公开(公告)号：US08031394B2

公开(公告)日：2011-10-04

申请号：US12222696

申请日：2008-08-14

Applicant: Koji Otsubo ,  Haruhiko Kuwatsuka

Inventor： Koji Otsubo ,  Haruhiko Kuwatsuka

IPC: G02F1/365 ,  G02F2/02 ,  H04B10/17 ,  H04B10/12

CPC classification number: G02F1/3534 ,  G02F2001/212 ,  G02F2002/006 ,  H04B10/299

Abstract: A wavelength conversion system includes a Mach-Zehnder interferometer including two optical waveguides, a non-linear medium provided on one of the two optical waveguides, and a branching ratio adjuster for adjusting the branching ratio of multiplexed light produced by multiplexing signal light and pumping light so that the powers of the signal light and the pumping light which are to be emitted from the two optical waveguides are equal to each other. The multiplexed light whose branching ratio is adjusted by the branching ratio adjuster is introduced into the two optical waveguides such that the non-linear medium generates phase conjugation light of the signal light and the light guided through the one optical waveguide and the light guided through the other one of the two optical waveguides interfere with each other so that the phase conjugation light is extracted as wavelength conversion light.

Abstract translation: 一种波长转换系统包括：包括两个光波导的马赫 - 曾德干涉仪，设置在两个光波导中的一个上的非线性介质;以及分支比调节器，用于调节由多路复用信号光和泵浦光产生的复用光的分支比 使得要从两个光波导发射的信号光和泵浦光的功率彼此相等。 通过分支比调节器调整分支比的多路复用光被引入到两个光波导中，使得非线性介质产生信号光的相位共轭光和通过一个光波导引导的光和通过 两个光波导中的另一个彼此干涉，使得相位共轭光作为波长转换光被提取。

公开(公告)号：US20100052616A1

公开(公告)日：2010-03-04

申请号：US12615095

申请日：2009-11-09

Applicant: Masahiro Takada ,  Yoshiyuki Nakamura ,  Koji Otsubo ,  Kazuo Tojima

Inventor： Masahiro Takada ,  Yoshiyuki Nakamura ,  Koji Otsubo ,  Kazuo Tojima

IPC: H02J7/00

CPC classification number: H01M10/4207 ,  H01M10/345 ,  H01M10/425 ,  H01M10/446

Abstract: In a pre-replacement process, a replacement battery module is provided with a memory effect before being dispatched, by performing at least one of the process of performing a cyclic charge/discharge operation on the replacement battery module while limiting the width of SOC change to an intermediate range, and the process of setting an initial SOC and then letting the replacement battery module stand for a predetermined time in an environment of temperature above normal temperature. This pre-replacement process substantially eliminates the difference between the voltage characteristic of the replacement battery module yet to be used and the voltage characteristic of a battery module having a history of use, thereby achieving a uniform voltage characteristic of a battery pack as a whole.

Abstract translation: 在预更换处理中，通过对更换电池模块执行循环充电/放电操作的过程中的至少一个，同时将SOC变化的宽度限制为 中间范围，以及设定初始SOC的处理，然后在更高于常温的环境中放置更换电池模块预定时间。 这种预置换过程基本上消除了待使用的替换电池模块的电压特性与具有使用历史的电池模块的电压特性之间的差异，从而实现了电池组整体的均匀的电压特性。

公开(公告)号：US20090080064A1

公开(公告)日：2009-03-26

申请号：US12222696

申请日：2008-08-14

Applicant: Koji Otsubo ,  Haruhiko Kuwatsuka

Inventor： Koji Otsubo ,  Haruhiko Kuwatsuka

IPC: G02F1/225 ,  G02F1/365

CPC classification number: G02F1/3534 ,  G02F2001/212 ,  G02F2002/006 ,  H04B10/299

Abstract: A wavelength conversion system includes a Mach-Zehnder interferometer including two optical waveguides, a non-linear medium provided on one of the two optical waveguides, and a branching ratio adjuster for adjusting the branching ratio of multiplexed light produced by multiplexing signal light and pumping light so that the powers of the signal light and the pumping light which are to be emitted from the two optical waveguides are equal to each other. The multiplexed light whose branching ratio is adjusted by the branching ratio adjuster is introduced into the two optical waveguides such that the non-linear medium generates phase conjugation light of the signal light and the light guided through the one optical waveguide and the light guided through the other one of the two optical waveguides interfere with each other so that the phase conjugation light is extracted as wavelength conversion light.

