quantum dots, the buried layer covering a sidewall of the quantum dots; a P-type semiconductor layer formed over the quantum dot layer, the semiconductor layer having a band gap smaller than that of the barrier layer; a barrier layer formed over the P-type semiconductor layer, the barrier layer having a band gap larger than those of the quantum dots and of the semiconductor layer; and a p-type cladding layer formed over the barrier layer. Therefore, holes generated in the P-type semiconductor layer are prevented from flowing into the barrier layer and the buried layer.

    摘要翻译： 提高发光效率的半导体发光元件具有半导体衬底，形成在衬底上的N型覆层; 形成在所述包覆层上的阻挡层; 形成在所述阻挡层上的量子点层，所述量子点层包括具有比所述阻挡层的带隙小的带隙的量子点和具有比所述量子点的带隙大的带隙的掩埋层，所述掩埋层覆盖侧壁 的量子点; 形成在所述量子点层上的P型半导体层，所述半导体层具有比所述阻挡层的带隙小的带隙; 形成在所述P型半导体层上的阻挡层，所述阻挡层的带隙大于所述量子点和所述半导体层的带隙; 以及形成在阻挡层上的p型覆层。 因此，防止在P型半导体层中产生的空穴流入阻挡层和掩埋层。

    Optical semiconductor device having diffraction grating
    6.
    发明申请
    Optical semiconductor device having diffraction grating 失效
    具有衍射光栅的光学半导体器件

    公开(公告)号：US20070248134A1

    公开(公告)日：2007-10-25

    申请号：US11716017

    申请日：2007-03-09

    申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Yasuhiko Arakawa

    发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Yasuhiko Arakawa

    IPC分类号： H01S5/12

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/0655 ,  H01S5/1064 ,  H01S5/1212 ,  H01S5/1225 ,  H01S5/1237 ,  H01S5/22 ,  H01S5/3412 ,  H01S5/34306

    摘要： An optical semiconductor device includes: a waveguide structure including layers grown over a semiconductor substrate, having a width defined by sidewalls formed by etching the layers, and including a wide, a narrow, and an intermediate width portion, formed along a propagation direction; and a diffraction grating formed on the sidewalls of at least one of the wide and narrow width portions of the waveguide structure, the diffraction grating having vertical grooves periodically disposed along the propagation direction and defining a wavelength of propagation light, wherein the narrow width portion is formed in such a manner that a loss of 50% or more is given to a higher order transverse mode. An optical semiconductor device having a vertical diffraction grating is provided which can suppress generation of a higher order transverse mode and an increase in a device resistance.

    摘要翻译： 一种光学半导体器件包括：波导结构，包括在半导体衬底上生长的层，其具有由蚀刻所述层形成的侧壁限定的宽度，并且包括沿传播方向形成的宽，窄和中间宽度部分; 以及衍射光栅，其形成在所述波导结构的宽和窄宽度部分中的至少一个的侧壁上，所述衍射光栅具有沿传播方向周期性地设置并且限定传播光的波长的垂直凹槽，其中窄宽度部分 形成为对高阶横模具有50％以上的损失。 提供了具有垂直衍射光栅的光学半导体器件，其可以抑制高阶横模的产生和器件电阻的增加。

    Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
    7.
    发明授权
    Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method 有权
    具有p型量子点结构的有源层的光半导体器件及其制造方法

    公开(公告)号：US08232125B2

    公开(公告)日：2012-07-31

    申请号：US12457677

    申请日：2009-06-18

    申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

    发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

    IPC分类号： H01L21/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/0655 ,  H01S5/3086 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34353 ,  H01S2301/18

    摘要： An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

    摘要翻译： 具有p型量子点结构的有源层设置在由第一导电类型的半导体材料制成的下包层上。 上覆层设置在有源层上。 上包层由半导体材料制成，并且包括脊部和盖部。 脊部沿一个方向延伸，并且盖部分覆盖脊部两侧的表面。 电容减小区域设置在脊部的两侧并且至少到达盖部的下表面。 电容减小区域具有比脊部分的第一导电类型或更高的电阻率，并且脊部分具有第二导电类型。 如果下包层为n型，则电容减小区域至少到达下包层的上表面。

    Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
    9.
    发明申请
    Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method 有权
    具有p型量子点结构的有源层的光半导体器件及其制造方法

    公开(公告)号：US20080157059A1

    公开(公告)日：2008-07-03

    申请号：US11976120

    申请日：2007-10-22

    申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

    发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

    IPC分类号： H01S5/34 ,  H01L33/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/0655 ,  H01S5/3086 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34353 ,  H01S2301/18

    摘要： An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

    摘要翻译： 具有p型量子点结构的有源层设置在由第一导电类型的半导体材料制成的下包层上。 上覆层设置在有源层上。 上包层由半导体材料制成，并且包括脊部和盖部。 脊部沿一个方向延伸，并且盖部分覆盖脊部两侧的表面。 电容减小区域设置在脊部的两侧并且至少到达盖部的下表面。 电容减小区域具有比脊部分的第一导电类型或更高的电阻率，并且脊部分具有第二导电类型。 如果下包层为n型，则电容减小区域至少到达下包层的上表面。

    Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method
    10.
    发明申请
    Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method 有权
    具有设置在波导两侧的衍射光栅的光半导体器件及其制造方法

    公开(公告)号：US20110027926A1

    公开(公告)日：2011-02-03

    申请号：US12923767

    申请日：2010-10-07

    申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Yasuhiko Arakawa

    发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Yasuhiko Arakawa

    IPC分类号： H01L31/18

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/02284 ,  H01S5/028 ,  H01S5/0655 ,  H01S5/1203 ,  H01S5/1237 ,  H01S5/3412 ,  H01S2301/18

    摘要： An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.

    摘要翻译： 有源层（18）形成在具有相互面对相反方向的一对小面（15A，15B）的半导体衬底之上。 在有源层上形成上折叠层（19），其折射率低于活性层的折射率。 衍射光栅（25）设置在波导区域（22）中的分布反馈区域的两侧的上部包层中，波导区域从半导体衬底的一个面延伸到另一个面。 端部区域（22B）被限定在波导区域的两端，并且分布式反馈区域（22A）设置在端部区域之间。 低折射率区域（26）设置在波导区域的每个端部区域的两侧的上部包层中，低折射率区域的折射率低于上部包层的折射率。