Abstract translation: 一种波长转换系统包括：包括两个光波导的马赫 - 曾德干涉仪，设置在两个光波导中的一个上的非线性介质;以及分支比调节器，用于调节由多路复用信号光和泵浦光产生的复用光的分支比 使得要从两个光波导发射的信号光和泵浦光的功率彼此相等。 通过分支比调节器调整分支比的多路复用光被引入到两个光波导中，使得非线性介质产生信号光的相位共轭光和通过一个光波导引导的光和通过 两个光波导中的另一个彼此干涉，使得相位共轭光作为波长转换光被提取。

公开(公告)号：US20060222028A1

公开(公告)日：2006-10-05

申请号：US11341588

申请日：2006-01-30

Applicant: Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Koji Otsubo ,  Yasuhiko Arakawa

Inventor： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Koji Otsubo ,  Yasuhiko Arakawa

IPC: H01S5/00

CPC classification number: H01S5/341 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/0206 ,  H01S5/0422 ,  H01S5/06226 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3412 ,  H01S5/34306

Abstract: An intrinsic GaAs waveguide layer is formed on a p-type AlGaAs cladding layer, a quantum dot active layer is formed further thereon. An n-type AlGaAs cladding layer is formed on the center portion of the quantum dot active layer. Thus-configured semiconductor laser is allowed to successfully suppress the area of the p-n junction plane to a small level, and to obtain a high level of reliability, because there is no need of processing the center portion of the quantum dot active layer, contributive to laser oscillation.

公开(公告)号：US07099363B2

公开(公告)日：2006-08-29

申请号：US10309270

申请日：2002-12-04

Applicant: Koji Otsubo

Inventor： Koji Otsubo

IPC: H01S5/00

CPC classification number: H01S5/18311 ,  B82Y20/00 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/34306

Abstract: A surface-emitting laser has a lower multilayer film reflecting mirror, an active layer, a current confinement layer, a clad layer, an upper multilayer film reflecting mirror, and an upper electrode formed in the order described on the upper surface of a substrate having a lower electrode formed on the lower surface thereof. The current confinement layer includes a conductive part and an insulating part surrounding the conductive part with the conductive part being defined by a sidewall surface that widens along a direction toward the active layer.

公开(公告)号：US5404370A

公开(公告)日：1995-04-04

申请号：US235792

申请日：1994-04-29

Applicant: Koji Otsubo ,  Hajime Shoji

Inventor： Koji Otsubo ,  Hajime Shoji

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01L33/46 ,  H01S5/00 ,  H01S5/183 ,  H01S3/19

CPC classification number: H01S5/18333 ,  H01S5/18305 ,  H01S5/2072 ,  H01S5/2222

Abstract: A planar laser diode includes a substrate, a first multilayer structure on the substrate and formed of an alternate stacking of a first epitaxial layer and a second epitaxial layer, a cavity structure provided on the first multilayer structure and including an undoped active layer for producing optical radiation as a result of stimulated emission, a second multilayer structure provided on the cavity structure and formed of an alternate stacking of a third epitaxial layer and a fourth epitaxial layer, a first electrode structure on a bottom surface of the substrate, a second electrode structure for injecting carriers to said active layer via said cavity structure, an optical passage provided in one of the first and second electrode structures for allowing an optical beam to pass therethrough; a a current path structure provided between the second electrode structure and the active layer for providing a passage of the carriers, a current confinement structure for confining the passage of the carriers such that said carriers flow along a path generally coincident to an optical path of the optical beam, and a conductive region provided in contact with said the electrode structure for causing the carriers to flow therethrough, wherein the conductive region is provided so as to avoid the optical path.

Abstract translation: 平面激光二极管包括衬底，衬底上的第一多层结构，并由第一外延层和第二外延层的交替叠层形成;腔结构，设置在第一多层结构上，并包括用于产生光学的未掺杂的有源层 作为受激发射的结果的辐射，设置在空腔结构上并由第三外延层和第四外延层的交替层叠形成的第二多层结构，在基底的底表面上的第一电极结构，第二电极结构 用于经由所述空腔结构将载流子注入所述有源层;光通道，设置在所述第一和第二电极结构之一中，用于允许光束通过; 设置在第二电极结构和有源层之间以提供载流子通道的电流路径结构，用于限制载流子通道的电流限制结构，使得所述载流子沿着通常与光学器件的光路重合的路径流动 以及设置成与所述电极结构接触以使载流子流过其中的导电区域，其中提供导电区域以避免光路。

公开(公告)号：US08130443B2

公开(公告)日：2012-03-06

申请号：US12033398

申请日：2008-02-19

Applicant: Koji Otsubo

Inventor： Koji Otsubo

IPC: H01S3/00

CPC classification number: H01S5/50 ,  B82Y20/00 ,  G02F1/01708 ,  H01S5/0057 ,  H01S5/0265 ,  H01S5/1085 ,  H01S5/227 ,  H01S5/3412 ,  H01S5/34306

Abstract: An optical waveform reshaping device, including a semiconductor optical waveguide which has an active layer, wherein: optical amplification regions and optical absorption regions are installed alternately along the semiconductor optical waveguide; one optical amplification region is set longer than the other optical amplification regions so that a desired amplification factor can be obtained when power of an input optical signal is at an ON level; a power level is maintained by the other optical amplification regions excluding the one optical amplification region and by the optical absorption regions when the power of the input optical signal is at the ON level; and when the power of the input optical signal is at an OFF level, the input optical signal is absorbed by the optical absorption regions so that a power level of an output optical signal will not be higher than the power level of the input optical signal.

Abstract translation: 一种光波形整形装置，包括具有有源层的半导体光波导，其中：光放大区域和光吸收区域沿半导体光波导交替安装; 一个光放大区域被设置为比其他光放大区域长，使得当输入光信号的功率处于ON电平时可以获得期望的放大系数; 当输入光信号的功率处于ON电平时，除了一个光放大区域之外的其它光放大区域和由光吸收区域保持功率电平; 并且当输入光信号的功率处于OFF电平时，输入光信号被光吸收区吸收，使得输出光信号的功率电平不会高于输入光信号的功率电平。

公开(公告)号：US07522647B2

公开(公告)日：2009-04-21

申请号：US11341588

申请日：2006-01-30

Applicant: Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Koji Otsubo ,  Yasuhiko Arakawa

Inventor： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Koji Otsubo ,  Yasuhiko Arakawa

IPC: H01S5/00

CPC classification number: H01S5/341 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/0206 ,  H01S5/0422 ,  H01S5/06226 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3412 ,  H01S5/34306

Abstract: An intrinsic GaAs waveguide layer is formed on a p-type AlGaAs cladding layer, a quantum dot active layer is formed further thereon. An n-type AlGaAs cladding layer is formed on the center portion of the quantum dot active layer. Thus-configured semiconductor laser is allowed to successfully suppress the area of the p-n junction plane to a small level, and to obtain a high level of reliability, because there is no need of processing the center portion of the quantum dot active layer, contributive to laser oscillation.

Abstract translation: 在p型AlGaAs包层上形成本征GaAs波导层，在其上进一步形成量子点有源层。 在量子点有源层的中心部分上形成n型AlGaAs覆层。 这样配置的半导体激光器能够成功地将pn结面的面积抑制到较小的水平，并且为了获得高可靠性，因为不需要处理量子点有源层的中心部分，有助于 激光振荡。

公开(公告)号：US20050045868A1

公开(公告)日：2005-03-03

申请号：US10857920

申请日：2004-06-02

Applicant: Koji Otsubo ,  Yoshiaki Nakata

Inventor： Koji Otsubo ,  Yoshiaki Nakata

IPC: H01L21/205 ,  H01L29/06 ,  H01L33/06 ,  H01L33/30 ,  H01L33/40 ,  H01S5/028 ,  H01S5/062 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3412 ,  H01S5/34313 ,  H01S5/34366

Abstract: The optical semiconductor device comprises an active layer including a plurality of quantum dot stacks 18, 22, 26 each of which is formed of a plurality of quantum dot layers 14 and a plurality of first layers 16 alternately stacked, and a plurality of second barrier layers 20, 24 thicker than the first barrier layers 16 stacked alternately with the quantum dot stacks 18, 22, 26. Thus, the quantum dot layers can be stacked with the generation of dislocations due to lattice mismatching between the substrate and the quantum dots suppressed. A number of quantum dot layers can be stacked with a desired light confinement coefficient ensured. The optical semiconductor device can have the characteristics easily improved.

Abstract translation: 光学半导体器件包括有源层，其包括多个量子点堆叠18,22,26，每个量子点堆叠18,22,26由交替层叠的多个量子点层14和多个第一层16形成，并且多个第二阻挡层 20,24比与量子点堆叠18,22,26交替堆叠的第一阻挡层16厚。因此，量子点层可以由于衬底和量子点被抑制之间的晶格失配而产生位错而堆叠。 可以堆叠多个量子点层，确保所需的光限制系数。 光学半导体器件可以具有容易改善的特性。

公开(公告)号：US06728287B2

公开(公告)日：2004-04-27

申请号：US09978570

申请日：2001-10-18

Applicant: Koji Otsubo

Inventor： Koji Otsubo

IPC: H01S5183

CPC classification number: H01S5/18341 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18372 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3201 ,  H01S5/34306 ,  H01S2301/173

Abstract: A lower multi-layer mirror is disposed on a substrate made of a first semiconductor having a first lattice constant. The lower multi-layer mirror has a lamination structure that a first layer made of an oxide of a second semiconductor and a second layer made of a third semiconductor are alternately stacked. A strain-relaxation layer is disposed on the lower multi-layer mirror, the strain-relaxation layer being made of a fourth semiconductor having a second lattice constant different from the first lattice constant. An active layer is disposed on the strain-relaxation layer. The active layer including a luminescence region is made of a fifth semiconductor having a third lattice constant different from the first and second lattice constants. An upper multi-layer mirror is disposed on the active layer. A surface-emitting semiconductor laser is provided which has a high efficiency and a low heat resistance.

Abstract translation: 下部多层反射镜设置在由具有第一晶格常数的第一半导体制成的基板上。 下层多层反射镜具有由第二半导体的氧化物构成的第一层和由第三半导体构成的第二层交替层叠的层叠结构。 应变弛豫层设置在下多层反射镜上，应变松弛层由具有不同于第一晶格常数的第二晶格常数的第四半导体制成。 活性层设置在应变松弛层上。 包括发光区域的有源层由具有不同于第一和第二晶格常数的第三晶格常数的第五半导体制成。 上层多层反射镜设置在有源层上。 提供了具有高效率和低耐热性的表面发射半导体激光器。